Folgen
Nikos Arpatzanis
Nikos Arpatzanis
Zugehörigkeit unbekannt
Bestätigte E-Mail-Adresse bei auth.gr
Titel
Zitiert von
Zitiert von
Jahr
Effect of channel width on the electrical characteristics of amorphous/ nanocrystalline silicon bilayer thin-film transistors
G Hatzopoulos, A.T., Arpatzanis, N., Tassis, D.H., (...), Oudwan, M., Kamarinos
IEEE Transactions on Electron Devices 54 (5), 1265-1269, 2007
202007
Neutron radiation effects in high electron mobility transistors [AlGaAs/GaAs]
M Papastamatiou, N Arpatzanis, GJ Papaioannou, C Papastergiou, ...
IEEE Transactions on Electron Devices 44 (3), 364-372, 1997
201997
Study of the drain leakage current in bottom-gated nanocrystalline silicon thin-film transistors by conduction and low-frequency noise measurements
G Hatzopoulos, A.T., Arpatzanis, N., Tassis, D.H., (...), Templier, F ...
IEEE Transactions on Electron Devices 54 (5), 1076-1082, 2007
192007
A simple and continuous polycrystalline silicon thin-film transistor model for SPICE implementation
G Pappas, I., Hatzopoulos, A.T., Tassis, D.H., Arpatzanis N., Sisko S ...
Journal of Applied Physics 100 (6), 064506, 2006
192006
Electrical and noise characterization of bottom-gated nanocrystalline silicon thin-film transistors
G Hatzopoulos, A.T., Arpatzanis, N., Tassis, D.H., (...), Oudwan, M., Kamarinos
Journal of Applied Physics 100 (11), 114311, 2006
182006
Stability of amorphous-silicon and nanocrystalline silicon thin-film transistors under DC and AC stress
G Hatzopoulos, A.T., Arpatzanis, N., Tassis, D.H., (...), Oudwan, M., Kamarinos
IEEE Electron Device Letters 28 (9), 803-805, 2007
172007
Analytical current-voltage model for nanocrystalline silicon thin-film transistors
M Hatzopoulos, A.T., Pappas, I., Tassis, D.H., Arpatzanis N., Dimitriadis C ...
Applied Physics Letters 89 (19), 193504, 2006
152006
Degradation of n-channel a-Si:H/nc-Si:H bilayer thin-film transistors under DC electrical stress
G Arpatzanis, N., Hatzopoulos, A.T., Tassis, D.H., (...), Oudwan, M., Kamarinos
Microelectronics Reliability 48(4), pp. 531-536 48 (4), 531-536, 2008
12*2008
Determination of bulk and interface density of states in polycrystalline silicon thin film transistors
G Arpatzanis, N., Dimitriadis, C.A., Siskos, S., Hatzopoulos, A.A., Kamarinos
Thin Solid Films 515 (19), 7581-7584, 2007
102007
The gamma ray radiation effects in high-electron-mobility transistors
N Arpatzanis, M Papastamatiou, GJ Papaioannou, Z Hatzopoulos, ...
Semiconductor science and technology 10 (11), 1445, 1995
91995
1/f noise characterization of amorphous/nanocrystalline silicon bilayer thin-film transistors
G Hatzopoulos, A.T., Arpatzanis, N., Tassis, D.H., (...), Oudwan, M., Kamarinos
Solid-State Electronics 51 (5), 726-731, 2007
82007
Ion irradiation induced defects in epitaxial GaAs layers
N Arpatzanis, R Vlastou, G Konstantinidis, W Assmann, M Papastamatiou, ...
Solid-State Electronics 42 (2), 277-282, 1998
81998
Dynamic hot-carrier induced degradation in n-channel polysilicon thin-film transistors
G Tassis, D.H., Hatzopoulos, A.T., Arpatzanis, N., Dimitriadis, C.A., Kamarinos
Microelectronics Reliability 46 (12), 2032-2037, 2006
62006
Current-voltage and noise characteristics of reverse-biased Au/n-GaAs Schottky diodes with embedded InAs quantum dots
JI Arpatzanis, N., Tassis, D.H., Dimitriadis, C.A., (...), Choi, W.J., Lee
Semiconductor Science and Technology 22 ((10),002), 1086-1091, 2007
42007
Electrical and low frequency noise properties of H-SiC p +-n-n + junction diodes
M Arpatzanis, N., Tsormpatzoglou, A., Dimitriadis, C.A., (...), Camara, N ...
Physica Status Solidi (A) Applications and Materials Science 203 (10), 2551-2557, 2006
4*2006
Experimental investigation of noise in 4H-SiC p+-n-n+ junctions
N Arpatzanis, N., Tassis, D.H., Dimitriadis, C.A., Zekentes, K., Camara
Semiconductor Science and Technology 21 (5), 591-593, 2006
42006
Effects of hot carriers in offset gated polysilicon thin-film transistors
G Hatzopoulos, A.T., Tassis, D.H., Arpatzanis, N., Dimitriadis, C.A., Kamarinos
Microelectronics Reliability 46 (2-4), 311-316, 2006
42006
Stability of n -channel a-Si:Hnc-Si:H bilayer thin-film transistors under dynamic stress
G Hatzopoulos, A.T., Tassis, D.H., Arpatzanis, N., (...), Oudwan, M., Kamarinos
Journal of Applied Physics 103(8),084514 103 (8), 084514, 2008
3*2008
Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structures
C Arpatzanis, N., Tsormpatzoglou, A., Dimitriadis, C.A., (...), Lee, J.I ...
Journal of Applied Physics 102 (5), 054302, 2007
32007
On the α‐Particle Irradiation Effects in MESFETs
M Papastamatiou, N Arpatzanis, GJ Papaioannou, G Constantinides, ...
physica status solidi (a) 180 (2), 569-584, 2000
32000
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20