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Jean Paul Salvestrini
Jean Paul Salvestrini
Georgia Tech Europe
Bestätigte E-Mail-Adresse bei georgiatech-metz.fr
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Zitiert von
Zitiert von
Jahr
Analysis and Control of the DC Drift in LiNbO-Based Mach–Zehnder Modulators
JP Salvestrini, L Guilbert, M Fontana, M Abarkan, S Gille
Journal of lightwave technology 29 (10), 1522-1534, 2011
1932011
Large-area two-dimensional layered hexagonal boron nitride grown on sapphire by metalorganic vapor phase epitaxy
X Li, S Sundaram, Y El Gmili, T Ayari, R Puybaret, G Patriarche, PL Voss, ...
Crystal Growth & Design 16 (6), 3409-3415, 2016
1242016
Bandgap energy bowing parameter of strained and relaxed InGaN layers
G Orsal, Y El Gmili, N Fressengeas, J Streque, R Djerboub, T Moudakir, ...
Optical Materials Express 4 (5), 1030-1041, 2014
1192014
Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN
T Ayari, S Sundaram, X Li, Y El Gmili, PL Voss, JP Salvestrini, ...
Applied Physics Letters 108 (17), 2016
872016
Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems
Y Halfaya, C Bishop, A Soltani, S Sundaram, V Aubry, PL Voss, ...
Sensors 16 (3), 273, 2016
802016
Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications
M Abid, T Moudakir, G Orsal, S Gautier, A En Naciri, Z Djebbour, JH Ryou, ...
Applied Physics Letters 100 (5), 2012
662012
Frequency and wavelength dependences of electro-optic coefficients in inorganic crystals
M Abarkan, JP Salvestrini, MD Fontana, M Aillerie
Applied Physics B 76, 765-769, 2003
652003
Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications
T Ayari, C Bishop, MB Jordan, S Sundaram, X Li, S Alam, Y ElGmili, ...
Scientific reports 7 (1), 15212, 2017
642017
Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study
Y El Gmili, G Orsal, K Pantzas, T Moudakir, S Sundaram, G Patriarche, ...
Acta Materialia 61 (17), 6587-6596, 2013
602013
Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE
X Li, MB Jordan, T Ayari, S Sundaram, Y El Gmili, S Alam, M Alam, ...
Scientific reports 7 (1), 786, 2017
502017
MOVPE grown periodic AlN/BAlN heterostructure with high boron content
X Li, S Sundaram, Y El Gmili, F Genty, S Bouchoule, G Patriache, ...
Journal of Crystal Growth 414, 119-122, 2015
492015
BAlN thin layers for deep UV applications
X Li, S Sundaram, YE Gmili, T Moudakir, F Genty, S Bouchoule, ...
physica status solidi (a) 212 (4), 745-750, 2015
482015
Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices
H Srour, JP Salvestrini, A Ahaitouf, S Gautier, T Moudakir, B Assouar, ...
Applied Physics Letters 99 (22), 2011
472011
Optical characterizations of YCa4O (BO3) 3 and Nd: YCa4O (BO3) 3 crystals
P Segonds, B Boulanger, B Ménaert, J Zaccaro, JP Salvestrini, ...
Optical Materials 29 (8), 975-982, 2007
462007
Experimental Study and Device Design of NO, NO2, and NH3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT
C Bishop, Y Halfaya, A Soltani, S Sundaram, X Li, J Streque, Y El Gmili, ...
IEEE Sensors Journal 16 (18), 6828-6838, 2016
442016
AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm
X Li, S Sundaram, P Disseix, G Le Gac, S Bouchoule, G Patriarche, ...
Optical Materials Express 5 (2), 380-392, 2015
442015
Electric-field frequency dependence of Pockels coefficients in 2-amino-5-nitropyridium dihydrogen phosphate organic–inorganic crystals
J Zaccaro, JP Salvestrini, A Ibanez, P Ney, MD Fontana
JOSA B 17 (3), 427-432, 2000
422000
Modeling, design, fabrication and experimentation of a GaN-based, 63Ni betavoltaic battery
CE Munson, Q Gaimard, K Merghem, S Sundaram, DJ Rogers, ...
Journal of Physics D: Applied Physics 51 (3), 035101, 2017
382017
Model of Ni-63 battery with realistic PIN structure
AO Charles E. Munson IV, Muhammad Arif, Jeremy Streque, Sofiane Belahsene ...
Journal of Applied Physics 118, 105101, 2015
38*2015
Interface state effects in GaN Schottky diodes
A Ahaitouf, H Srour, SOS Hamady, N Fressengeas, A Ougazzaden, ...
Thin Solid Films 522, 345-351, 2012
382012
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