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Benjamin Leung
Benjamin Leung
Sandia National Laboratories
Bestätigte E-Mail-Adresse bei yale.edu
Titel
Zitiert von
Zitiert von
Jahr
Light-emitting metasurfaces: simultaneous control of spontaneous emission and far-field radiation
S Liu, A Vaskin, S Addamane, B Leung, MC Tsai, Y Yang, ...
Nano letters 18 (11), 6906-6914, 2018
1542018
Nonpolar InGaN/GaN core–shell single nanowire lasers
C Li, JB Wright, S Liu, P Lu, JJ Figiel, B Leung, WW Chow, I Brener, ...
Nano letters 17 (2), 1049-1055, 2017
1242017
Understanding and controlling heteroepitaxy with the kinetic Wulff plot: A case study with GaN
Q Sun, CD Yerino, B Leung, J Han, ME Coltrin
Journal of Applied Physics 110 (5), 2011
1192011
A conductivity‐based selective etching for next generation GaN devices
Y Zhang, SW Ryu, C Yerino, B Leung, Q Sun, Q Song, H Cao, J Han
physica status solidi (b) 247 (7), 1713-1716, 2010
1052010
Morphological and microstructural evolution in the two-step growth of nonpolar a-plane GaN on r-plane sapphire
Q Sun, BH Kong, CD Yerino, TS Ko, B Leung, HK Cho, J Han
Journal of Applied Physics 106 (12), 2009
892009
Using the kinetic Wulff plot to design and control nonpolar and semipolar GaN heteroepitaxy
B Leung, Q Sun, CD Yerino, J Han, ME Coltrin
Semiconductor Science and Technology 27 (2), 024005, 2012
872012
Improving microstructural quality of semipolar (112̱2) GaN on m-plane sapphire by a two-step growth process
Q Sun, B Leung, CD Yerino, Y Zhang, J Han
Applied Physics Letters 95 (23), 2009
872009
Wide bandgap III-nitride nanomembranes for optoelectronic applications
SH Park, G Yuan, D Chen, K Xiong, J Song, B Leung, J Han
Nano letters 14 (8), 4293-4298, 2014
802014
The fabrication of large-area, free-standing GaN by a novel nanoetching process
Y Zhang, Q Sun, B Leung, J Simon, ML Lee, J Han
Nanotechnology 22 (4), 045603, 2010
802010
A liftoff process of GaN layers and devices through nanoporous transformation
Y Zhang, B Leung, J Han
Applied Physics Letters 100 (18), 2012
692012
Multi-color broadband visible light source via GaN hexagonal annular structure
YH Ko, J Song, B Leung, J Han, YH Cho
Scientific reports 4 (1), 5514, 2014
632014
Strain relaxation and dislocation reduction in AlGaN step‐graded buffer for crack‐free GaN on Si (111)
B Leung, J Han, Q Sun
physica status solidi (c) 11 (3‐4), 437-441, 2014
622014
Broadband nanophotonic waveguides and resonators based on epitaxial GaN thin films
AW Bruch, C Xiong, B Leung, M Poot, J Han, HX Tang
Applied Physics Letters 107 (14), 2015
562015
Mechanical properties of nanoporous GaN and its application for separation and transfer of GaN thin films
S Huang, Y Zhang, B Leung, G Yuan, G Wang, H Jiang, Y Fan, Q Sun, ...
ACS applied materials & interfaces 5 (21), 11074-11079, 2013
562013
Shape transformation of nanoporous GaN by annealing: From buried cavities to nanomembranes
CD Yerino, Y Zhang, B Leung, ML Lee, TC Hsu, CK Wang, WC Peng, ...
Applied Physics Letters 98 (25), 2011
442011
Improved photoelectrochemical water splitting efficiency of nanoporous GaN photoanode
SW Ryu, Y Zhang, B Leung, C Yerino, J Han
Semiconductor science and technology 27 (1), 015014, 2011
432011
Epitaxial lateral overgrowth of nitrogen-polar (0001̅) GaN by metalorganic chemical vapor deposition
J Song, G Yuan, K Xiong, B Leung, J Han
Crystal growth & design 14 (5), 2510-2515, 2014
402014
Evolutionary selection growth: towards template‐insensitive preparation of single‐crystal layers
B Leung, J Song, Y Zhang, J Han
Advanced Materials 25 (9), 1285-1289, 2013
392013
Single crystal gallium nitride nanomembrane photoconductor and field effect transistor
K Xiong, SH Park, J Song, G Yuan, D Chen, B Leung, J Han
Advanced Functional Materials 24 (41), 6503-6508, 2014
362014
Semipolar (202¯ 1) GaN and InGaN quantum wells on sapphire substrates
B Leung, D Wang, YS Kuo, K Xiong, J Song, D Chen, SH Park, SY Hong, ...
Applied Physics Letters 104 (26), 2014
352014
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