| Manufacturing of high aspect-ratio pn junctions using Vapor Phase Doping for application in multi-Resurf devices C Rochefort, R Van Dalen, N Duhayon, W Vandervorst Proceedings of the 14th International Symposium on Power Semiconductor …, 2002 | 238 | 2002 |
| Split-gate Resurf Stepped Oxide (RSO) MOSFETs for 25V applications with record low gate-to-drain charge P Goarin, GEJ Koops, R Van Dalen, C Le Cam, J Saby Proceedings of the 19th International Symposium on Power Semiconductor …, 2007 | 114 | 2007 |
| Semiconductor device having a plurality of resistive paths GAM Hurkx, R Van Dalen US Patent 6,436,779, 2002 | 76 | 2002 |
| Industrialisation of resurf stepped oxide technology for power transistors MA Gajda, SW Hodgskiss, LA Mounfield, NT Irwin, GEJ Koops, ... 2006 IEEE International Symposium on Power Semiconductor Devices and IC's, 1-4, 2006 | 71 | 2006 |
| Semiconductor device R Van Dalen US Patent 20010050375A1, 2001 | 62* | 2001 |
| Short period oscillation of the interlayer exchange coupling in the ferromagnetic regime in Co/Cu/Co (100) PJH Bloemen, R Van Dalen, WJM De Jonge, MT Johnson, ... Journal of applied physics 73 (10), 5972-5974, 1993 | 53 | 1993 |
| Indoor/outdoor detection R Van Dalen, SM Oncala US Patent 8,592,744, 2013 | 50 | 2013 |
| Insulated gate field effect device GAM Hurkx, R Van Dalen US Patent 6,462,377, 2002 | 44 | 2002 |
| Trench semiconductor devices R Van Dalen, C Rochefort, GAM Hurkx US Patent 6,605,862, 2003 | 40 | 2003 |
| Field-effect semiconductor devices RJE Hueting, EA Hijzen, R Van Dalen US Patent 6,600,194, 2003 | 40 | 2003 |
| Semiconductor device with voltage sustaining zone GAM Hurkx, R Van Dalen US Patent 6,624,472, 2003 | 32 | 2003 |
| Quantum-and transport electron mobility in the individual subbands of a two-dimensional electron gas in Si-δ-doped GaAs PM Koenraad, BFA Van Hest, FAP Blom, R Van Dalen, M Leys, ... Physica B: Condensed Matter 177 (1-4), 485-490, 1992 | 30 | 1992 |
| Power semiconductor device structure for integrated circuit and method of fabrication thereof J Sonsky, G Koops, R Van Dalen US Patent App. 12/294,820, 2010 | 26 | 2010 |
| Light sensor with intensity and direction detection V Souchkov, R Van Dalen, P O'mathuna US Patent 8,264,678, 2012 | 24 | 2012 |
| General rules for constructing valence band effective mass Hamiltonians with correct operator order for heterostructures with arbitrary orientations R van Dalen, PN Stavrinou Semiconductor science and technology 13 (1), 11, 1998 | 24 | 1998 |
| Operator ordering and boundary conditions for valence-band modeling: application to [110] heterostructures PN Stavrinou, R van Dalen Physical Review B 55 (23), 15456, 1997 | 23 | 1997 |
| Lateral semiconductor device for withstanding high reverse biasing voltages R Van Dalen US Patent 6,445,019, 2002 | 22 | 2002 |
| Electrical characterisation of vertical vapor phase doped (VPD) RESURF MOSFETs Rochefort 2004 Proceedings of the 16th International Symposium on Power Semiconductor …, 2004 | 21 | 2004 |
| Edge termination for semiconductor device R Van Dalen, MJ Swanenberg US Patent 7,859,076, 2010 | 18 | 2010 |
| Power trench MOSFETs with very low specific on-resistance for 25V applications P Goarin, R van Dalen, G Koops, C Le Cam Solid-State Electronics 51 (11-12), 1589-1595, 2007 | 18 | 2007 |
Koops GerhardVerified email at onsemi.com
