GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance PK Kandaswamy, F Guillot, E Bellet-Amalric, E Monroy, L Nevou, ...
Journal of Applied Physics 104 (9), 093501, 2008
210 2008 Quantum Hall resistance standard in graphene devices under relaxed experimental conditions R Ribeiro-Palau, F Lafont, J Brun-Picard, D Kazazis, A Michon, F Cheynis, ...
Nature nanotechnology 10 (11), 965-971, 2015
111 2015 Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition A Michon, S Vézian, A Ouerghi, M Zielinski, T Chassagne, M Portail
Applied Physics Letters 97 (17), 171909, 2010
82 2010 Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide F Lafont, R Ribeiro-Palau, D Kazazis, A Michon, O Couturaud, C Consejo, ...
Nature communications 6 (1), 1-9, 2015
71 2015 Sharp interface in epitaxial graphene layers on 3 C-SiC (100)/Si (100) wafers A Ouerghi, M Ridene, A Balan, R Belkhou, A Barbier, N Gogneau, ...
Physical Review B 83 (20), 205429, 2011
50 2011 Effects of pressure, temperature, and hydrogen during graphene growth on SiC (0001) using propane-hydrogen chemical vapor deposition A Michon, S Vézian, E Roudon, D Lefebvre, M Zielinski, T Chassagne, ...
Journal of Applied Physics 113 (20), 203501, 2013
42 2013 A Michon, G Saint-Girons, G Beaudoin, I Sagnes, L Largeau, G Patriarche
Applied Physics Letters 87 (25), 253114, 2005
40 2005 Graphene integration with nitride semiconductors for high power and high frequency electronics F Giannazzo, G Fisichella, G Greco, A La Magna, F Roccaforte, B Pecz, ...
physica status solidi (a) 214 (4), 1600460, 2017
38 2017 Single InAs 1− x P x/InP quantum dots as telecommunications-band photon sources D Elvira, R Hostein, B Fain, L Monniello, A Michon, G Beaudoin, R Braive, ...
Physical Review B 84 (19), 195302, 2011
35 2011 Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC M Portail, A Michon, S Vézian, D Lefebvre, S Chenot, E Roudon, ...
Journal of crystal growth 349 (1), 27-35, 2012
34 2012 Time-resolved characterization of R Hostein, A Michon, G Beaudoin, N Gogneau, G Patriache, JY Marzin, ...
Applied physics letters 93 (7), 073106, 2008
33 2008 Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing M Nemoz, R Dagher, S Matta, A Michon, P Vennéguès, J Brault
Journal of Crystal Growth 461, 10-15, 2017
31 2017 Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect of in situ hydrogenation and annealing B Jabakhanji, A Michon, C Consejo, W Desrat, M Portail, A Tiberj, ...
Physical Review B 89 (8), 085422, 2014
30 2014 Metal organic vapor phase epitaxy of InAsP/InP(001) quantum dots for A Michon, R Hostein, G Patriarche, N Gogneau, G Beaudoin, A Beveratos, ...
Journal of Applied Physics 104 (4), 043504, 2008
30 2008 Thermal management for high-power single-frequency tunable diode-pumped VECSEL emitting in the near-and Mid-IR M Devautour, A Michon, G Beaudoin, I Sagnes, L Cerutti, A Garnache
IEEE Journal of Selected Topics in Quantum Electronics 19 (4), 1701108-1701108, 2013
25 2013 Microphotoluminescence of exciton and biexciton around G Saint-Girons, N Chauvin, A Michon, G Patriarche, G Beaudoin, ...
Applied physics letters 88 (13), 133101, 2006
25 2006 Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon M Zielinski, JF Michaud, S Jiao, T Chassagne, AE Bazin, A Michon, ...
Journal of Applied Physics 111 (5), 053507, 2012
21 2012 Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition A Michon, A Tiberj, S Vezian, E Roudon, D Lefebvre, M Portail, M Zielinski, ...
Applied Physics Letters 104 (7), 071912, 2014
20 2014 Magnetoresistance of disordered graphene: From low to high temperatures B Jabakhanji, D Kazazis, W Desrat, A Michon, M Portail, B Jouault
Physical Review B 90 (3), 035423, 2014
19 2014 Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near D Elvira, A Michon, B Fain, G Patriarche, G Beaudoin, I Robert-Philip, ...
Applied Physics Letters 97 (13), 131907, 2010
19 2010 
Dimitris KazazisPaul Scherrer InstitutBestätigte E-Mail-Adresse bei psi.ch
