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Rajat Sharma
Rajat Sharma
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Zitiert von
Zitiert von
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Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
T Fujii, Y Gao, R Sharma, EL Hu, SP DenBaars, S Nakamura
Applied physics letters 84 (6), 855-857, 2004
17652004
Technique for the growth and fabrication of semipolar (Ga, A1, In, B) N thin films, heterostructures, and devices
RM Farrell Jr, TJ Baker, A Chakraborty, BA Haskell, PM Pattison, ...
US Patent 7,846,757, 2010
3302010
Room-temperature continuous-wave lasing in GaN/InGaN microdisks
AC Tamboli, ED Haberer, R Sharma, KH Lee, S Nakamura, EL Hu
Nature photonics 1 (1), 61-64, 2007
3302007
Demonstration of a semipolar (101¯ 3¯) InGaN∕ GaN green light emitting diode
R Sharma, PM Pattison, H Masui, RM Farrell, TJ Baker, BA Haskell, F Wu, ...
Applied Physics Letters 87 (23), 2005
3002005
Method for growth of semipolar (Al, In, Ga, B) N optoelectronic devices
H Zhong, JF Kaeding, R Sharma, JS Speck, SP DenBaars, S Nakamura
US Patent 7,858,996, 2010
2822010
Multi color active regions for white light emitting diode
J Raring, R Sharma, C Poblenz
US Patent 8,314,429, 2012
2592012
Optical device structure using GaN substrates for laser applications
JW Raring, DF Feezell, NJ Pfister, R Sharma
US Patent 9,531,164, 2016
2562016
Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution
A David, T Fujii, R Sharma, K McGroddy, S Nakamura, SP DenBaars, ...
Applied Physics Letters 88 (6), 2006
2562006
Semiconductor light-emitting device
R Sharma, PM Pattison, JF Kaeding, S Nakamura
US Patent 8,227,820, 2012
2542012
Reflection Mode Wavelength Conversion Material for Optical Devices Using Non-Polar or Semipolar Gallium Containing Materials
TA Trottier, MR Krames, R Sharma, FTC Shum
US Patent App. 12/887,207, 2011
2362011
Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction
A David, C Meier, R Sharma, FS Diana, SP Denbaars, E Hu, S Nakamura, ...
Applied physics letters 87 (10), 2005
2052005
Method and structure for manufacture of light emitting diode devices using bulk GaN
C Poblenz, MC Schmidt, DF Feezell, JW Raring, R Sharma
US Patent 8,252,662, 2012
2042012
Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
R Sharma, EM Hall, C Poblenz, MP D'evelyn
US Patent 8,284,810, 2012
1792012
Quantum Dot Wavelength Conversion for Optical Devices Using Nonpolar or Semipolar Gallium Containing Materials
TA Trottier, MR Krames, R Sharma, FTC Shum
US Patent App. 13/014,622, 2011
1442011
Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photo-enhanced chemical wet etching
Y Gao, T Fujii, R Sharma, K Fujito, SP Denbaars, S Nakamura, EL Hu
Japanese journal of applied physics 43 (5A), L637, 2004
1342004
292 nm AlGaN single-quantum well light emitting diodes grown on transparent AlN base
A Hanlon, PM Pattison, JF Kaeding, R Sharma, P Fini, S Nakamura
Japanese journal of applied physics 42 (6B), L628, 2003
1342003
Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
R Sharma, EM Hall, C Poblenz, MP D'evelyn
US Patent 8,494,017, 2013
1292013
Effect of nitridation on polarity, microstructure, and morphology of AlN films
Y Wu, A Hanlon, JF Kaeding, R Sharma, PT Fini, S Nakamura, JS Speck
Applied Physics Letters 84 (6), 912-914, 2004
1202004
GaN blue photonic crystal membrane nanocavities
YS Choi, K Hennessy, R Sharma, E Haberer, Y Gao, SP DenBaars, ...
Applied Physics Letters 87 (24), 2005
1172005
Free-standing, optically pumped, GaN∕ InGaN microdisk lasers fabricated by photoelectrochemical etching
ED Haberer, R Sharma, C Meier, AR Stonas, S Nakamura, SP DenBaars, ...
Applied physics letters 85 (22), 5179-5181, 2004
1022004
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