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Andreas C. Betz
Andreas C. Betz
Research Scientist at Hitachi Cambridge Laboratory
Bestätigte E-Mail-Adresse bei cam.ac.uk
Titel
Zitiert von
Zitiert von
Jahr
Supercollision cooling in undoped graphene
AC Betz, SH Jhang, E Pallecchi, R Ferreira, G Fève, JM Berroir, B Plaçais
Nature Physics 9 (2), 109-112, 2013
2592013
Hot electron cooling by acoustic phonons in graphene
AC Betz, F Vialla, D Brunel, C Voisin, M Picher, A Cavanna, A Madouri, ...
Physical Review Letters 109 (5), 056805, 2012
1802012
Excitonic recombinations in h− BN: from bulk to exfoliated layers
A Pierret, J Loayza, B Berini, A Betz, B Plaçais, F Ducastelle, J Barjon, ...
Physical Review B 89 (3), 035414, 2014
892014
Graphene microwave transistors on sapphire substrates
E Pallecchi, C Benz, AC Betz, H Löhneysen, B Plaçais, R Danneau
Applied Physics Letters 99 (11), 2011
562011
Transport scattering time probed through rf admittance of a graphene capacitor
E Pallecchi, AC Betz, J Chaste, G Fève, B Huard, T Kontos, JM Berroir, ...
Physical Review B 83 (12), 125408, 2011
472011
Ambipolar quantum dots in intrinsic silicon
AC Betz, MF Gonzalez-Zalba, G Podd, AJ Ferguson
Applied Physics Letters 105 (15), 2014
292014
Ambipolar quantum dots in intrinsic silicon
AC Betz, MF Gonzalez-Zalba, G Podd, AJ Ferguson
Applied Physics Letters 105 (15), 2014
292014
High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors
AC Betz, S Barraud, Q Wilmart, B Placais, X Jehl, M Sanquer, ...
Applied Physics Letters 104 (4), 2014
202014
Graphene nanotransistors for RF charge detection
E Pallecchi, Q Wilmart, AC Betz, SH Jhang, G Feve, JM Berroir, S Lepillet, ...
Journal of Physics D: Applied Physics 47 (9), 094004, 2014
82014
A high-sensitivity gate-based charge sensor in silicon
MF Gonzalez-Zalba, AJ Ferguson, S Barraud, AC Betz
arXiv preprint arXiv:1405.2755, 2014
32014
Elastic and inelastic scattering in graphene studied by microwave transport and noise
A Betz
Paris 6, 2012
32012
Diffusions électronique élastique et inélastique dans le graphène étudiées par le transport micro-onde et le bruit.
A Betz
Université Pierre et Marie Curie-Paris VI, 2012
2012
Graphene Field-Effect Transistors on Hexagonal Boron Nitride Operating at Microwave Frequencies
C Benz, E Pallecchi, ZB Aziza, J Mohrmann, AC Betz, K Watanabe, ...
2012
Citation: Appl. Phys. Lett. 101, 010401 (2012); doi: 10.1063/1.4732513 View online: http://dx. doi. org/10.1063/1.4732513 View Table of Contents: http://apl. aip. org/resource …
NQ Lam
APPLIED PHYSICS LETTERS 101, 010401, 2012
2012
Comparative Study of Carbon Nanotube-and Graphene-Field-effect Transistors for GHz Charge Detection
A Betz
2008
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