Ultrathin (<4 nm) and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits ML Green, EP Gusev, R Degraeve, EL Garfunkel
Journal of Applied Physics 90 (5), 2057-2121, 2001
1048 2001 10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011
900 2011 New insights in the relation between electron trap generation and the statistical properties of oxide breakdown R Degraeve, G Groeseneken, R Bellens, JL Ogier, M Depas, PJ Roussel, ...
IEEE Transactions on Electron Devices 45 (4), 904-911, 1998
756 1998 A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides R Degraeve, G Groeseneken, R Bellens, M Depas, HE Maes
Proceedings of International Electron Devices Meeting, 863-866, 1995
458 1995 Origin of the threshold voltage instability in SiO2 /HfO2 dual layer gate dielectrics A Kerber, E Cartier, L Pantisano, R Degraeve, T Kauerauf, Y Kim, A Hou, ...
IEEE Electron Device Letters 24 (2), 87-89, 2003
440 2003 Origin of NBTI variability in deeply scaled pFETs B Kaczer, T Grasser, PJ Roussel, J Franco, R Degraeve, LA Ragnarsson, ...
2010 IEEE International Reliability Physics Symposium, 26-32, 2010
371 2010 Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions M Houssa, L Pantisano, LÅ Ragnarsson, R Degraeve, T Schram, ...
Materials Science and Engineering: R: Reports 51 (4-6), 37-85, 2006
328 2006 High-k dielectrics for future generation memory devices JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ...
Microelectronic engineering 86 (7-9), 1789-1795, 2009
296 2009 Endurance/Retention Trade-off on Cap 1T1R Bipolar RRAM YY Chen, L Goux, S Clima, B Govoreanu, R Degraeve, GS Kar, A Fantini, ...
IEEE Transactions on electron devices 60 (3), 1114-1121, 2013
279 2013 Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells L Goux, P Czarnecki, YY Chen, L Pantisano, XP Wang, R Degraeve, ...
Applied Physics Letters 97 (24), 2010
272 2010 Intrinsic switching variability in HfO2 RRAM A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ...
2013 5th IEEE International Memory Workshop, 30-33, 2013
249 2013 Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability B Kaczer, R Degraeve, M Rasras, K Van de Mieroop, PJ Roussel, ...
IEEE Transactions on Electron Devices 49 (3), 500-506, 2002
238 2002 Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification B Kaczer, V Arkhipov, R Degraeve, N Collaert, G Groeseneken, ...
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings …, 2005
213 2005 Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction R Degraeve, B Kaczer, G Groeseneken
Microelectronics Reliability 39 (10), 1445-1460, 1999
213 1999 Balancing SET/RESET Pulse for Endurance in 1T1R Bipolar RRAM YY Chen, B Govoreanu, L Goux, R Degraeve, A Fantini, GS Kar, ...
IEEE Transactions on Electron devices 59 (12), 3243-3249, 2012
212 2012 Imaging the three-dimensional conductive channel in filamentary-based oxide resistive switching memory U Celano, L Goux, R Degraeve, A Fantini, O Richard, H Bender, ...
Nano letters 15 (12), 7970-7975, 2015
192 2015 Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/gate dielectrics A Kerber, E Cartier, L Pantisano, M Rosmeulen, R Degraeve, T Kauerauf, ...
2003 IEEE International Reliability Physics Symposium Proceedings, 2003 …, 2003
191 2003 A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown R Degraeve, JL Ogier, R Bellens, PJ Roussel, G Groeseneken, HE Maes
IEEE Transactions on Electron Devices 45 (2), 472-481, 1998
158 1998 Improvement of data retention in HfO2 /Hf 1T1R RRAM cell under low operating current YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ...
2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013
140 2013 Relation between breakdown mode and breakdown location in short channel NMOSFETs and its impact on reliability specifications R Degraeve, B Kaczer, A De Keersgieter, G Groeseneken
2001 IEEE International Reliability Physics Symposium Proceedings. 39th …, 2001
131 2001