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Haojun Zhang
Haojun Zhang
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Jahr
Stacked semiconductor die assemblies with multiple thermal paths and associated systems and methods
SK Groothuis, J Li, H Zhang, PA Silvestri, X Li, S Luo, LG England, ...
US Patent 9,153,520, 2015
1072015
A predictive model for IC self-heating based on effective medium and image charge theories and its implications for interconnect and transistor reliability
W Ahn, H Zhang, T Shen, C Christiansen, P Justison, S Shin, MA Alam
IEEE Transactions on Electron Devices 64 (9), 3555-3562, 2017
282017
Temperature dependency of coefficient of hygroscopic swelling of molding compound
S Park, H Zhang, X Zhang, SL Ng, HC Lee
2009 59th Electronic Components and Technology Conference, 172-179, 2009
272009
A flexible approach to finding representative pattern sets
G Liu, H Zhang, L Wong
IEEE Transactions on Knowledge and Data Engineering 26 (7), 1562-1574, 2013
252013
Effect of metal line width on electromigration of BEOL Cu interconnects
S Choi, C Christiansen, L Cao, J Zhang, R Filippi, T Shen, KB Yeap, ...
2018 IEEE International Reliability Physics Symposium (IRPS), 4F. 4-1-4F. 4-6, 2018
232018
New analytical equations for skin and proximity effects in interconnects operated at high frequency
H Zhang, JH Lee, NM Iyer, L Cao
2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM), 39-41, 2017
162017
Influence of stress induced CT local layout effect (LLE) on 14nm FinFET
P Zhao, SM Pandey, E Banghart, X He, R Asra, V Mahajan, H Zhang, ...
2017 Symposium on VLSI Technology, T228-T229, 2017
142017
Stacked semiconductor die assemblies with multiple thermal paths and associated systems and methods
SK Groothuis, J Li, H Zhang, PA Silvestri, X Li, S Luo, LG England, ...
US Patent 10,170,389, 2019
112019
Hygroscopic swelling behavior of molding compound at high temperature
H Zhang, S Park, S Hong
2010 12th IEEE Intersociety Conference on Thermal and Thermomechanical …, 2010
112010
Supporting exploratory hypothesis testing and analysis
G Liu, H Zhang, M Feng, L Wong, SK Ng
ACM Transactions on Knowledge Discovery from Data (TKDD) 9 (4), 1-24, 2015
102015
Understanding and improving reliability for wafer level chip scale package: A study based on 45nm RFSOI technology for 5G applications
ZJ Wu, H Zhang, J Malinowski
IEEE Journal of the Electron Devices Society 8, 1305-1314, 2020
92020
Die edge crack propagation modeling for risk assessment of advanced technology nodes
T Xu, ZJ Wu, H Zhang, C Graas, P Justison
2018 IEEE 68th Electronic Components and Technology Conference (ECTC), 2260-2266, 2018
82018
Influence of skin effect on the current distribution of grounded-gate NMOS device
JH Lee, NM Iyer, H Zhang
IEEE Electron Device Letters 38 (11), 1583-1585, 2017
82017
Impact of 3D Via Middle TSV process on 20nm Wafer level FEOL and BEOL reliability
CS Premachandran, L England, S Kannan, R Ranjan, KB Yeap, W Teo, ...
2016 IEEE 66th Electronic Components and Technology Conference (ECTC), 1593-1598, 2016
82016
Optimization of TSV interconnects and BEOL layers under annealing process through fracture evaluation
F Qin, M Zhang, Y Dai, P Chen, T An, H He, H Zhang, J Zheng
Fatigue & Fracture of Engineering Materials & Structures 43 (7), 1433-1445, 2020
62020
45RFSOI WLCSP board level package risk assessment and solder joint reliability performance improvement
H Zhang, ZJ Wu, J Malinowski, M Carino, K Young-Fisher, J Trewhella, ...
2020 IEEE 70th Electronic Components and Technology Conference (ECTC), 2151-2156, 2020
62020
Physics of SOA degradation phenomena in power transistors under ESD conditions
JH Lee, NM Iyer, H Zhang, M Prabhu, PC Li, G Zhang, TC Tsai
2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 1-9, 2016
62016
Investigation of hygroscopic swelling behavior of molding compound and its impact on encapsulated MEMS packages
H Zhang
State University of New York at Binghamton, 2011
42011
Investigation of hygroscopic swelling of polymers in freezing temperature
S Park, H Zhang
ASME International Mechanical Engineering Congress and Exposition 42991, 281-285, 2007
42007
A Closed-Form Transient Joule Heating Model for an Interconnect in an Integrated Circuit
W Ahn, H Zhang, T Shen, P Justison, MA Alam
IEEE Electron Device Letters 41 (2), 288-291, 2019
22019
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