| Sulfur vacancies in monolayer MoS2 and its electrical contacts D Liu, Y Guo, L Fang, J Robertson Applied Physics Letters 103 (18), 2013 | 430 | 2013 |
| Chalcogen vacancies in monolayer transition metal dichalcogenides and Fermi level pinning at contacts Y Guo, D Liu, J Robertson Applied Physics Letters 106 (17), 2015 | 188 | 2015 |
| Solvatochromic effect on the photoluminescence of MoS₂ monolayers. N Mao, Y Chen, D Liu, J Zhang, L Xie Small (Weinheim an der Bergstrasse, Germany) 9 (8), 1312-1315, 2013 | 166 | 2013 |
| 3D behavior of Schottky barriers of 2D transition-metal dichalcogenides Y Guo, D Liu, J Robertson ACS applied materials & interfaces 7 (46), 25709-25715, 2015 | 160 | 2015 |
| Superlubricity of a graphene/MoS 2 heterostructure: a combined experimental and DFT study L Wang, X Zhou, T Ma, D Liu, L Gao, X Li, J Zhang, Y Hu, H Wang, Y Dai, ... Nanoscale 9 (30), 10846-10853, 2017 | 154 | 2017 |
| Oxygen vacancies in high-k oxides K Tse, D Liu, K Xiong, J Robertson Microelectronic Engineering 84 (9-10), 2028-2031, 2007 | 111 | 2007 |
| Au-Modified Monolayer MoS2 Sensor for DNA Detection K Jin, L Xie, Y Tian, D Liu The Journal of Physical Chemistry C 120 (20), 11204-11209, 2016 | 78 | 2016 |
| Magnetic proximity effect in graphene coupled to a nanoplate YF Wu, HD Song, L Zhang, X Yang, Z Ren, D Liu, HC Wu, J Wu, JG Li, ... Physical Review B 95 (19), 195426, 2017 | 74 | 2017 |
| Ultrasensitive SERS detection of rhodamine 6G and p-nitrophenol based on electrochemically roughened nano-Au film J Wang, C Qiu, X Mu, H Pang, X Chen, D Liu Talanta 210, 120631, 2020 | 72 | 2020 |
| Electrochemical functionalization of 316 stainless steel with polyaniline-graphene oxide: Corrosion resistance study C Qiu, D Liu, K Jin, L Fang, G Xie, J Robertson Materials Chemistry and Physics 198, 90-98, 2017 | 69 | 2017 |
| Lateral graphene p–n junctions formed by the graphene/MoS 2 hybrid interface J Meng, HD Song, CZ Li, Y Jin, L Tang, D Liu, ZM Liao, F Xiu, DP Yu Nanoscale 7 (27), 11611-11619, 2015 | 63 | 2015 |
| Passivation of oxygen vacancy states and suppression of Fermi pinning in HfO2 by La addition D Liu, J Robertson Applied Physics Letters 94 (4), 2009 | 63 | 2009 |
| Direct Visualization of Exciton Transport in Defective Few‐Layer WS2 by Ultrafast Microscopy H Liu, C Wang, Z Zuo, D Liu, J Luo Advanced Materials 32 (2), 1906540, 2020 | 59 | 2020 |
| Thickness dependent friction on few-layer MoS2, WS2, and WSe2 L Fang, DM Liu, Y Guo, ZM Liao, JB Luo, SZ Wen Nanotechnology 28 (24), 245703, 2017 | 59 | 2017 |
| Oxygen vacancy levels and interfaces of Al2O3 D Liu, J Robertson Microelectronic Engineering 86 (7-9), 1668-1671, 2009 | 46 | 2009 |
| Neutral and defect-induced exciton annihilation in defective monolayer WS 2 H Liu, C Wang, D Liu, J Luo Nanoscale 11 (16), 7913-7920, 2019 | 44 | 2019 |
| First-principles calculations of the electronic structure and defects of Al2O3 D Liu, Y Guo, L Lin, J Robertson Journal of Applied Physics 114 (8), 2013 | 43 | 2013 |
| Raman spectroscopy as a potential diagnostic tool to analyse biochemical alterations in lung cancer Q Zheng, J Li, L Yang, B Zheng, J Wang, N Lv, J Luo, FL Martin, D Liu, ... Analyst 145 (2), 385-392, 2020 | 42 | 2020 |
| p-type Fermi level pinning at a Si: Al2O3 model interface LRC Fonseca, D Liu, J Robertson Applied Physics Letters 93 (12), 2008 | 40 | 2008 |
| Step-by-step fracture of two-layer stacked graphene membranes QY Lin, YH Zeng, D Liu, GY Jing, ZM Liao, D Yu ACS nano 8 (10), 10246-10251, 2014 | 39 | 2014 |
John RobertsonProfessor of Electronics, University of CambridgeVerified email at eng.cam.ac.uk
