| High mobility WSe2 p-and n-type field effect transistors contacted by highly doped graphene for low-resistance contacts HJ Chuang, X Tan, NJ Ghimire, MM Perera, B Chamlagain, MMC Cheng, ... Nano letters, 2014 | 481 | 2014 |
| Low-resistance 2D/2D ohmic contacts: A universal approach to high-performance WSe2, MoS2, and MoSe2 transistors HJ Chuang, B Chamlagain, M Koehler, MM Perera, J Yan, D Mandrus, ... Nano letters, 2016 | 403 | 2016 |
| Improved carrier mobility in few-layer MoS2 field-effect transistors with ionic-liquid gating MM Perera, MW Lin, HJ Chuang, BP Chamlagain, C Wang, X Tan, ... ACS Nano, 2013 | 375 | 2013 |
| Polarized photocurrent response in black phosphorus field-effect transistors T Hong, B Chamlagain, W Lin, HJ Chuang, M Pan, Z Zhou, YQ Xu Nanoscale 6 (15), 8978-8983, 2014 | 357 | 2014 |
| Mobility improvement and temperature dependence in MoSe2 field-effect transistors on parylene-C substrate B Chamlagain, Q Li, NJ Ghimire, HJ Chuang, MM Perera, H Tu, Y Xu, ... ACS Nano, 2014 | 224 | 2014 |
| Double Indirect Interlayer Exciton in a MoSe2/WSe2 van der Waals Heterostructure AT Hanbicki*, HJ Chuang*, MR Rosenberger, CS Hellberg, SV Sivaram, ... ACS Nano, 2018 | 181 | 2018 |
| Twist Angle-Dependent Atomic Reconstruction and Moiré Patterns in Transition Metal Dichalcogenide Heterostructures MR Rosenberger, HJ Chuang, M Phillips, VP Oleshko, KM McCreary, ... ACS nano 14 (4), 4550-4558, 2020 | 177 | 2020 |
| Anisotropic photocurrent response at black phosphorus–MoS 2 p–n heterojunctions T Hong, B Chamlagain, T Wang, HJ Chuang, Z Zhou, YQ Xu Nanoscale 7 (44), 18537-18541, 2015 | 136 | 2015 |
| Nano-“squeegee” for the creation of clean 2D material interfaces MR Rosenberger, HJ Chuang, KM McCreary, AT Hanbicki, SV Sivaram, ... ACS applied materials & interfaces 10 (12), 10379-10387, 2018 | 134 | 2018 |
| Electrical Characterization of Discrete Defects and Impact of Defect Density on Photoluminescence in Monolayer WS2 MR Rosenberger, HJ Chuang, KM McCreary, CH Li, BT Jonker ACS nano 12 (2), 1793-1800, 2018 | 114 | 2018 |
| Quantum calligraphy: writing single-photon emitters in a two-dimensional materials platform MR Rosenberger, CK Dass, HJ Chuang, SV Sivaram, KM McCreary, ... ACS nano 13 (1), 904-912, 2019 | 93 | 2019 |
| Understanding Variations in Circularly Polarized Photoluminescence in Monolayer Transition Metal Dichalcogenides KM McCreary, M Currie, AT Hanbicki, HJ Chuang, BT Jonker. ACS Nano, 2017 | 58 | 2017 |
| Edge effects on the pH response of graphene nanoribbon field effect transistors X Tan, HJ Chuang, MW Lin, Z Zhou, MMC Cheng The Journal of Physical Chemistry C 117 (51), 27155-27160, 2013 | 58 | 2013 |
| Spatially Selective Enhancement of Photoluminescence in MoS2 by Exciton-Mediated Adsorption and Defect Passivation SV Sivaram, AT Hanbicki, MR Rosenberger, GG Jernigan, HJ Chuang, ... ACS applied materials & interfaces 11 (17), 16147-16155, 2019 | 50 | 2019 |
| Continuous wave sum frequency generation and imaging of monolayer and heterobilayer two-dimensional semiconductors K Yao, E Yanev, HJ Chuang, MR Rosenberger, X Xu, T Darlington, ... ACS nano 14 (1), 708-714, 2019 | 49 | 2019 |
| Substitutional Electron and Hole Doping of WSe 2 : Synthesis, Electrical Characterization, and Observation of Band-to-Band Tunneling R Mukherjee, HJ Chuang, MR Koehler, N Combs, A Patchen, ZX Zhou, ... Physical Review Applied 7 (3), 034011, 2017 | 45 | 2017 |
| Chemical identification of interlayer contaminants within van der Waals heterostructures JJ Schwartz, HJ Chuang, MR Rosenberger, SV Sivaram, KM McCreary, ... ACS applied materials & interfaces 11 (28), 25578-25585, 2019 | 42 | 2019 |
| Optimizing Charge Injection across Transition Metal Dichalcogenide Heterojunctions: Theory and Experiment J Guan, HJ Chuang, Z Zhou, D Tomanek ACS Nano, 2017 | 35 | 2017 |
| Prominent room temperature valley polarization in WS2/graphene heterostructures grown by chemical vapor deposition I Paradisanos, KM McCreary, D Adinehloo, L Mouchliadis, JT Robinson, ... Applied Physics Letters 116 (20), 2020 | 30 | 2020 |
| Ultrathin and atomically flat transition-metal oxide: Promising building blocks for metal–insulator electronics Q Cui, M Sakhdari, B Chamlagain, HJ Chuang, Y Liu, MMC Cheng, ... ACS Applied Materials & Interfaces 8 (50), 34552-34558, 2016 | 21 | 2016 |
Kathleen M. McCrearyNaval Research LabsVerified email at nrl.navy.mil
