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Muhammad Masuduzzaman
Muhammad Masuduzzaman
Bestätigte E-Mail-Adresse bei purdue.edu
Titel
Zitiert von
Zitiert von
Jahr
Direct Observation of Self-heating in III-V Gate-all-around Nanowire MOSFETs
SH Shin, M Masuduzzaman, MA Wahab, K Maize, JJ Gu, M Si, A Shakouri, ...
2014 IEEE International Electron Devices Meeting (IEDM), 20.3.1, 2014
822014
Exploring the capability of multifrequency charge pumping in resolving location and energy levels of traps within dielectric
M Masuduzzaman, AE Islam, MA Alam
IEEE transactions on electron devices 55 (12), 3421-3431, 2008
692008
Intrinsic correlation between PBTI and TDDB degradations in nMOS HK/MG dielectrics
J Yang, M Masuduzzaman, K Joshi, S Mukhopadhyay, J Kang, ...
2012 IEEE international reliability physics symposium (IRPS), 5D. 4.1-5D. 4.7, 2012
412012
Effective Nanometer Airgap of NEMS Devices Using Negative Capacitance of Ferroelectric Materials
M Masuduzzaman, MA Alam
Nano Letters 14 (6), 3160-3165, 2014
382014
Impact of nanowire variability on performance and reliability of gate-all-around III-V MOSFETs
SH Shin, M Masuduzzaman, JJ Gu, MA Wahab, N Conrad, M Si, PD Ye, ...
2013 IEEE International Electron Devices Meeting (IEDM), 7.5. 1-7.5. 4, 2013
382013
The origin of broad distribution of breakdown times in polycrystalline thin film dielectrics
M Masuduzzaman, S Xie, J Chung, D Varghese, J Rodriguez, S Krishnan, ...
Applied Physics Letters 101 (15), 153511-153511-5, 2012
242012
Origin and Implications of Hot Carrier Degradation of Gate-all-around nanowire III-V MOSFETs
SH Shin, MA Wahab, M Masuduzzaman, M Si, J Gu, PD Ye, MA Alam
International Reliability Physics Symposium (IRPS), 4A.3, 2014
222014
SILC-based reassignment of trapping and trap generation regimes of positive bias temperature instability
JQ Yang, M Masuduzzman, JF Kang, MA Alam
2011 International Reliability Physics Symposium, 3A. 3.1-3A. 3.6, 2011
202011
Performance and variability studies of InGaAs gate-all-around nanowire MOSFETs
N Conrad, SH Shin, J Gu, M Si, H Wu, M Masuduzzaman, MA Alam, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 489-496, 2013
182013
Physics and mechanisms of dielectric trap profiling by Multi-frequency Charge Pumping (MFCP) method
M Masuduzzaman, AE Islam, MA Alam
2009 IEEE International Reliability Physics Symposium, 13-20, 2009
162009
A multi-probe correlated bulk defect characterization scheme for ultra-thin high-к dielectric
M Masuduzzaman, AE Islam, MA Alam
2010 IEEE International Reliability Physics Symposium, 1069-1072, 2010
152010
Observation and control of hot atom damage in ferroelectric devices
M Masuduzzaman, D Varghese, JA Rodriguez, S Krishnan, MA Alam
Electron Devices, IEEE Transactions on 61 (10), 3490-3498, 2014
132014
Probing bulk defect energy bands using generalized charge pumping method
M Masuduzzaman, B Weir, MA Alam
Journal of Applied Physics 111 (7), 074501-074501-9, 2012
132012
NEMS devices with series ferroelectric negative capacitor
MA Alam, M Masuduzzaman, A Jain
US Patent 9,755,041, 2017
122017
Experimental identification of unique oxide defect regions by characteristic response of charge pumping
M Masuduzzaman, A Islam, R Degraeve, M Cho, M Zahid, M Alam
2011 International Reliability Physics Symposium, 3A. 5.1-3A. 5.6, 2011
102011
Hot Atom Damage (HAD) Limited TDDB Lifetime of Ferroelectric Memories
M Masuduzzaman, MA Alam
2013 IEEE International Electron Devices Meeting (IEDM), 21.4.1, 2013
62013
The origin and consequences of push-pull breakdown in series connected dielectrics
M Masuduzzaman, D Varghese, H Guo, S Krishnan, MA Alam
Applied Physics Letters 99 (26), 2011
52011
Characterizing self-heating dynamics using cyclostationary measurements
SH Shin, M Masuduzzaman, MA Alam
arXiv preprint arXiv:1609.00346, 2016
22016
NEMS devices with series ferroelectric negative capacitor
MA Alam, M Masuduzzaman, A Jain
US Patent 10,312,342, 2019
12019
Lifetime of Ferroelectric Devices
MA Alam, M Masuduzzaman
US Patent App. 14/533,897, 2015
12015
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