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Jean-Marc Routoure
Jean-Marc Routoure
professeur des universités caen
Verified email at unicaen.fr
Title
Cited by
Cited by
Year
Low-noise La0. 7Sr0. 3MnO3 thermometers for uncooled bolometric applications
F Yang, L Méchin, JM Routoure, B Guillet, RA Chakalov
Journal of applied physics 99 (2), 2006
892006
Experimental technique for reducing contact and background noise in voltage spectral density measurements
C Barone, A Galdi, S Pagano, O Quaranta, L Méchin, JM Routoure, ...
Review of Scientific Instruments 78 (9), 2007
582007
Low temperature noise spectroscopy of 0.1 μm partially depleted silicon on insulator metal-oxide-semiconductor field effect transistors
I Lartigau, JM Routoure, W Guo, B Cretu, R Carin, A Mercha, C Claeys, ...
Journal of applied physics 101 (10), 2007
562007
Uncooled bolometer response of a low noise La2∕ 3Sr1∕ 3MnO3 thin film
L Méchin, JM Routoure, B Guillet, F Yang, S Flament, D Robbes, ...
Applied Physics Letters 87 (20), 2005
542005
Low-Frequency Noise Assessment of Silicon Passivated Ge pMOSFETs With TiN/TaN/ Gate Stack
W Guo, G Nicholas, B Kaczer, RM Todi, B De Jaeger, C Claeys, A Mercha, ...
IEEE electron device letters 28 (4), 288-291, 2007
462007
1∕ f noise in patterned La2∕ 3Sr1∕ 3MnO3 thin films in the 300–400K range
L Méchin, JM Routoure, S Mercone, F Yang, S Flament, RA Chakalov
Journal of Applied Physics 103 (8), 2008
412008
Low frequency noise characterization in n-channel FinFETs
R Talmat, H Achour, B Cretu, JM Routoure, A Benfdila, R Carin, N Collaert, ...
Solid-state electronics 70, 20-26, 2012
392012
Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics
SD Dos Santos, B Cretu, V Strobel, JM Routoure, R Carin, JA Martino, ...
Solid-State Electronics 97, 14-22, 2014
362014
Epitaxial La0.7Sr0.3MnO3 thin films grown on SrTiO3 buffered silicon substrates by reactive molecular‐beam epitaxy
L Méchin, C Adamo, S Wu, B Guillet, S Lebargy, C Fur, JM Routoure, ...
physica status solidi (a) 209 (6), 1090-1095, 2012
362012
Apparent volume dependence of 1∕ f noise in thin film structures: Role of contacts
C Barone, S Pagano, L Méchin, JM Routoure, P Orgiani, L Maritato
Review of Scientific Instruments 79 (5), 2008
332008
La0. 7Sr0. 3MnO3 suspended microbridges for uncooled bolometers made using reactive ion etching of the silicon substrates
S Liu, B Guillet, A Aryan, C Adamo, C Fur, JM Routoure, F Lemarié, ...
Microelectronic engineering 111, 101-104, 2013
322013
DC and low frequency noise performances of SOI p-FinFETs at very low temperature
H Achour, R Talmat, B Cretu, JM Routoure, A Benfdila, R Carin, N Collaert, ...
Solid-state electronics 90, 160-165, 2013
312013
Impact of strain and source/drain engineering on the low frequency noise behaviour in n-channel tri-gate FinFETs
W Guo, B Cretu, JM Routoure, R Carin, E Simoen, A Mercha, N Collaert, ...
Solid-State Electronics 52 (12), 1889-1894, 2008
302008
A low-noise and quasi-ideal DC current source dedicated to four-probe low-frequency noise measurements
JM Routoure, S Wu, C Barone, L Méchin, B Guillet
IEEE Transactions on Instrumentation and Measurement 69 (1), 194-200, 2019
272019
Experimental evidence of correlation between 1/f noise level and metal-to-insulator transition temperature in epitaxial La0. 7Sr0. 3MnO3 thin films
L Méchin, S Wu, B Guillet, P Perna, C Fur, S Lebargy, C Adamo, ...
Journal of Physics D: Applied Physics 46 (20), 202001, 2013
272013
Haptic perception of document structure for visually impaired people on handled devices
F Maurel, G Dias, JM Routoure, M Vautier, P Beust, M Molina, C Sann
Procedia Computer Science 14, 319-329, 2012
262012
Enhanced electrical and magnetic properties in La0. 7Sr0. 3MnO3 thin films deposited on CaTiO3-buffered silicon substrates
C Adamo, L Méchin, T Heeg, M Katz, S Mercone, B Guillet, S Wu, ...
APL materials 3 (6), 2015
252015
Impact of Gate–Drain Spacing on Low-Frequency Noise Performance of In Situ SiN Passivated InAlGaN/GaN MIS-HEMTs
M Rzin, JM Routoure, B Guillet, L Méchin, M Morales, C Lacam, ...
IEEE Transactions on Electron Devices 64 (7), 2820-2825, 2017
222017
Towards single‐trap spectroscopy: Generation‐recombination noise in UTBOX SOI nMOSFETs
E Simoen, B Cretu, W Fang, M Aoulaiche, JM Routoure, R Carin, ...
physica status solidi (c) 12 (3), 292-298, 2015
222015
A low‐noise high output impedance DC current source
JM Routoure, D Fadil, S Flament, L Méchin
AIP Conference Proceedings 922 (1), 419-424, 2007
192007
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