| Comprehensive understanding of the HZO-based n/pFeFET operation and device performance enhancement strategy SH Kuk, SM Han, BH Kim, SH Baek, JH Han, S Kim 2021 IEEE International Electron Devices Meeting (IEDM), 33.6. 1-33.6. 4, 2021 | 18 | 2021 |
| An investigation of HZO-based n/p-FeFET operation mechanism and improved device performance by the electron detrapping mode SH Kuk, SM Han, BH Kim, SH Baek, JH Han, SH Kim IEEE Transactions on Electron Devices 69 (4), 2080-2087, 2022 | 16 | 2022 |
| Dielectric-engineered high-speed, low-power, highly reliable charge trap flash-based synaptic device for neuromorphic computing beyond inference JP Kim, SK Kim, S Park, S Kuk, T Kim, BH Kim, SH Ahn, YH Cho, ... Nano Letters 23 (2), 451-461, 2023 | 10 | 2023 |
| Oxygen scavenging of HfZrO 2-based capacitors for improving ferroelectric properties BH Kim, S Kuk, SK Kim, JP Kim, DM Geum, SH Baek, SH Kim Nanoscale Advances 4 (19), 4114-4121, 2022 | 8 | 2022 |
| Logic and memory ferroelectric field-effect-transistor using reversible and irreversible domain wall polarization SH Kuk, S Han, DH Lee, BH Kim, J Shim, MH Park, JH Han, SH Kim IEEE Electron Device Letters 44 (1), 36-39, 2022 | 4 | 2022 |
| IL Scavenging and Recovery Strategies to Improve the Performance and Reliability of HZO-Based FeFETs BH Kim, SK Kim, S Kuk, YJ Suh, J Jeong, JP Kim, DM Geum, S Kim 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 2 | 2023 |
| Strategy for 3D Ferroelectric Transistor: Critical Surface Orientation Dependence of HfZrOx on Si SH Kuk, JH Han, BH Kim, JP Kim, SH Kim 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 2 | 2023 |
| Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement BH Kim, SH Kuk, SK Kim, JP Kim, YJ Suh, J Jeong, DM Geum, SH Baek, ... Advanced Electronic Materials 9 (5), 2201257, 2023 | 2 | 2023 |
| Effect of Scandium Insertion Into the Gate-Stack of Ferroelectric Field-Effect Transistors BH Kim, SH Kuk, SK Kim, JP Kim, YJ Suh, J Jeong, DM Geum, SH Baek, ... IEEE Transactions on Electron Devices 70 (4), 1996-2000, 2023 | 2 | 2023 |
| Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics BH Kim, SH Kuk, SK Kim, JP Kim, YJ Suh, J Jeong, CJ Lee, DM Geum, ... Advanced Electronic Materials 10 (1), 2300327, 2024 | 1 | 2024 |
| Proposal of P-Channel FE NAND with High Drain Current and Feasible Disturbance for Next Generation 3D NAND SH Kuk, JH Han, BH Kim, J Kim, SH Kim 2023 IEEE International Memory Workshop (IMW), 1-4, 2023 | 1 | 2023 |
| Heavily Doped Channel Carrier Mobility in -GaO Lateral Accumulation MOSFET SH Kuk, S Choi, HY Kim, K Ko, J Jeong, DM Geum, JH Han, JH Park, ... IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Large Polarization of Hf0.5Zr0.5Ox Ferroelectric Film on InGaAs with Electric-Field Cycling and Annealing Temperature Engineering YJ Suh, J Jeong, BH Kim, SH Kuk, SK Kim, JP Kim, S Kim IEEE Electron Device Letters, 2024 | | 2024 |
| Examination of Ferroelectric FET for “Cold” Nonvolatile Memory SH Kuk, SM Han, BH Kim, JP Kim, SK Kim, SY Ahn, MH Park, JH Han, ... IEEE Transactions on Electron Devices, 2023 | | 2023 |
| Memory window enhancement in n-type ferroelectric field-effect transistors by engineering ozone exposure in atomic layer deposition of HfZrOx films J Jeon, SH Kuk, AJ Cho, SH Baek, SH Kim, SK Kim Applied Physics Letters 122 (23), 2023 | | 2023 |
| Comprehensive understanding of HZO-Based n/p-channel FEFET operation mechanism and improved device performance by the electron de-trapping mode SH Kuk 한국과학기술원, 2022 | | 2022 |
