| 8 W continuous wave front‐facet power from broad‐waveguide Al‐free 980 nm diode lasers LJ Mawst, A Bhattacharya, J Lopez, D Botez, DZ Garbuzov, L DeMarco, ... Applied Physics Letters 69 (11), 1532-1534, 1996 | 235 | 1996 |
| Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling S Turuvekere, N Karumuri, AA Rahman, A Bhattacharya, A DasGupta, ... IEEE Transactions on Electron Devices 60 (10), 3157-3165, 2013 | 233 | 2013 |
| 8 W continuous wave front‐facet power from broad‐waveguide Al‐free 980 nm diode lasers LJ Mawst, A Bhattacharya, J Lopez, D Botez, DZ Garbuzov, L DeMarco, ... Applied physics letters 69 (11), 1532-1534, 1996 | 233 | 1996 |
| Synthesis and characterization of ReS2 and ReSe2 layered chalcogenide single crystals AB Bhakti Jariwala, Damien Voiry, Apoorv Jindal, Bhagyashree A Chalke ... Chemistry of Materials, 10.1021/acs.chemmater.6b00364, 2016 | 178* | 2016 |
| Highly Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1T′-ReSe2 A Arora, J Noky, M Drüppel, B Jariwala, T Deilmann, R Schneider, ... Nano letters 17 (5), 3202-3207, 2017 | 127 | 2017 |
| 66% CW wallplug efficiency from Al-free 0.98 μm-emitting diode lasers D Botez, LJ Mawst, A Bhattacharya, J Lopez, J Li, TF Kuech, VP Iakovlev, ... Electronics Letters 32 (21), 2012-2013, 1996 | 119 | 1996 |
| A facile process for soak-and-peel delamination of CVD graphene from substrates using water P Gupta, PD Dongare, S Grover, S Dubey, H Mamgain, A Bhattacharya, ... Scientific reports 4 (1), 3882, 2014 | 105 | 2014 |
| Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth P Gupta, AA Rahman, S Subramanian, S Gupta, A Thamizhavel, T Orlova, ... Scientific Reports 6, 23708, 2016 | 102 | 2016 |
| Magnetotransport properties of individual InAs nanowires S Dhara, HS Solanki, V Singh, A Narayanan, P Chaudhari, M Gokhale, ... Physical Review B 79 (12), 121311, 2009 | 102 | 2009 |
| MOVPE growth of semipolar III-nitride semiconductors on CVD graphene P Gupta, AA Rahman, N Hatui, MR Gokhale, MM Deshmukh, ... Journal of Crystal Growth 372, 105-108, 2013 | 86 | 2013 |
| Correlation of InGaP (001) surface structure during growth and bulk ordering M Zorn, P Kurpas, AI Shkrebtii, B Junno, A Bhattacharya, K Knorr, ... Physical Review B 60 (11), 8185, 1999 | 83 | 1999 |
| Recharging and rejuvenation of decontaminated N95 masks E Hossain, S Bhadra, H Jain, S Das, A Bhattacharya, S Ghosh, D Levine Physics of Fluids 32 (9), 093304, 2020 | 82 | 2020 |
| Distorted wurtzite unit cells: Determination of lattice parameters of nonpolar a-plane AlGaN and estimation of solid phase Al content MR Laskar, T Ganguli, AA Rahman, A Mukherjee, N Hatui, MR Gokhale, ... Journal of Applied Physics 109 (1), 013107-013107-8, 2011 | 61 | 2011 |
| Study of sputtered molybdenum nitride as a diffusion barrier NG Anitha, V.P., Bhattacharya, A., Patil, M S. Thin Solid Films 236 (1), 306-310, 1993 | 60 | 1993 |
| Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes S De, A Layek, S Bhattacharya, D Kumar Das, A Kadir, A Bhattacharya, ... Applied Physics Letters 101 (12), 121919, 2012 | 59 | 2012 |
| High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation LJ Mawst, A Bhattacharya, M Nesnidal, J Lopez, D Botez, JA Morris, ... Applied physics letters 67 (20), 2901-2903, 1995 | 59 | 1995 |
| Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum‐Well Light‐Emitting Diodes S De, A Layek, A Raja, A Kadir, MR Gokhale, A Bhattacharya, S Dhar, ... Advanced Functional Materials 21 (20), 3828-3835, 2011 | 55 | 2011 |
| Three-core ARROW-type diode laser: novel high-power, single-mode device, and effective master oscillator for flared antiguided MOPA's C Zmudzinski, D Botez, LI Mawst, A Bhattacharya, M Nesnidal, RF Nabiev IEEE Journal of Selected Topics in Quantum Electronics 1 (2), 129-137, 1995 | 55 | 1995 |
| Tuning mechanical modes and influence of charge screening in nanowire resonators HS Solanki, S Sengupta, S Dhara, V Singh, S Patil, R Dhall, J Parpia, ... Physical Review B 81 (11), 115459, 2010 | 54 | 2010 |
| Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction M Frentrup, N Hatui, T Wernicke, J Stellmach, A Bhattacharya, M Kneissl Journal of Applied Physics 114 (21), 213509, 2013 | 51 | 2013 |
A Azizur RahmanScientific Officer, Tata Institute of Fundamental ResearchVerified email at tifr.res.in
