| The effect of gate oxide processes on the performance of 4H-SiC MOSFETs and gate-controlled diodes Y Wang, K Tang, T Khan, MK Balasubramanian, H Naik, W Wang, ... IEEE transactions on electron devices 55 (8), 2046-2053, 2008 | 64 | 2008 |
| Diode structures with controlled injection efficiency for fast switching M Bobde, H Naik, L Guan, A Bhalla, S Lui US Patent 8,933,506, 2015 | 44 | 2015 |
| Study of mobility limiting mechanisms in (0001) 4H and 6H-SiC MOSFETs H Naik, TP Chow Materials Science Forum 679, 595-598, 2011 | 21 | 2011 |
| Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs H Naik, K Tang, TP Chow Materials Science Forum 615, 773-776, 2009 | 21 | 2009 |
| 4H-SiC MOS capacitors and MOSFET fabrication with gate oxidation at 1400 C H Naik, TP Chow Materials Science Forum 778, 607-610, 2014 | 18 | 2014 |
| S4-P7: Low-temperature hydrophobic wafer bonding for 1200V, 25A bi-directional Si UMOS IGBTs JW Wu, S Chowdhury, H Naik, J Picard, N Lee, C Hitchcock, JJQ Lu, ... 2014 Lester Eastman Conference on High Performance Devices (LEC), 1-4, 2014 | 17 | 2014 |
| Diode structures with controlled injection efficiency for fast switching M Bobde, H Naik, L Guan, A Bhalla, S Lui US Patent 9,685,523, 2017 | 16 | 2017 |
| Comparative study of 4H‐SiC and 2H‐GaN MOS capacitors and FETs TP Chow, H Naik, Z Li physica status solidi (a) 206 (10), 2478-2486, 2009 | 13 | 2009 |
| Comparison of 4H-SiC MOSFETs on (0001),(000-1) and (11-20) Oriented Substrates H Naik, TP Chow, J Fronheiser, K Tang, T Marron Materials Science Forum 615, 785-788, 2009 | 12 | 2009 |
| Modeling of high voltage 4H-SiC JFETs and MOSFETs for power electronics applications Y Wang, C Cass, K Tang, H Naik, TP Chow, D Boroyevich, F Wang 2008 IEEE Power Electronics Specialists Conference, 4758-4761, 2008 | 12 | 2008 |
| Design of GaN and SiC 5–20kV vertical superjunction structures Z Li, H Naik, TP Chow 2012 Lester Eastman Conference on High Performance Devices (LEC), 1-4, 2012 | 9 | 2012 |
| Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereof C Ouvrard, A Amali, O Blank, M Hutzler, D Laforet, H Naik, R Siemieniec, ... US Patent 10,727,331, 2020 | 6 | 2020 |
| Vertical FET having reduced on-resistance H Naik, TD Henson, N Ranjan US Patent 9,590,096, 2017 | 5 | 2017 |
| Improved analytical expressions for avalanche breakdown in 4H-SiC Z Stum, Y Tang, H Naik, TP Chow Materials Science Forum 778, 467-470, 2014 | 5 | 2014 |
| Modeling and experimental study of MOS channel mobility of etched GaN on silicon substrate Z Li, H Naik, TP Chow physica status solidi c 8 (7‐8), 2433-2435, 2011 | 4 | 2011 |
| Experimental Identification of Extra Type of Charges at SiO2/SiC Interface in 4H-SiC H Naik, TP Chow, Z Li Materials Science Forum 645, 519-522, 2010 | 3 | 2010 |
| Experimental study on current collapse of GaN MOSFETs, HEMTs and MOS-HEMTs Z Li, T Marron, H Naik, W Huang, TP Chow 2010 22nd International Symposium on Power Semiconductor Devices & IC's …, 2010 | 3 | 2010 |
| Study of electrical properties of 4H-SiC/SiO2 interface H Naik Rensselaer Theses and Dissertations Online Collection, 2013 | 2 | 2013 |
| Design, yield and process capability study of 8 kV 4H-SiC PIN diodes A Bolotnikov, PA Losee, K Matocha, J Nasadoski, J Glaser, S Arthur, ... Materials Science Forum 717, 953-956, 2012 | 2 | 2012 |
| Cryogenic operation of GaN Schottky rectifiers H NAIK, TOM MARRON, TP CHOW International Journal of High Speed Electronics and Systems 20 (03), 457-461, 2011 | 2 | 2011 |
T. Paul ChowProfessor, Rensselaer Polytechnic InstituteBestätigte E-Mail-Adresse bei rpi.edu
