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Joon Pyo Kim
Joon Pyo Kim
Verified email at kaist.ac.kr - Homepage
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Year
Dielectric-Engineered High-Speed, Low-Power, Highly Reliable Charge Trap Flash-Based Synaptic Device for Neuromorphic Computing beyond Inference
JP Kim, SK Kim, S Park, S Kuk, T Kim, BH Kim, SH Ahn, YH Cho, ...
Nano Letters 23 (2), 451-461, 2023
102023
Oxygen scavenging of HfZrO 2-based capacitors for improving ferroelectric properties
BH Kim, S Kuk, SK Kim, JP Kim, DM Geum, SH Baek, SH Kim
Nanoscale Advances 4 (19), 4114-4121, 2022
82022
TiOx/Ti/TiOx Tri-Layer Film-Based Waveguide Bolometric Detector for On-Chip Si Photonic Sensor
J Shim, J Lim, DM Geum, JB You, H Yoon, JP Kim, WJ Baek, JH Han, ...
IEEE Transactions on Electron Devices 69 (4), 2151-2158, 2021
72021
Heterogeneous 3D Sequential CFET with Ge (110) Nanosheet p-FET on Si (100) bulk n-FET by Direct Wafer Bonding
SK Kim, HR Lim, J Jeong, SW Lee, JP Kim, J Jeong, BH Kim, SY Ahn, ...
2022 International Electron Devices Meeting (IEDM), 20.1. 1-20.1. 4, 2022
32022
IL Scavenging and Recovery Strategies to Improve the Performance and Reliability of HZO-Based FeFETs
BH Kim, SK Kim, S Kuk, YJ Suh, J Jeong, JP Kim, DM Geum, S Kim
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
22023
Strategy for 3D Ferroelectric Transistor: Critical Surface Orientation Dependence of HfZrOx on Si
SH Kuk, JH Han, BH Kim, JP Kim, SH Kim
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
22023
Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement
BH Kim, SH Kuk, SK Kim, JP Kim, YJ Suh, J Jeong, DM Geum, SH Baek, ...
Advanced Electronic Materials 9 (5), 2201257, 2023
22023
Effect of Scandium Insertion Into the Gate-Stack of Ferroelectric Field-Effect Transistors
BH Kim, SH Kuk, SK Kim, JP Kim, YJ Suh, J Jeong, DM Geum, SH Baek, ...
IEEE Transactions on Electron Devices 70 (4), 1996-2000, 2023
22023
3D Stackable Cryogenic InGaAs HEMT-Based DC and RF Multiplexer/Demultiplexer for Large-Scale Quantum Computing
J Jeong, SK Kim, J Kim, J Lee, JP Kim, BH Kim, YJ Suh, DM Geum, ...
2022 International Electron Devices Meeting (IEDM), 4.5. 1-4.5. 4, 2022
22022
TiOx/Ti/TiOx Film-based Waveguide Bolometric Detector for On-Chip Si Photonic Sensors
J Shim, J Lim, DM Geum, JB You, H Yoon, JP Kim, WJ Baek, JH Han, ...
2021 IEEE International Electron Devices Meeting (IEDM), 9.1. 1-9.1. 4, 2021
22021
Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics
BH Kim, SH Kuk, SK Kim, JP Kim, YJ Suh, J Jeong, CJ Lee, DM Geum, ...
Advanced Electronic Materials 10 (1), 2300327, 2024
12024
Cryogenic RF Transistors and Routing Circuits Based on 3D Stackable InGaAs HEMTs with Nb Superconductors for Large-Scale Quantum Signal Processing
J Jeong, SK Kim, YJ Suh, J Lee, J Choi, J Park, JP Kim, BH Kim, Y Jo, ...
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
12023
High-sensitivity waveguide-integrated bolometer based on free-carrier absorption for Si photonic sensors
J Shim, J Lim, DM Geum, JB You, H Yoon, JP Kim, WJ Baek, I Kim, ...
Optics Express 30 (23), 42663-42677, 2022
12022
Capacitor-Less 4F DRAM Using Vertical InGaAs Junction for Ultimate Cell Scalability
JP Kim, J Sim, P Bidenko, DM Geum, SK Kim, J Shim, J Kim, S Kim
IEEE Electron Device Letters 43 (11), 1834-1837, 2022
12022
Influence of Channel Structure on the Subthreshold Swing of InGaAs HEMTs at Cryogenic Temperatures Down to 4 K
J Jeong, J Kim, J Lee, YJ Suh, N Rheem, SK Kim, J Park, BH Kim, JP Kim, ...
IEEE Transactions on Electron Devices, 2024
2024
Large Polarization of Hf0.5Zr0.5Ox Ferroelectric Film on InGaAs with Electric-Field Cycling and Annealing Temperature Engineering
YJ Suh, J Jeong, BH Kim, SH Kuk, SK Kim, JP Kim, S Kim
IEEE Electron Device Letters, 2024
2024
BEOL-compatible 4F2 Single Crystalline Semiconductor Oscillator for Low-power and Large-scale Oscillatory Neural Network Hardware
JP Kim, HW Kim, J Jeong, J Park, SK Kim, J Kim, J Woo, S Kim
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
2023
Impact of the channel thickness fluctuation on the subthreshold swing of InGaAs HEMTs at cryogenic temperature down to4K for ultra-low power LNAs
J Jeong, J Kim, J Lee, YJ Suh, N Rheem, SK Kim, J Park, BH Kim, JP Kim, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
2023
Thermal Management in Multi-Finger GaN-on-Si HEMTs: Understanding and Mitigating Self-Heating and Thermal Crosstalk for Enhanced Device Reliability
J Jeong, SJ Choi, J Shim, E Kim, SK Kim, BH Kim, JP Kim, YJ Suh, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
2023
Role of Inter-Layer Dielectric on the Electrical and Heat Dissipation Characteristics in the Heterogeneous 3D Sequential CFETs with Ge p-FETs on Si n-FETs
SK Kim, HR Lim, J Shim, W Baek, S Kim, Y Park, J Jeong, J Lim, JP Kim, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
2023
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