Aleksander Maryński
Aleksander Maryński
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Zitiert von
Zitiert von
Monolayered MoSe2: a candidate for room temperature polaritonics
N Lundt, A Maryński, E Cherotchenko, A Pant, X Fan, S Tongay, G Sęk, ...
2D Materials 4 (1), 015006, 2016
Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy
A Maryński, G Sęk, A Musiał, J Andrzejewski, J Misiewicz, C Gilfert, ...
Journal of Applied Physics 114 (9), 094306, 2013
Phonon-assisted radiative recombination of excitons confined in strongly anisotropic nanostructures
A Musiał, A Maryński, P Mrowiński, J Andrzejewski, P Machnikowski, ...
Physical Review B 90 (12), 125424, 2014
Magnetic field control of the neutral and charged exciton fine structure in single quantum dashes emitting at 1.55 μm
P Mrowiński, A Musiał, A Maryński, M Syperek, J Misiewicz, A Somers, ...
Applied Physics Letters 106 (5), 053114, 2015
Triggered high-purity telecom-wavelength single-photon generation from p-shell-driven InGaAs/GaAs quantum dot
P Holewa, A Maryński, A Musiał, T Heuser, N Srocka, D Quandt, ...
Optics express 25 (25), 31122-31129, 2017
Exciton lifetime and emission polarization dispersion in strongly in-plane asymmetric nanostructures
M Gawełczyk, M Syperek, A Maryński, P Mrowiński, K Gawarecki, ...
Physical Review B 96 (24), 245425, 2017
Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emission
W Rudno-Rudziński, M Syperek, J Andrzejewski, A Maryński, J Misiewicz, ...
AIP Advances 7 (1), 015117, 2017
Control of Dynamic Properties of InAs/InAlGaAs/InP Hybrid Quantum Well‐Quantum Dot Structures Designed as Active Parts of 1.55 μm Emitting Lasers
W Rudno‐Rudziński, M Syperek, A Maryński, J Andrzejewski, J Misiewicz, ...
physica status solidi (a) 215 (4), 1700455, 2018
Temperature Dependence of Photoluminescence from Epitaxial InGaAs/GaAs Quantum Dots with High Lateral Aspect Ratio
A Musiał, G Sęk, A Marynski, P Podemski, J Misiewicz, A Löffler, S Höfling, ...
Acta Physica Polonica A 120 (5), 883-887, 2011
Single photon emission up to liquid nitrogen temperature from charged excitons confined in GaAs-based epitaxial nanostructures
Ł Dusanowski, M Syperek, A Maryński, LH Li, J Misiewicz, S Höfling, ...
Applied Physics Letters 106 (23), 233107, 2015
Optimizing the InGaAs/GaAs Quantum Dots for 1.3 µm Emission
A Maryński, P Mrowiński, K Ryczko, P Podemski, K Gawarecki, A Musiał, ...
Acta Physica Polonica A 132 (2), 386-389, 2017
Single dot photoluminescence excitation spectroscopy in the telecommunication spectral range
P Podemski, A Maryński, P Wyborski, A Bercha, W Trzeciakowski, G Sęk
Journal of Luminescence 212, 300-305, 2019
Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 μm
P Podemski, A Musiał, K Gawarecki, A Maryński, P Gontar, A Bercha, ...
Applied Physics Letters 116 (2), 023102, 2020
Oscillator strength of optical transitions in InGaAsN/GaAsN/GaAs quantum wells
A Mika, G Sek, K Ryczko, M Kozub, A Musial, A Marynski, J Misiewicz, ...
Optica Applicata 43 (1), 2013
Optical and Electronic Properties of Symmetric Quantum Dots Formed by Ripening in Molecular Beam Epitaxy: A Potential System for Broad …
P Holewa, M Gawełczyk, A Maryński, P Wyborski, JP Reithmaier, G Sęk, ...
Physical Review Applied 14 (6), 064054, 2020
The issue of 0D-like ground state isolation in GaAs-and InP-based coupled quantum dots-quantum well systems
M Syperek, J Andrzejewski, W Rudno-Rudziński, A Maryński, G Sȩk, ...
Journal of Physics: Conference Series 906 (1), 012019, 2017
Energy Transfer Processes in InAs/GaAs Quantum Dot Bilayer Structure
M Pieczarka, A Marynski, P Podemski, J Misiewicz, PD Spencer, R Murray, ...
Polish Academy of Sciences, 2016
Optical Properties of Site-Selectively Grown InAs/InP Quantum Dots with Predefined Positioning by Block Copolymer Lithography
P Holewa, J Jasiński, A Shikin, E Lebedkina, A Maryński, M Syperek, ...
Materials 14 (2), 391, 2021
Optical and electronic properties of symmetric InAs/InGaAlAs/InP quantum dots formed by a ripening process in molecular beam epitaxy: a promising system for broad-range single …
P Holewa, M Gawełczyk, A Maryński, P Wyborski, JP Reithmaier, G Sęk, ...
arXiv preprint arXiv:2011.09198, 2020
Lateral interdot coupling among dense ensemble of InAs quantum dots grown on InP substrate observed at cryogenic temperatures
A Maryński, M Syperek, M Pieczarka, M Gawełczyk, J Misiewicz, V Liverini, ...
Journal of Physics: Conference Series 906 (1), 012008, 2017
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