John F. Klem
John F. Klem
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Zitiert von
Zitiert von
Comprehensive analysis of Si-doped (): Theory and experiments
N Chand, T Henderson, J Klem, WT Masselink, R Fischer, YC Chang, ...
Physical Review B 30 (8), 4481, 1984
Comprehensive analysis of Si-doped (): Theory and experiments
N Chand, T Henderson, J Klem, WT Masselink, R Fischer, YC Chang, ...
Physical Review B 30 (8), 4481, 1984
Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 µm
KD Choquette, JF Klem, AJ Fischer, O Blum, AA Allerman, IJ Fritz, ...
Electronics Letters 36 (16), 1388-1390, 2000
Time-resolved Raman scattering in GaAs quantum wells
DY Oberli, DR Wake, MV Klein, J Klem, T Henderson, H Morkoc
Physical review letters 59 (6), 696, 1987
Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy
R Fischer, WT Masselink, J Klem, T Henderson, TC McGlinn, MV Klein, ...
Journal of Applied Physics 58 (1), 374-381, 1985
Absorption coefficients and exciton oscillator strengths in AlGaAs-GaAs superlattices
WT Masselink, PJ Pearah, J Klem, CK Peng, H Morkoc, GD Sanders, ...
Physical Review B 32 (12), 8027, 1985
InGaAsN/GaAs heterojunction for multi-junction solar cells
SR Kurtz, AA Allerman, JF Klem, ED Jones
US Patent 6,252,287, 2001
Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice
BV Olson, EA Shaner, JK Kim, JF Klem, SD Hawkins, LM Murray, ...
Applied Physics Letters 101 (9), 092109, 2012
Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors
AA Ketterson, WT Masselink, JS Gedymin, J Klem, CK Peng, WF Kopp, ...
IEEE transactions on electron devices 33 (5), 564-571, 1986
Ordering in GaAs1−xSbx grown by molecular beam epitaxy
YE Ihm, N Otsuka, J Klem, H Morkoc
Applied physics letters 51 (24), 2013-2015, 1987
Phased-array sources based on nonlinear metamaterial nanocavities
O Wolf, S Campione, A Benz, AP Ravikumar, S Liu, TS Luk, EA Kadlec, ...
Nature communications 6 (1), 1-6, 2015
Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) silicon
R Fischer, T Henderson, J Klem, WT Masselink, W Kopp, H Morkoc, ...
Electronics Letters 20 (22), 945-947, 1984
Optical properties of GaAs on (100) Si using molecular beam epitaxy
WT Masselink, T Henderson, J Klem, R Fischer, P Pearah, H Morkoc, ...
Applied physics letters 45 (12), 1309-1311, 1984
OC-48 capable InGaAsN vertical cavity lasers
AW Jackson, RL Naone, MJ Dalberth, JM Smith, KJ Malone, DW Kisker, ...
Electronics Letters 37 (6), 355-356, 2001
Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures
R Fischer, J Klem, TJ Drummond, RE Thorne, W Kopp, H Morkoc, AY Cho
Journal of Applied Physics 54 (5), 2508-2510, 1983
Conductance modulation in double quantum wells due to magnetic field-induced anticrossing
JA Simmons, SK Lyo, NE Harff, JF Klem
Physical review letters 73 (16), 2256, 1994
Use of a superlattice to enhance the interface properties between two bulk heterolayers
TJ Drummond, J Klem, D Arnold, R Fischer, RE Thorne, WG Lyons, ...
Applied Physics Letters 42 (7), 615-617, 1983
Strong coupling in the sub-wavelength limit using metamaterial nanocavities
A Benz, S Campione, S Liu, I Montano, JF Klem, A Allerman, JR Wendt, ...
Nature communications 4 (1), 1-8, 2013
Interband-cascade infrared photodetectors with superlattice absorbers
RQ Yang, Z Tian, Z Cai, JF Klem, MB Johnson, HC Liu
Journal of Applied Physics 107 (5), 054514, 2010
Electron heating in a multiple-quantum-well structure below 1 K
AKM Wennberg, SN Ytterboe, CM Gould, HM Bozler, J Klem, H Morkoc
Physical Review B 34 (6), 4409, 1986
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