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Dr. Hajdin Ceric
Dr. Hajdin Ceric
Institut für Mikroelektronik, TU Wien
Verified email at iue.tuwien.ac.at - Homepage
Title
Cited by
Cited by
Year
Physically based models of electromigration: From Black’s equation to modern TCAD models
RL De Orio, H Ceric, S Selberherr
Microelectronics Reliability 50 (6), 775-789, 2010
1852010
Electromigration in submicron interconnect features of integrated circuits
H Ceric, S Selberherr
Materials Science and Engineering: R: Reports 71 (5-6), 53-86, 2011
1152011
Interface traps density-of-states as a vital component for hot-carrier degradation modeling
SE Tyaginov, IA Starkov, O Triebl, J Cervenka, C Jungemann, S Carniello, ...
Microelectronics Reliability 50 (9-11), 1267-1272, 2010
782010
Through silicon via reliability
C Cassidy, J Kraft, S Carniello, F Roger, H Ceric, AP Singulani, E Langer, ...
IEEE Transactions on Device and Materials Reliability 12 (2), 285-295, 2012
722012
Stress, sheet resistance, and microstructure evolution of electroplated Cu films during self-annealing
R Huang, W Robl, H Ceric, T Detzel, G Dehm
IEEE transactions on device and materials reliability 10 (1), 47-54, 2009
722009
A comprehensive TCAD approach for assessing electromigration reliability of modern interconnects
H Ceric, RL de Orio, J Cervenka, S Selberherr
IEEE Transactions on Device and Materials Reliability 9 (1), 9-19, 2008
642008
Hot-carrier degradation caused interface state profile—Simulation versus experiment
I Starkov, S Tyaginov, H Enichlmair, J Cervenka, C Jungemann, ...
Journal of Vacuum Science & Technology B 29 (1), 2011
452011
Modeling of hot-carrier degradation in nLDMOS devices: Different approaches to the solution of the Boltzmann transport equation
P Sharma, S Tyaginov, Y Wimmer, F Rudolf, K Rupp, M Bina, ...
IEEE Transactions on Electron Devices 62 (6), 1811-1818, 2015
432015
Electromigration failure in a copper dual-damascene structure with a through silicon via
RL de Orio, H Ceric, S Selberherr
Microelectronics Reliability 52 (9-10), 1981-1986, 2012
372012
Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET
S Tyaginov, I Starkov, O Triebl, H Ceric, T Grasser, H Enichlmair, JM Park, ...
2011 International Conference on Simulation of Semiconductor Processes and …, 2011
372011
A compact model for early electromigration failures of copper dual-damascene interconnects
RL De Orio, H Ceric, S Selberherr
Microelectronics Reliability 51 (9-11), 1573-1577, 2011
312011
Optimization of the perfectly matched layer for the finite-element time-domain method
M Movahhedi, A Abdipour, H Ceric, A Sheikholeslami, S Selberherr
IEEE microwave and wireless components letters 17 (1), 10-12, 2007
312007
Microstructure and stress aspects of electromigration modeling
H Ceric, R Heinzl, C Hollauer, T Grasser, S Selberherr
AIP Conference Proceedings 817 (1), 262-268, 2006
292006
Hot-carrier degradation modeling using full-band Monte-Carlo simulations
SE Tyaginov, IA Starkov, O Triebl, J Cervenka, C Jungemann, S Carniello, ...
2010 17th IEEE International Symposium on the Physical and Failure Analysis …, 2010
272010
An adaptive grid approach for the simulation of electromigration induced void migration
H Ceric, S Selberherr
IEICE transactions on electronics 86 (3), 421-426, 2003
222003
Analysis of electromigration failure of nano-interconnects through a combination of modeling and experimental methods
H Ceric, H Zahedmanesh, K Croes
Microelectronics Reliability 100, 113362, 2019
202019
The role of cold carriers and the multiple-carrier process of Si–H bond dissociation for hot-carrier degradation in n-and p-channel LDMOS devices
P Sharma, S Tyaginov, M Jech, Y Wimmer, F Rudolf, H Enichlmair, ...
Solid-State Electronics 115, 185-191, 2016
172016
Impact of NBTI-driven parameter degradation on lifetime of a 90nm p-MOSFET
R Wittmann, H Puchner, L Hinh, H Ceric, A Gehring, S Selberherr
2005 IEEE International Integrated Reliability Workshop, 4 pp., 2005
172005
Modeling methods for analysis of electromigration degradation in nano-interconnects
H Ceric, S Selberherr, H Zahedmanesh, RL de Orio, K Croes
ECS Journal of Solid State Science and Technology 10 (3), 035003, 2021
142021
Apparatus for measuring local stress of metallic films, using an array of parallel laser beams during rapid thermal processing
R Huang, CA Taylor, S Himmelsbach, H Ceric, T Detzel
Measurement Science and Technology 21 (5), 055702, 2010
142010
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