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Arianne Soares do Nascimento Pereira
Arianne Soares do Nascimento Pereira
ISPGaya
Bestätigte E-Mail-Adresse bei ispgaya.pt
Titel
Zitiert von
Zitiert von
Jahr
An analytical estimation model for the spreading resistance of Double-Gate FinFETs
CT Malheiro, ASN Pereira, R Giacomini
2012 8th International Caribbean Conference on Devices, Circuits and Systems …, 2012
82012
Filter-free color pixel sensor using gated PIN photodiodes and machine learning techniques
JB Junior, A Pereira, R Buhler, A Perin, C Novo, M Galeti, J Oliveira, ...
Microelectronics Journal, 105337, 2021
72021
An accurate closed-expression model for FinFETs parasitic resistance
ASN Pereira, R Giacomini
Microelectronics Reliability 55 (3-4), 470-480, 2015
62015
An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models
ASN Pereira, G de Streel, N Planes, M Haond, R Giacomini, D Flandre, ...
Solid-State Electronics 128, 67-71, 2017
52017
SOI Stacked Transistors Tolerance to Single-Event Effects
AL Perin, ASN Pereira, RT Buhler, MAG da Silveira, RC Giacomini
IEEE Transactions on Device and Materials Reliability 19 (2), 393-401, 2019
32019
Analysis and modelling of temperature effect on DIBL in UTBB FD SOI MOSFETs
ASN Pereira, G de Streel, N Planes, M Haond, R Giacomini, D Flandre, ...
2016 Joint International EUROSOI Workshop and International Conference on …, 2016
32016
A Simple Electron Mobility Model Considering the Silicon-Dielectric Interface Orientation for Circular Surrounding-Gate Transistor
AL Perin, ASN Pereira, PG Der Agopian, JA Martino, R Giacomini
Journal of Integrated Circuits and Systems 7 (2), 100-106, 2012
32012
Comparative analysis of parasitic resistance extraction methods applied to FinFETs
FHM Oka, ASN Pereira, RC Giacomini
STUDENT FORUMCHIP ON THE MOUNTAINS, 1-4, 2016
22016
A New Analytic Model for Double Gate FinFETs Parasitic Resistance
ASN Pereira, R Giacomini
ECS Transactions 49 (1), 127, 2012
22012
Modelo analítico de resistência parasitária para FINFETS de porta dupla
ASN Pereira
Centro Universitário da FEI, São Bernardo do Campo, 2012
2012
A Simple Electron Mobility Model Considering the Impact of Silicon-Dielectric Interface Orientation for Surrounding Gate Devices
AL Perin, AS Pereira, PG Agopian, JA Martino, RC Giacomini
ECS Transactions 39 (1), 179, 2011
2011
Estudo do fator de corpo para diferentes tecnologias MOS: BULK, PDSOI e FDSOI
AG Reimberg, N Merzbahcer, ASN Pereira
STUDY OF SOURCE AND DRAIN GEOMETRY IMPACT ON SERIES RESISTANCE OF TRIPLE GATE FINFETS
AS do Nascimento Pereira, PG Der Agopian, R Giacomini
EFEITO DA POLARIZAÇÃO DO SUBSTRATO E DA TEMPERATURA EM TRANSISTORES SOI UTBB
GP de Lima, AS do Nascimento Pereira
MODELOS ANALÍTICOS PARA EFEITOS DE CANAL CURTO EM TRANSISTORES DE PORTA DUPLA SIMÉTRICOS E ASSIMÉTRICOS
CU FEI, ASDON PEREIRA
Análise Experimental de Métodos de Extração da Resistência Parasitária em FinFETs
FHM Oka, ASN Pereira, RC Giacomini
Análise da densidade de carga de inversão em função da temperatura em UTBB SOI MOSFETs
N Merzbahcer, A Pereira, R Giacomini
ESTUDO DE MODELOS DE MOBILIDADE PARA A SIMULAÇÃO DE DISPOSITIVOS SOI FINFET
D de Oliveira Silva, AS do Nascimento Pereira, R Giacomini
ESTUDO DA RESISTÊNCIA SÉRIE DE FONTE E DRENO EM TRANSISTORES SOI MOSFET COM LDD
GAV Rodrigues, AS do Nascimento Pereira, R Giacomini
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