Martin Salinga
Martin Salinga
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Zitiert von
Zitiert von
Phase-change random access memory: A scalable technology
S Raoux, GW Burr, MJ Breitwisch, CT Rettner, YC Chen, RM Shelby, ...
IBM Journal of Research and Development 52 (4.5), 465-479, 2008
A map for phase-change materials
D Lencer, M Salinga, B Grabowski, T Hickel, J Neugebauer, M Wuttig
Nature materials 7 (12), 972-977, 2008
Design Rules for Phase‐Change Materials in Data Storage Applications
D Lencer, M Salinga, M Wuttig
Advanced Materials 23 (18), 2030-2058, 2011
Nanosecond switching in GeTe phase change memory cells
G Bruns, P Merkelbach, C Schlockermann, M Salinga, M Wuttig, TD Happ, ...
Applied physics letters 95 (4), 043108, 2009
Ultra-thin phase-change bridge memory device using GeSb
YC Chen, CT Rettner, S Raoux, GW Burr, SH Chen, RM Shelby, ...
2006 International Electron Devices Meeting, 1-4, 2006
Using low-loss phase-change materials for mid-infrared antenna resonance tuning
AKU Michel, DN Chigrin, TWW Maß, K Schönauer, M Salinga, M Wuttig, ...
Nano letters 13 (8), 3470-3475, 2013
Physics of the switching kinetics in resistive memories
S Menzel, U Böttger, M Wimmer, M Salinga
Advanced functional materials 25 (40), 6306-6325, 2015
Measurement of crystal growth velocity in a melt-quenched phase-change material
M Salinga, E Carria, A Kaldenbach, M Bornhöfft, J Benke, J Mayer, ...
Nature communications 4 (1), 1-8, 2013
Threshold field of phase change memory materials measured using phase change bridge devices
D Krebs, S Raoux, CT Rettner, GW Burr, M Salinga, M Wuttig
Applied Physics Letters 95 (8), 082101, 2009
Phase change materials and their application to random access memory technology
S Raoux, RM Shelby, J Jordan-Sweet, B Munoz, M Salinga, YC Chen, ...
Microelectronic Engineering 85 (12), 2330-2333, 2008
Monatomic phase change memory
M Salinga, B Kersting, I Ronneberger, VP Jonnalagadda, XT Vu, ...
Nature materials 17 (8), 681-685, 2018
Phase-change memories on a diet
M Salinga, M Wuttig
science 332 (6029), 543-544, 2011
Nanosecond threshold switching of GeTe6 cells and their potential as selector devices
M Anbarasu, M Wimmer, G Bruns, M Salinga, M Wuttig
Applied Physics Letters 100 (14), 143505, 2012
Effect of Al and Cu doping on the crystallization properties of the phase change materials SbTe and GeSb
S Raoux, M Salinga, JL Jordan-Sweet, A Kellock
Journal of applied physics 101 (4), 044909, 2007
Phase transitions in Ge–Sb phase change materials
S Raoux, C Cabral Jr, L Krusin-Elbaum, JL Jordan-Sweet, K Virwani, ...
Journal of Applied Physics 105 (6), 064918, 2009
Nonvolatile memory concepts based on resistive switching in inorganic materials
T Mikolajick, M Salinga, M Kund, T Kever
Advanced engineering materials 11 (4), 235-240, 2009
How fragility makes phase-change data storage robust: insights from ab initio simulations
W Zhang, I Ronneberger, P Zalden, M Xu, M Salinga, M Wuttig, ...
Scientific reports 4 (1), 1-6, 2014
Function by defects at the atomic scale–New concepts for non-volatile memories
R Waser, R Dittmann, M Salinga, M Wuttig
Solid-state electronics 54 (9), 830-840, 2010
Picosecond electric-field-induced threshold switching in phase-change materials
P Zalden, MJ Shu, F Chen, X Wu, Y Zhu, H Wen, S Johnston, ZX Shen, ...
Physical review letters 117 (6), 067601, 2016
Analysis of Transient Currents During Ultrafast Switching ofNanocrossbar Devices
C Hermes, M Wimmer, S Menzel, K Fleck, G Bruns, M Salinga, U Bottger, ...
IEEE electron device letters 32 (8), 1116-1118, 2011
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