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Martin Giles
Martin Giles
Intel Corporation, Retired
Bestätigte E-Mail-Adresse bei ieee.org
Titel
Zitiert von
Zitiert von
Jahr
A 14nm logic technology featuring 2nd-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm2 SRAM cell size
S Natarajan, M Agostinelli, S Akbar, M Bost, A Bowonder, V Chikarmane, ...
2014 IEEE international electron devices meeting, 3.7. 1-3.7. 3, 2014
7472014
Process technology variation
KJ Kuhn, MD Giles, D Becher, P Kolar, A Kornfeld, R Kotlyar, ST Ma, ...
IEEE Transactions on Electron Devices 58 (8), 2197-2208, 2011
4692011
Analysis of graphene nanoribbons as a channel material for field-effect transistors
B Obradovic, R Kotlyar, F Heinz, P Matagne, T Rakshit, MD Giles, ...
Applied Physics Letters 88 (14), 2006
4582006
Transient phosphorus diffusion below the amorphization threshold
MD Giles
2nd International Symposium on Process Physics and Modeling in Semiconductors, 1990
4031990
Silicon and silicon germanium nanowire structures
KJ Kuhn, S Kim, R Rios, SM Cea, MD Giles, A Cappellani, T Rakshit, ...
US Patent 8,753,942, 2014
3152014
Physics of hole transport in strained silicon MOSFET inversion layers
EX Wang, P Matagne, L Shifren, B Obradovic, R Kotlyar, S Cea, M Stettler, ...
IEEE Transactions on Electron Devices 53 (8), 1840-1851, 2006
1742006
Assessment of room-temperature phonon-limited mobility in gated silicon nanowires
R Kotlyar, B Obradovic, P Matagne, M Stettler, MD Giles
Applied Physics Letters 84 (25), 5270-5272, 2004
1732004
Explanation of reverse short channel effect by defect gradients
CS Rafferty, HH Vuong, SA Eshraghi, MD Giles, MR Pinto, SJ Hillenius
Proceedings of IEEE International Electron Devices Meeting, 311-314, 1993
1221993
Gate-induced strain for MOS performance improvement
T Hoffman, SM Cea, MD Giles
US Patent 6,982,433, 2006
1102006
Control of semiconductor manufacturing equipment: Real-time feedback control of a reactive ion etcher
BA Rashap, ME Elta, H Etemad, JP Fournier, JS Freudenberg, MD Giles, ...
IEEE Transactions on Semiconductor Manufacturing 8 (3), 286-297, 1995
1041995
The ultimate CMOS device and beyond
KJ Kuhn, U Avci, A Cappellani, MD Giles, M Haverty, S Kim, R Kotlyar, ...
2012 International Electron Devices Meeting, 8.1. 1-8.1. 4, 2012
972012
High performance Hi-K+ metal gate strain enhanced transistors on (110) silicon
P Packan, S Cea, H Deshpande, T Ghani, M Giles, O Golonzka, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
842008
Silicon and silicon germanium nanowire structures
KJ Kuhn, S Kim, R Rios, SM Cea, MD Giles, A Cappellani, T Rakshit, ...
US Patent 9,129,829, 2015
732015
Understanding stress enhanced performance in Intel 90nm CMOS technology
MD Giles, M Armstrong, C Auth, SM Cea, T Ghani, T Hoffmann, R Kotlyar, ...
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 118-119, 2004
662004
Transient phosphorus diffusion from silicon and argon implantation damage
MD Giles
Applied physics letters 62 (16), 1940-1942, 1993
661993
Replacement spacers for MOSFET fringe capacitance reduction and processes of making same
M Giles, T Rakshit, L Shifren, J Kavalieros, W Rachmady
US Patent 7,838,373, 2010
652010
Nanowire structures having non-discrete source and drain regions
SM Cea, A Cappellani, MD Giles, R Rios, S Kim, KJ Kuhn
US Patent 9,087,863, 2015
642015
Inversion mobility and gate leakage in high-k/metal gate MOSFETs
R Kotlyar, MD Giles, P Matagne, B Obradovic, L Shifren, M Stettler, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
642004
Non-planar device having uniaxially strained semiconductor body and method of making same
SM Cea, R Kotlyar, JT Kavalieros, MD Giles, T Ghani, KJ Kuhn, M Kuhn, ...
US Patent 8,558,279, 2013
632013
Large enhancement of boron solubility in silicon due to biaxial stress
B Sadigh, TJ Lenosky, MJ Caturla, AA Quong, LX Benedict, ...
Applied physics letters 80 (25), 4738-4740, 2002
612002
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