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Gordon Callsen
Gordon Callsen
University of Bremen, Institute of Solid State Physics
Bestätigte E-Mail-Adresse bei ifp.uni-bremen.de - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers
MR Wagner, G Callsen, JS Reparaz, JH Schulze, R Kirste, M Cobet, ...
Physical Review B—Condensed Matter and Materials Physics 84 (3), 035313, 2011
2462011
Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap
F Nippert, SY Karpov, G Callsen, B Galler, T Kure, C Nenstiel, MR Wagner, ...
Applied Physics Letters 109 (16), 2016
1072016
Lithium related deep and shallow acceptors in Li-doped ZnO nanocrystals
C Rauch, W Gehlhoff, MR Wagner, E Malguth, G Callsen, R Kirste, ...
Journal of Applied Physics 107 (2), 2010
992010
Signature of the two-dimensional phonon dispersion in graphene probed by double-resonant Raman scattering
P May, M Lazzeri, P Venezuela, F Herziger, G Callsen, JS Reparaz, ...
Physical Review B—Condensed Matter and Materials Physics 87 (7), 075402, 2013
982013
A quantum optical study of thresholdless lasing features in high-β nitride nanobeam cavities
ST Jagsch, NV Triviño, F Lohof, G Callsen, S Kalinowski, IM Rousseau, ...
Nature communications 9 (1), 564, 2018
802018
Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurements
G Callsen, JS Reparaz, MR Wagner, R Kirste, C Nenstiel, A Hoffmann, ...
Applied Physics Letters 98 (6), 2011
782011
Optical signature of Mg-doped GaN: Transfer processes
G Callsen, MR Wagner, T Kure, JS Reparaz, M Bügler, J Brunnmeier, ...
Physical Review B—Condensed Matter and Materials Physics 86 (7), 075207, 2012
772012
Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN
R Kirste, R Collazo, G Callsen, MR Wagner, T Kure, J Sebastian Reparaz, ...
Journal of Applied Physics 110 (9), 2011
652011
Excited state properties of donor bound excitons in ZnO
BK Meyer, J Sann, S Eisermann, S Lautenschlaeger, MR Wagner, ...
Physical Review B—Condensed Matter and Materials Physics 82 (11), 115207, 2010
652010
Optical signatures of nitrogen acceptors in ZnO
S Lautenschlaeger, S Eisermann, G Haas, EA Zolnowski, MN Hofmann, ...
Physical Review B—Condensed Matter and Materials Physics 85 (23), 235204, 2012
632012
Point-defect nature of the ultraviolet absorption band in AlN
D Alden, JS Harris, Z Bryan, JN Baker, P Reddy, S Mita, G Callsen, ...
Physical Review Applied 9 (5), 054036, 2018
582018
Manifestation of unconventional biexciton states in quantum dots
G Hönig, G Callsen, A Schliwa, S Kalinowski, C Kindel, S Kako, ...
Nature communications 5 (1), 5721, 2014
582014
Compensation effects in GaN: Mg probed by Raman spectroscopy and photoluminescence measurements
R Kirste, MP Hoffmann, J Tweedie, Z Bryan, G Callsen, T Kure, C Nenstiel, ...
Journal of Applied Physics 113 (10), 2013
582013
Germanium–the superior dopant in n‐type GaN
C Nenstiel, M Bügler, G Callsen, F Nippert, T Kure, S Fritze, A Dadgar, ...
physica status solidi (RRL)–Rapid Research Letters 9 (12), 716-721, 2015
572015
Steering photon statistics in single quantum dots: From one-to two-photon emission
G Callsen, A Carmele, G Hönig, C Kindel, J Brunnmeier, MR Wagner, ...
Physical Review B—Condensed Matter and Materials Physics 87 (24), 245314, 2013
572013
Effects of strain on the valence band structure and exciton-polariton energies in ZnO
MR Wagner, G Callsen, JS Reparaz, R Kirste, A Hoffmann, AV Rodina, ...
Physical Review B 88 (23), 235210, 2013
562013
Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method
D Gogova, PP Petrov, M Buegler, MR Wagner, C Nenstiel, G Callsen, ...
Journal of Applied Physics 113 (20), 2013
532013
Toward bright and pure single photon emitters at 300 K based on GaN quantum dots on silicon
S Tamariz, G Callsen, J Stachurski, K Shojiki, R Butté, N Grandjean
Acs Photonics 7 (6), 1515-1522, 2020
492020
Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence
F Nippert, S Karpov, I Pietzonka, B Galler, A Wilm, T Kure, C Nenstiel, ...
Japanese Journal of Applied Physics 55 (5S), 05FJ01, 2016
482016
Spectral diffusion in nitride quantum dots: Emission energy dependent linewidths broadening via giant built‐in dipole moments
C Kindel, G Callsen, S Kako, T Kawano, H Oishi, G Hönig, A Schliwa, ...
physica status solidi (RRL)–Rapid Research Letters 8 (5), 408-413, 2014
452014
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