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Roberto Lacerda de Orio
Roberto Lacerda de Orio
Institute for Microelectronics, TU Wien
Bestätigte E-Mail-Adresse bei iue.tuwien.ac.at - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Physically based models of electromigration: From Black’s equation to modern TCAD models
RL De Orio, H Ceric, S Selberherr
Microelectronics Reliability 50 (6), 775-789, 2010
1852010
A comprehensive TCAD approach for assessing electromigration reliability of modern interconnects
H Ceric, RL de Orio, J Cervenka, S Selberherr
IEEE Transactions on Device and Materials Reliability 9 (1), 9-19, 2008
642008
Electromigration failure in a copper dual-damascene structure with a through silicon via
RL de Orio, H Ceric, S Selberherr
Microelectronics Reliability 52 (9-10), 1981-1986, 2012
372012
A compact model for early electromigration failures of copper dual-damascene interconnects
RL De Orio, H Ceric, S Selberherr
Microelectronics Reliability 51 (9-11), 1573-1577, 2011
312011
Electromigration modeling and simulation
RL De Orio
na, 2010
292010
Spin and charge drift-diffusion in ultra-scaled MRAM cells
S Fiorentini, M Bendra, J Ender, RL de Orio, W Goes, S Selberherr, ...
Scientific Reports 12 (1), 20958, 2022
252022
Coupled spin and charge drift-diffusion approach applied to magnetic tunnel junctions
S Fiorentini, J Ender, S Selberherr, RL de Orio, W Goes, V Sverdlov
Solid-State Electronics 186, 108103, 2021
242021
Robust magnetic field-free switching of a perpendicularly magnetized free layer for SOT-MRAM
RL de Orio, A Makarov, S Selberherr, W Goes, J Ender, S Fiorentini, ...
Solid-State Electronics 168, 107730, 2020
182020
Optimization of a spin-orbit torque switching scheme based on micromagnetic simulations and reinforcement learning
RL de Orio, J Ender, S Fiorentini, W Goes, S Selberherr, V Sverdlov
Micromachines 12 (4), 443, 2021
152021
Modeling methods for analysis of electromigration degradation in nano-interconnects
H Ceric, S Selberherr, H Zahedmanesh, RL de Orio, K Croes
ECS Journal of Solid State Science and Technology 10 (3), 035003, 2021
142021
Numerical analysis of deterministic switching of a perpendicularly magnetized spin-orbit torque memory cell
RL de Orio, J Ender, S Fiorentini, W Goes, S Selberherr, V Sverdlov
IEEE Journal of the Electron Devices Society 9, 61-67, 2020
112020
Finite element approach for the simulation of modern MRAM devices
S Fiorentini, NP Jørstad, J Ender, RL de Orio, S Selberherr, M Bendra, ...
Micromachines 14 (5), 898, 2023
102023
Temperature increase in STT-MRAM at writing: A fully three-dimensional finite element approach
T Hadámek, S Fiorentini, M Bendra, J Ender, RL de Orio, W Gös, ...
Solid-State Electronics 193, 108269, 2022
102022
Coupled simulation to determine the impact of across wafer variations in oxide PECVD on electrical and reliability parameters of through-silicon vias
E Baer, P Evanschitzky, J Lorenz, F Roger, R Minixhofer, L Filipovic, ...
Microelectronic Engineering 137, 141-145, 2015
102015
The effect of copper grain size statistics on the electromigration lifetime distribution
RL de Orio, H Ceric, J Cervenka, S Selberherr
2009 International Conference on Simulation of Semiconductor Processes and …, 2009
102009
Two-pulse magnetic field-free switching scheme for perpendicular SOT-MRAM with a symmetric square free layer
RL De Orio, A Makarov, W Goes, J Ender, S Fiorentini, V Sverdlov
Physica B: Condensed Matter 578, 411743, 2020
92020
Electromigration-induced void evolution and failure of Cu/SiCN hybrid bonds
H Ceric, H Zahedmanesh, K Croes, R Lacerda de Orio, S Selberherr
Journal of Applied Physics 133 (10), 2023
72023
Effects of sidewall scallops on the performance and reliability of filled copper and open tungsten TSVs
L Filipovic, RL de Orio, S Selberherr
Proceedings of the 21th International Symposium on the Physical and Failure …, 2014
72014
Interconnect reliability dependence on fast diffusivity paths
H Ceric, RL de Orio, S Selberherr
Microelectronics Reliability 52 (8), 1532-1538, 2012
72012
Effect of strains on anisotropic material transport in copper interconnect structures under electromigration stress
RL de Orio, H Ceric, S Selberherr
Journal of Computational Electronics 7 (3), 128-131, 2008
72008
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