Yuchen Du
Yuchen Du
GlobalFoundires
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Titel
Zitiert von
Zitiert von
Jahr
Semiconducting black phosphorus: synthesis, transport properties and electronic applications
H Liu, Y Du, Y Deng, DY Peide
Chemical Society Reviews 44 (9), 2732-2743, 2015
9082015
Chloride molecular doping technique on 2D materials: WS2 and MoS2
L Yang, K Majumdar, H Liu, Y Du, H Wu, M Hatzistergos, PY Hung, ...
Nano Letters 14 (11), 6275-6280, 2014
4622014
Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus
Z Luo, J Maassen, Y Deng, Y Du, RP Garrelts, MS Lundstrom, PD Ye, ...
Nature Communications 6, 8572, 2015
4152015
Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar and scaling
Y Du, H Liu, Y Deng, PD Ye
ACS Nano 8 (10), 10035-10042, 2014
3622014
Field-effect transistors made from solution-grown two-dimensional tellurene
Y Wang, G Qiu, R Wang, S Huang, Q Wang, Y Liu, Y Du, WA Goddard, ...
Nature Electronics 1 (4), 228-236, 2018
2192018
Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers
H Liu, M Si, Y Deng, AT Neal, Y Du, S Najmaei, PM Ajayan, J Lou, PD Ye
ACS Nano 8 (1), 1031-1038, 2013
2182013
Molecular Doping of Multilayer MoS₂ Field-Effect Transistors: Reduction in Sheet and Contact Resistances
Y Du, H Liu, AT Neal, M Si, PD Ye
IEEE Electron Device Letters 34 (10), 1328 - 1330, 2013
2152013
Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films
H Liu, M Si, S Najmaei, AT Neal, Y Du, PM Ajayan, J Lou, PD Ye
Nano Letters 13 (6), 2640-2646, 2013
194*2013
The effect of dielectric capping on few-layer phosphorene transistors: Tuning the Schottky barrier heights
H Liu, AT Neal, M Si, Y Du, DY Peide
IEEE Electron Device Letters 35 (7), 795-797, 2014
1532014
One-dimensional van der Waals material tellurium: Raman spectroscopy under strain and magneto-transport
Y Du, G Qiu, Y Wang, M Si, X Xu, W Wu, PD Ye
Nano Letters 17 (6), 3965-3973, 2017
1352017
MoS₂ Field-Effect Transistors With Graphene/Metal Heterocontacts
Y Du, L Yang, J Zhang, H Liu, K Majumdar, PD Kirsch, PD Ye
IEEE Electron Device Letters 35 (5), 599-601, 2014
1252014
Auxetic Black Phosphorus: A 2D Material with Negative Poisson's Ratio
Y Du, J Maassen, W Wu, Z Luo, X Xu, PD Ye
Nano Letters 16 (10), 6701-6708, 2016
1152016
Surface chemistry of black phosphorus under a controlled oxidative environment
W Luo, DY Zemlyanov, CA Milligan, Y Du, L Yang, Y Wu, DY Peide
Nanotechnology 27 (43), 434002, 2016
862016
Temporal and Thermal Stability of Al2O3-Passivated Phosphorene MOSFETs
X Luo, Y Rahbarihagh, JCM Hwang, H Liu, Y Du, DY Peide
IEEE Electron Device Letters 35 (12), 1314-1316, 2014
732014
High-performance MoS2field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm)
L Yang, K Majumdar, Y Du, H Liu, H Wu, M Hatzistergos, PY Hung, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
562014
Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping
Y Du, L Yang, H Zhou, P Ye
IEEE Electron Device Letters 37 (4), 429 - 432, 2016
512016
Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors
Y Du, L Yang, H Liu, PD Ye
APL Materials 2 (9), 1031, 2014
502014
Steep-Slope WSe2 Negative Capacitance Field-Effect Transistor
M Si, C Jiang, W Chung, Y Du, MA Alam, PD Ye
Nano letters 18 (6), 3682-3687, 2018
482018
Observation of Optical and Electrical In-Plane Anisotropy in High-Mobility Few-Layer ZrTe5
G Qiu, Y Du, A Charnas, H Zhou, S Jin, Z Luo, D Zemlyanov, X Xu, ...
Nano Letters 16 (12), 7364-7369, 2016
442016
Two-dimensional TaSe2 metallic crystals: Spin-orbit scattering length and breakdown current density
AT Neal, Y Du, H Liu, PD Ye
ACS Nano 8 (9), 9137-9142, 2014
372014
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