RR LaPierre
RR LaPierre
Bestätigte E-Mail-Adresse bei mcmaster.ca
TitelZitiert vonJahr
GaAs core− shell nanowires for photovoltaic applications
JA Czaban, DA Thompson, RR LaPierre
Nano letters 9 (1), 148-154, 2008
4722008
III–V nanowire photovoltaics: review of design for high efficiency
RR LaPierre, ACE Chia, SJ Gibson, CM Haapamaki, J Boulanger, R Yee, ...
physica status solidi (RRL)–Rapid Research Letters 7 (10), 815-830, 2013
1552013
Growth mechanisms of GaAs nanowires by gas source molecular beam epitaxy
MC Plante, RR LaPierre
Journal of crystal growth 286 (2), 394-399, 2006
1442006
Au-assisted growth of GaAs nanowires by gas source molecular beam epitaxy: Tapering, sidewall faceting and crystal structure
MC Plante, RR LaPierre
Journal of Crystal Growth 310 (2), 356-363, 2008
1082008
Sulfur passivation and contact methods for GaAs nanowire solar cells
N Tajik, Z Peng, P Kuyanov, RR LaPierre
Nanotechnology 22 (22), 225402, 2011
1042011
Theoretical conversion efficiency of a two-junction III-V nanowire on Si solar cell
RR LaPierre
Journal of applied physics 110 (1), 014310, 2011
982011
Numerical model of current-voltage characteristics and efficiency of GaAs nanowire solar cells
RR LaPierre
Journal of Applied Physics 109 (3), 034311, 2011
942011
Control of GaAs nanowire morphology and crystal structure
MC Plante, RR LaPierre
Nanotechnology 19 (49), 495603, 2008
912008
Analytical description of the metal-assisted growth of III–V nanowires: Axial and radial growths
MC Plante, RR LaPierre
Journal of applied physics 105 (11), 114304, 2009
872009
Spinodal-like decomposition of InGaAsP (100) InP grown by gas source molecular beam epitaxy
RR LaPierre, T Okada, BJ Robinson, DA Thompson, GC Weatherly
Journal of crystal growth 155 (1-2), 1-15, 1995
761995
A GaAs nanowire/P3HT hybrid photovoltaic device
H Bi, RR LaPierre
Nanotechnology 20 (46), 465205, 2009
682009
GaP/GaAsP/GaP core–multishell nanowire heterostructures on (111) silicon
PK Mohseni, C Maunders, GA Botton, RR LaPierre
Nanotechnology 18 (44), 445304, 2007
662007
Lateral composition modulation in InGaAsP strained layers and quantum wells grown on (100) InP by gas source molecular beam epitaxy
RR LaPierre, T Okada, BJ Robinson, DA Thompson, GC Weatherly
Journal of crystal growth 158 (1-2), 6-14, 1996
661996
Self-directed growth of AlGaAs core− shell nanowires for visible light applications
C Chen, S Shehata, C Fradin, R LaPierre, C Couteau, G Weihs
Nano letters 7 (9), 2584-2589, 2007
652007
A review of III–V nanowire infrared photodetectors and sensors
RR LaPierre, M Robson, KM Azizur-Rahman, P Kuyanov
Journal of Physics D: Applied Physics 50 (12), 123001, 2017
612017
Layer-by-layer and step-flow growth mechanisms in GaAsP/GaP nanowire heterostructures
C Chen, MC Plante, C Fradin, RR LaPierre
Journal of materials research 21 (11), 2801-2809, 2006
522006
Optical characteristics of GaAs nanowire solar cells
Y Hu, RR LaPierre, M Li, K Chen, JJ He
Journal of Applied Physics 112 (10), 104311, 2012
502012
Analytical model of surface depletion in GaAs nanowires
ACE Chia, RR LaPierre
Journal of Applied Physics 112 (6), 063705, 2012
472012
Dependence of InGaP nanowire morphology and structure on molecular beam epitaxy growth conditions
A Fakhr, YM Haddara, RR LaPierre
Nanotechnology 21 (16), 165601, 2010
472010
Onset of stacking faults in InP nanowires grown by gas source molecular beam epitaxy
DM Cornet, VGM Mazzetti, RR LaPierre
Applied physics letters 90 (1), 013116, 2007
462007
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