Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study H Jiang, J Singh
Physical Review B 56 (8), 4696, 1997
429 1997 Rapid carrier relaxation in In 0.4 Ga 0.6 A s/G a A s quantum dots characterized by differential transmission spectroscopy TS Sosnowski, TB Norris, H Jiang, J Singh, K Kamath, P Bhattacharya
Physical Review B 57 (16), R9423, 1998
344 1998 On hadronic production of the Bc meson CH Chang, YQ Chen, GP Han, HT Jiang
Physics Letters B 364 (2), 78-86, 1995
167 1995 Self-assembled semiconductor structures: Electronic and optoelectronic properties H Jiang, J Singh
IEEE journal of quantum electronics 34 (7), 1188-1196, 1998
148 1998 In (Ga) As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties P Bhattacharya, KK Kamath, J Singh, D Klotzkin, J Phillips, HT Jiang, ...
IEEE Transactions on Electron Devices 46 (5), 871-883, 1999
141 1999 Small-signal modulation and differential gain of single-mode self-organized quantum dot lasers K Kamath, J Phillips, H Jiang, J Singh, P Bhattacharya
Applied Physics Letters 70 (22), 2952-2953, 1997
130 1997 Comparison of the and direct diagonalization approaches to the electronic structure of InAs/GaAs quantum dots LW Wang, AJ Williamson, A Zunger, H Jiang, J Singh
Applied Physics Letters 76 (3), 339-341, 2000
124 2000 Temperature-dependent measurement of Auger recombination in self-organized quantum dots S Ghosh, P Bhattacharya, E Stoner, J Singh, H Jiang, S Nuttinck, J Laskar
Applied Physics Letters 79 (6), 722-724, 2001
103 2001 Temperature-dependent carrier dynamics in self-assembled InGaAs quantum dots J Urayama, TB Norris, H Jiang, J Singh, P Bhattacharya
Applied physics letters 80 (12), 2162-2164, 2002
96 2002 Photoluminescence and time-resolved photoluminescence characteristics of self-organized single- and multiple-layer quantum dot laser structures K Kamath, N Chervela, KK Linder, T Sosnowski, HT Jiang, T Norris, ...
Applied physics letters 71 (7), 927-929, 1997
81 * 1997 Nonequilibrium distribution in quantum dots lasers and influence on laser spectral output H Jiang, J Singh
Journal of applied physics 85 (10), 7438-7442, 1999
69 1999 Conduction band spectra in self-assembled InAs/GaAs dots: A comparison of effective mass and an eight-band approach H Jiang, J Singh
Applied physics letters 71 (22), 3239-3241, 1997
57 1997 System and method for determining on-chip bit error rate (BER) in a communication system N Fan, T Hoang, H Jiang
US Patent 7,093,172, 2006
50 2006 System and method for data transition control in a multirate communication system H Jiang, T Hoang
US Patent App. 10/282,849, 2004
45 2004 Radiative and non-radiative inter-subband transition in self assembled quantum dots H Jiang, J Singh
Physica E: Low-dimensional Systems and Nanostructures 2 (1-4), 720-724, 1998
32 1998 Communication device employing binary product coding with selective additional cyclic redundancy check (CRC) therein Z Wang, CJ Chen, K Xiao, H Jiang, JR Fife, S Bhoja
US Patent 8,572,460, 2013
31 2013 Strain tensor and electron and hole spectra in self-assembled InGaAs/GaAs and SiGe/Si quantum dots H Jiang, J Singh
Physica E: Low-dimensional Systems and Nanostructures 2 (1-4), 614-618, 1998
31 1998 Linear electro-optic effect due to the built-in electric field in InGaN/GaN quantum wells H Jiang, J Singh
Applied physics letters 75 (13), 1932-1934, 1999
30 1999 System and method for performing on-chip self-testing H Jiang, T Hoang
US Patent 7,127,648, 2006
28 2006 On-chip standalone self-test system and method TM Hoang, H Jiang
US Patent 7,111,208, 2006
28 2006