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Roberto Lacerda de Orio
Roberto Lacerda de Orio
Institute for Microelectronics, TU Wien
Verified email at iue.tuwien.ac.at - Homepage
Title
Cited by
Cited by
Year
Physically based models of electromigration: From Black’s equation to modern TCAD models
RL De Orio, H Ceric, S Selberherr
Microelectronics Reliability 50 (6), 775-789, 2010
1792010
A comprehensive TCAD approach for assessing electromigration reliability of modern interconnects
H Ceric, RL de Orio, J Cervenka, S Selberherr
IEEE Transactions on Device and Materials Reliability 9 (1), 9-19, 2008
612008
Electromigration failure in a copper dual-damascene structure with a through silicon via
RL de Orio, H Ceric, S Selberherr
Microelectronics Reliability 52 (9-10), 1981-1986, 2012
372012
A compact model for early electromigration failures of copper dual-damascene interconnects
RL De Orio, H Ceric, S Selberherr
Microelectronics Reliability 51 (9-11), 1573-1577, 2011
282011
Electromigration modeling and simulation
RL De Orio
na, 2010
282010
Coupled spin and charge drift-diffusion approach applied to magnetic tunnel junctions
S Fiorentini, J Ender, S Selberherr, RL de Orio, W Goes, V Sverdlov
Solid-State Electronics 186, 108103, 2021
202021
Robust magnetic field-free switching of a perpendicularly magnetized free layer for SOT-MRAM
RL de Orio, A Makarov, S Selberherr, W Goes, J Ender, S Fiorentini, ...
Solid-State Electronics 168, 107730, 2020
162020
Spin and charge drift-diffusion in ultra-scaled MRAM cells
S Fiorentini, M Bendra, J Ender, RL de Orio, W Goes, S Selberherr, ...
Scientific Reports 12 (1), 20958, 2022
132022
Optimization of a spin-orbit torque switching scheme based on micromagnetic simulations and reinforcement learning
RL de Orio, J Ender, S Fiorentini, W Goes, S Selberherr, V Sverdlov
Micromachines 12 (4), 443, 2021
132021
Modeling methods for analysis of electromigration degradation in nano-interconnects
H Ceric, S Selberherr, H Zahedmanesh, RL de Orio, K Croes
ECS Journal of Solid State Science and Technology 10 (3), 035003, 2021
112021
The effect of copper grain size statistics on the electromigration lifetime distribution
RL de Orio, H Ceric, J Cervenka, S Selberherr
2009 International Conference on Simulation of Semiconductor Processes and …, 2009
102009
Numerical analysis of deterministic switching of a perpendicularly magnetized spin-orbit torque memory cell
RL de Orio, J Ender, S Fiorentini, W Goes, S Selberherr, V Sverdlov
IEEE Journal of the Electron Devices Society 9, 61-67, 2020
92020
Coupled simulation to determine the impact of across wafer variations in oxide PECVD on electrical and reliability parameters of through-silicon vias
E Baer, P Evanschitzky, J Lorenz, F Roger, R Minixhofer, L Filipovic, ...
Microelectronic Engineering 137, 141-145, 2015
92015
Two-pulse magnetic field-free switching scheme for perpendicular SOT-MRAM with a symmetric square free layer
RL De Orio, A Makarov, W Goes, J Ender, S Fiorentini, V Sverdlov
Physica B: Condensed Matter 578, 411743, 2020
82020
Temperature increase in STT-MRAM at writing: A fully three-dimensional finite element approach
T Hadámek, S Fiorentini, M Bendra, J Ender, RL de Orio, W Goes, ...
Solid-State Electronics 193, 108269, 2022
72022
Effects of sidewall scallops on the performance and reliability of filled copper and open tungsten TSVs
L Filipovic, RL de Orio, S Selberherr
Proceedings of the 21th International Symposium on the Physical and Failure …, 2014
72014
Effect of strains on anisotropic material transport in copper interconnect structures under electromigration stress
RL de Orio, H Ceric, S Selberherr
Journal of Computational Electronics 7 (3), 128-131, 2008
72008
On the material depletion rate due to electromigration in a copper TSV structure
RL de Orio, S Gousseau, S Moreau, H Cerice, S Selberherr, A Farcy, ...
2014 IEEE International Integrated Reliability Workshop Final Report (IIRW …, 2014
62014
Interconnect reliability dependence on fast diffusivity paths
H Ceric, RL de Orio, S Selberherr
Microelectronics Reliability 52 (8), 1532-1538, 2012
62012
Finite Element Approach for the Simulation of Modern MRAM Devices
S Fiorentini, NP Jørstad, J Ender, RL de Orio, S Selberherr, M Bendra, ...
Micromachines 14 (5), 898, 2023
52023
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