Polymer electronic memories: Materials, devices and mechanisms QD Ling, DJ Liaw, C Zhu, DSH Chan, ET Kang, KG Neoh
Progress in polymer science 33 (10), 917-978, 2008
1072 2008 A novel ultrathin elevated channel low-temperature poly-Si TFT S Zhang, C Zhu, JKO Sin, PKT Mok
IEEE Electron Device Letters 20 (11), 569-571, 1999
672 1999 N-type Schottky barrier source/drain MOSFET using ytterbium silicide S Zhu, J Chen, MF Li, SJ Lee, J Singh, CX Zhu, A Du, CH Tung, A Chin, ...
IEEE Electron Device Letters 25 (8), 565-567, 2004
469 2004 Conjugated‐polymer‐functionalized graphene oxide: synthesis and nonvolatile rewritable memory effect XD Zhuang, Y Chen, G Liu, PP Li, CX Zhu, ET Kang, KG Noeh, B Zhang, ...
Advanced Materials 22 (15), 1731-1735, 2010
448 2010 A simple and efficient solar cell parameter extraction method from a single current-voltage curve C Zhang, J Zhang, Y Hao, Z Lin, C Zhu
Journal of applied physics 110 (6), 2011
340 2011 Synthesis and dynamic random access memory behavior of a functional polyimide QD Ling, FC Chang, Y Song, CX Zhu, DJ Liaw, DSH Chan, ET Kang, ...
Journal of the American Chemical Society 128 (27), 8732-8733, 2006
329 2006 Non-volatile polymer memory device based on a novel copolymer of N-vinylcarbazole and Eu-complexed vinylbenzoate Q Ling, Y Song, SJ Ding, C Zhu, DSH Chan, DL Kwong, ET Kang, ...
Advanced Materials 17 (4), 455-459, 2005
295 2005 Polymer memories: Bistable electrical switching and device performance QD Ling, DJ Liaw, EYH Teo, C Zhu, DSH Chan, ET Kang, KG Neoh
Polymer 48 (18), 5182-5201, 2007
267 2007 A dynamic random access memory based on a conjugated copolymer containing electron‐donor and‐acceptor moieties QD Ling, Y Song, SL Lim, EYH Teo, YP Tan, C Zhu, DSH Chan, ...
Angewandte Chemie International Edition 45 (18), 2947-2951, 2006
249 2006 Artificial synapses based on multiterminal memtransistors for neuromorphic application L Wang, W Liao, SL Wong, ZG Yu, S Li, YF Lim, X Feng, WC Tan, ...
Advanced Functional Materials 29 (25), 1901106, 2019
219 2019 Nonvolatile Polymer Memory Device Based on Bistable Electrical Switching in a Thin Film of Poly(N -vinylcarbazole) with Covalently Bonded C60 QD Ling, SL Lim, Y Song, CX Zhu, DSH Chan, ET Kang, KG Neoh
Langmuir 23 (1), 312-319, 2007
216 2007 Waveguide-integrated black phosphorus photodetector for mid-infrared applications L Huang, B Dong, X Guo, Y Chang, N Chen, X Huang, W Liao, C Zhu, ...
ACS nano 13 (1), 913-921, 2018
205 2018 Electrical Conductance Tuning and Bistable Switching in Poly(N -vinylcarbazole)−Carbon Nanotube Composite Films G Liu, QD Ling, EYH Teo, CX Zhu, DSH Chan, KG Neoh, ET Kang
ACS nano 3 (7), 1929-1937, 2009
197 2009 A high performance MIM capacitor using HfO2 dielectrics H Hu, C Zhu, YF Lu, MF Li, BJ Cho, WK Choi
IEEE Electron Device Letters 23 (9), 514-516, 2002
194 2002 Effect of surface anneal on the physical and electrical properties of films on Ge substrate N Wu, Q Zhang, C Zhu, CC Yeo, SJ Whang, DSH Chan, MF Li, BJ Cho, ...
Applied physics letters 84 (19), 3741-3743, 2004
182 2004 A high-density MIM capacitor (13 fF/μm2 ) using ALD HfO2 dielectrics X Yu, C Zhu, H Hu, A Chin, MF Li, BJ Cho, DL Kwong, PD Foo, MB Yu
IEEE Electron Device Letters 24 (2), 63-65, 2003
167 2003 Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric N Wu, Q Zhang, C Zhu, DSH Chan, MF Li, N Balasubramanian, A Chin, ...
Applied Physics Letters 85 (18), 4127-4129, 2004
163 2004 Bistable electrical switching and electronic memory effect in a solution-processable graphene oxide-donor polymer complex G Liu, X Zhuang, Y Chen, B Zhang, J Zhu, CX Zhu, KG Neoh, ET Kang
Applied Physics Letters 95 (25), 2009
147 2009 A TaN-HfO/sub 2/-Ge pMOSFET with NovelSiH/sub 4/surface passivation N Wu, Q Zhang, C Zhu, DSH Chan, A Du, N Balasubramanian, MF Li, ...
IEEE electron device letters 25 (9), 631-633, 2004
146 2004 Conformation-induced electrical bistability in non-conjugated polymers with pendant carbazole moieties SL Lim, Ling, EYH Teo, CX Zhu, DSH Chan, Kang, KG Neoh
Chemistry of Materials 19 (21), 5148-5157, 2007
144 2007