Characterization of the variable retention time in dynamic random access memory H Kim, B Oh, Y Son, K Kim, SY Cha, JG Jeong, SJ Hong, H Shin
IEEE Transactions on Electron Devices 58 (9), 2952-2958, 2011
31 2011 Characterization of an oxide trap leading to random telegraph noise in gate-induced drain leakage current of DRAM cell transistors B Oh, HJ Cho, H Kim, Y Son, T Kang, S Park, S Jang, JH Lee, H Shin
IEEE transactions on electron devices 58 (6), 1741-1747, 2011
30 2011 Improvement by Controlling Extrinsic Parasitics in Circuit-Level MOS TransistorHS Jhon, JH Lee, J Lee, B Oh, I Song, Y Yun, BG Park, JD Lee, H Shin
IEEE Electron Device Letters 30 (12), 1323-1325, 2009
25 2009 Investigation of Gate Etch Damage at Metal/High- Gate Dielectric Stack Through Random Telegraph Noise in Gate Edge Direct Tunneling Current HJ Cho, Y Son, B Oh, S Jang, JH Lee, BG Park, H Shin
IEEE Electron Device Letters 32 (4), 569-571, 2011
24 2011 Electronic device BC Oh, YJ Shin
US Patent 9,437,289, 2016
18 2016 Study of trap models related to the variable retention time phenomenon in DRAM H Kim, B Oh, Y Son, K Kim, SY Cha, JG Jeong, SJ Hong, H Shin
IEEE transactions on electron devices 58 (6), 1643-1648, 2011
18 2011 Enhancing dram self-refresh for idle power reduction B Oh, N Abeyratne, J Ahn, RG Dreslinski, T Mudge
Proceedings of the 2016 International Symposium on Low Power Electronics and …, 2016
16 2016 Delay locked loop DH Jung, J Kim, KH Ryu, SO Jung, BC Oh
US Patent 9,154,140, 2015
16 2015 Characterization of border trap density with the multifrequency charge pumping technique in dual-layer gate oxide Y Son, S Park, T Kang, B Oh, H Shin
IEEE transactions on electron devices 58 (8), 2752-2758, 2011
14 2011 Study on time constants of random telegraph noise in gate leakage current through hot-carrier stress test HJ Cho, Y Son, BC Oh, S Lee, JH Lee, BG Park, H Shin
IEEE electron device letters 31 (9), 1029-1031, 2010
14 2010 Resistance change memory M Takahashi, A Katayama, DK Kim, BC Oh
US Patent 9,001,559, 2015
10 2015 Random telegraph signal-like fluctuation created by Fowler–Nordheim stress in gate induced drain leakage current of the saddle type dynamic random access memory cell transistor H Kim, B Oh, K Kim, SY Cha, JG Jeong, SJ Hong, JH Lee, BG Park, ...
Japanese Journal of Applied Physics 49 (9R), 094102, 2010
10 2010 Observation of slow oxide traps at MOSFETs having metal/high-k gate dielectric stack in accumulation mode HJ Cho, Y Son, B Oh, S Lee, JH Lee, BG Park, H Shin
IEEE transactions on electron devices 57 (10), 2697-2703, 2010
10 2010 Electronic device including semiconductor memory and operation method thereof BC Oh, JH Bae, K Fujita, Y Shirai
US Patent App. 14/560,819, 2015
9 2015 Resistance change memory A Katayama, M Takahashi, T Inaba, HS Yim, DK Kim, BC Oh, JW Lee
US Patent 9,741,434, 2017
8 2017 Checkpointing exascale memory systems with existing memory technologies N Abeyratne, HM Chen, B Oh, R Dreslinski, C Chakrabarti, T Mudge
Proceedings of the Second International Symposium on Memory Systems, 18-29, 2016
8 2016 Electronic device and method for operating the same BC Oh
US Patent 9,384,828, 2016
8 2016 Enhanced Memory Device B Oh, S Abeyratne, RG Dreslinski, T Mudge
US Patent 10,002,657, 2017
7 2017 Voltage converter J Kim, DH Jung, KH Ryu, SO Jung, BC Oh
US Patent 9,413,236, 2016
5 2016 Rethinking DRAM's page mode with STT-MRAM B Oh, N Abeyratne, NS Kim, J Ahn, RG Dreslinski, T Mudge
IEEE Transactions on Computers 72 (5), 1503-1517, 2022
4 2022