Dr. Hajdin Ceric
Dr. Hajdin Ceric
Institut für Mikroelektronik, TU Wien
Bestätigte E-Mail-Adresse bei iue.tuwien.ac.at - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Physically based models of electromigration: From Black’s equation to modern TCAD models
RL De Orio, H Ceric, S Selberherr
Microelectronics Reliability 50 (6), 775-789, 2010
1362010
Electromigration in submicron interconnect features of integrated circuits
H Ceric, S Selberherr
Materials Science and Engineering: R: Reports 71 (5-6), 53-86, 2011
762011
Through silicon via reliability
C Cassidy, J Kraft, S Carniello, F Roger, H Ceric, AP Singulani, E Langer, ...
IEEE Transactions on Device and Materials Reliability 12 (2), 285-295, 2012
632012
Interface traps density-of-states as a vital component for hot-carrier degradation modeling
SE Tyaginov, IA Starkov, O Triebl, J Cervenka, C Jungemann, S Carniello, ...
Microelectronics Reliability 50 (9-11), 1267-1272, 2010
622010
Stress, sheet resistance, and microstructure evolution of electroplated Cu films during self-annealing
R Huang, W Robl, H Ceric, T Detzel, G Dehm
IEEE transactions on device and materials reliability 10 (1), 47-54, 2009
552009
A comprehensive TCAD approach for assessing electromigration reliability of modern interconnects
H Ceric, RL de Orio, J Cervenka, S Selberherr
IEEE Transactions on Device and Materials Reliability 9 (1), 9-19, 2008
542008
Hot-carrier degradation caused interface state profile—Simulation versus experiment
I Starkov, S Tyaginov, H Enichlmair, J Cervenka, C Jungemann, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011
372011
Electromigration failure in a copper dual-damascene structure with a through silicon via
RL De Orio, H Ceric, S Selberherr
Microelectronics Reliability 52 (9-10), 1981-1986, 2012
342012
Sleep apnoea and stroke
S Sharma, A Culebras
Stroke and vascular neurology 1 (4), 185-191, 2016
302016
Modeling of hot-carrier degradation in nLDMOS devices: Different approaches to the solution of the Boltzmann transport equation
P Sharma, S Tyaginov, Y Wimmer, F Rudolf, K Rupp, M Bina, ...
IEEE Transactions on Electron Devices 62 (6), 1811-1818, 2015
292015
Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET
S Tyaginov, I Starkov, O Triebl, H Ceric, T Grasser, H Enichlmair, JM Park, ...
2011 International Conference on Simulation of Semiconductor Processes and …, 2011
262011
Microstructure and stress aspects of electromigration modeling
H Ceric, R Heinzl, C Hollauer, T Grasser, S Selberherr
AIP Conference Proceedings 817 (1), 262-268, 2006
262006
Device and materials reliability
R Huang, W Robl, H Ceric, T Detzel, G Dehm
IEEE Transactions on 12 (2), 233, 2012
24*2012
Optimization of the perfectly matched layer for the finite-element time-domain method
M Movahhedi, A Abdipour, H Ceric, A Sheikholeslami, S Selberherr
IEEE microwave and wireless components letters 17 (1), 10-12, 2007
232007
Hot-carrier degradation modeling using full-band Monte-Carlo simulations
SE Tyaginov, IA Starkov, O Triebl, J Cervenka, C Jungemann, S Carniello, ...
2010 17th IEEE International Symposium on the Physical and Failure Analysis …, 2010
212010
A compact model for early electromigration failures of copper dual-damascene interconnects
RL De Orio, H Ceric, S Selberherr
Microelectronics Reliability 51 (9-11), 1573-1577, 2011
202011
An adaptive grid approach for the simulation of electromigration induced void migration
H Ceric, S Selberherr
IEICE Transactions on Electronics 86 (3), 421-426, 2003
182003
The role of cold carriers and the multiple-carrier process of Si–H bond dissociation for hot-carrier degradation in n-and p-channel LDMOS devices
P Sharma, S Tyaginov, M Jech, Y Wimmer, F Rudolf, H Enichlmair, ...
Solid-State Electronics 115, 185-191, 2016
122016
Apparatus for measuring local stress of metallic films, using an array of parallel laser beams during rapid thermal processing
R Huang, CA Taylor, S Himmelsbach, H Ceric, T Detzel
Measurement Science and Technology 21 (5), 055702, 2010
122010
Impact of NBTI-driven parameter degradation on lifetime of a 90nm p-MOSFET
R Wittmann, H Puchner, L Hinh, H Ceric, A Gehring, S Selberherr
2005 IEEE International Integrated Reliability Workshop, 4 pp., 2005
112005
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