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Hyeongrak Lim, Hyeong-Rak Lim, H. R. Lim, H.-R. Lim, HR. Lim
Hyeongrak Lim, Hyeong-Rak Lim, H. R. Lim, H.-R. Lim, HR. Lim
KAIST Electrical Engineering, Korea University, Korea Institute of Science and Technology (KIST)
Verified email at kaist.ac.kr
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Heterogeneous integration toward a monolithic 3-D chip enabled by III–V and Ge materials
SH Kim, SK Kim, JP Shim, DM Geum, G Ju, HS Kim, HJ Lim, HR Lim, ...
IEEE Journal of the Electron Devices Society 6, 579-587, 2018
352018
3D stackable synaptic transistor for 3D integrated artificial neural networks
SK Kim, YJ Jeong, P Bidenko, HR Lim, YR Jeon, H Kim, YJ Lee, ...
ACS applied materials & interfaces 12 (6), 7372-7380, 2020
212020
Photo-responsible synapse using Ge synaptic transistors and GaAs photodetectors
SK Kim, DM Geum, HR Lim, JH Han, H Kim, YJ Jeong, SH Kim
IEEE Electron Device Letters 41 (4), 605-608, 2020
152020
Impact of bottom-gate biasing on implant-free junctionless Ge-on-insulator n-MOSFETs
HR Lim, SK Kim, JH Han, H Kim, DM Geum, YJ Lee, BK Ju, HJ Kim, S Kim
IEEE Electron Device Letters 40 (9), 1362-1365, 2019
102019
Improved characteristics of MOS interface between In0. 53Ga0. 47As and insulator by H2 annealing with Pt gate electrode
SK Kim, DM Geum, HR Lim, H Kim, JH Han, DK Hwang, JD Song, H Kim, ...
Applied Physics Letters 115 (14), 2019
82019
Low-temperature material stacking of ultrathin body Ge (110)-on-insulator structure via wafer bonding and epitaxial liftoff from III–V templates
JP Shim, HS Kim, G Ju, HR Lim, SK Kim, JH Han, HJ Kim, SH Kim
IEEE Transactions on Electron Devices 65 (3), 1253-1257, 2018
82018
Low-loss and high-confinement photonic platform based on germanium-on-insulator at mid-infrared range for optical sensing
J Lim, J Shim, I Kim, SK Kim, H Lim, SY Ahn, J Park, DM Geum, SH Kim
Journal of Lightwave Technology, 2023
42023
Heterogeneous 3D sequential CFET with Ge (110) nanosheet p-FET on Si (100) bulk n-FET by direct wafer bonding
SK Kim, HR Lim, J Jeong, SW Lee, JP Kim, J Jeong, BH Kim, SY Ahn, ...
2022 International Electron Devices Meeting (IEDM), 20.1. 1-20.1. 4, 2022
32022
Heterogeneous integration toward monolithic 3D chip
SH Kim, SK Kim, JP Shim, D Geum, G Ju, HS Kim, HJ Lim, HR Lim, ...
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2017
22017
Supporting document: Low-loss and high-confinement photonic platform based on germanium-on-insulator at mid-infrared range for optical sensing
J Lim, J Shim, I Kim, SK Kim, H Lim, S Ahn, J Park, DM Geum, SH Kim
figshare, 2022
12022
Role of Inter-Layer Dielectric on the Electrical and Heat Dissipation Characteristics in the Heterogeneous 3D Sequential CFETs with Ge p-FETs on Si n-FETs
SK Kim, HR Lim, J Shim, W Baek, S Kim, Y Park, J Jeong, J Lim, JP Kim, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
2023
Heterogeneous 3-D Sequential CFETs With Ge (110) Nanosheet p-FETs on Si (100) Bulk n-FETs
SK Kim, HR Lim, J Jeong, SW Lee, HJ Jeong, J Park, JP Kim, J Jeong, ...
IEEE Transactions on Electron Devices, 2023
2023
Biochemical spectroscopy based on germanium-on-insulator platform for mid-infrared optical sensor
J Lim, J Shim, I Kim, SK Kim, H Lim, SY Ahn, J Park, DM Geum, SH Kim
2022 International Electron Devices Meeting (IEDM), 24.1. 1-24.1. 4, 2022
2022
Low-loss Germanium-on-insulator passive waveguides for mid-infrared photonics platform
J Lim, J Shim, SK Kim, H Lim, SW Lee, DM Geum, SH Kim
Optical Sensors, SM4E. 5, 2022
2022
Hybrid 3D Sequential CFET with Ge (110) Nanosheet p-FET on Si (100) bulk n-FET by Direct Wafer Bonding
SK Kim, HR Lim, J Jeong, SW Lee, JP Kim, J Jeong, BH Kim, DM Geum, ...
68th IEEE International Electron Devices Meeting, IEDM 2022, 2022
2022
Electrical characterization of wafer-bonded interfaces of p+ InGaAs/n+ InGaAs and p+ GaAs/n+ InGaAs
DM Geum, S Kim, H Lim, J Park, J Jeong, JH Han, WJ Choi, H Kim, S Kim
Global Photovoltaic Conference 2021, 2021
2021
Electrical Analysis for Wafer-Bonded Interfaces of p+GaAs/n+InGaAs and p+InGaAs/n+InGaAs
DM Geum, SK Kim, HR Lim, J Park, J Jeong, JH Han, WJ Choi, HJ Kim, ...
IEEE Electron Device Letters 42 (6), 800-803, 2021
2021
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