| Defect-induced loading of Pt nanoparticles on carbon nanotubes SJ Kim, YJ Park, EJ Ra, KK Kim, KH An, YH Lee, JY Choi, CH Park, ... Applied physics letters 90 (2), 2007 | 121 | 2007 |
| Restorable type conversion of carbon nanotube transistor using pyrolytically controlled antioxidizing photosynthesis coenzyme BR Kang, WJ Yu, KK Kim, HK Park, SM Kim, Y Park, G Kim, HJ Shin, ... Advanced Functional Materials 19 (16), 2553-2559, 2009 | 61 | 2009 |
| Selective oxidation on metallic carbon nanotubes by halogen oxoanions SM Yoon, SJ Kim, HJ Shin, A Benayad, SJ Choi, KK Kim, SM Kim, YJ Park, ... Journal of the American Chemical Society 130 (8), 2610-2616, 2008 | 51 | 2008 |
| Adsorption and dissociation of hydrogen molecules on a Pt atom on defective carbon nanotubes Y Park, G Kim, YH Lee Applied Physics Letters 92 (8), 2008 | 23 | 2008 |
| Structure and magnetism of small Gd and Fe nanoclusters:< span>< img height= G Kim, Y Park, MJ Han, J Yu, C Heo, YH Lee Solid State Communications 149 (45), 2058-2060, 2009 | 15* | 2009 |
| Adsorption of Pt on defective carbon nanotube walls: a DFT approach Y Park, RJWE Lahaye, YH Lee Computer physics communications 177 (1-2), 46-46, 2007 | 14 | 2007 |
| First-principles studies of the electronic and dielectric properties of Si/SiO2/HfO2 interfaces Y Park, K Kong, H Chang, M Shin Japanese Journal of Applied Physics 52 (4R), 041803, 2013 | 12 | 2013 |
| Interface model for HfO2 gate stack from first principles calculations and its application to nanoscale device simulations M Shin, Y Park, K Kong, H Chang Applied Physics Letters 98 (17), 2011 | 10 | 2011 |
| Gate leakage current in double-gate MOSFETs with Si/SiO2 interface model from first principle calculations Y Park, K Kong, H Chang, M Shin 10th IEEE International Conference on Nanotechnology, 1109-1112, 2010 | 1 | 2010 |
| Device characteristics of double-gate MOSFETs with Si-dielectric interface model from first principle calculations Y Park, K Kong, H Chang, M Shin 2010 Silicon Nanoelectronics Workshop, 1-2, 2010 | | 2010 |
