| The effect of gate oxide processes on the performance of 4H-SiC MOSFETs and gate-controlled diodes Y Wang, K Tang, T Khan, MK Balasubramanian, H Naik, W Wang, ... IEEE transactions on electron devices 55 (8), 2046-2053, 2008 | 64 | 2008 |
| GaN MOS capacitors and FETs on plasma-etched GaN surfaces K Tang, W Huang, TP Chow Journal of electronic materials 38, 523-528, 2009 | 43 | 2009 |
| Enhancement-mode GaN hybrid MOS-HEMTs with breakdown voltage of 1300V K Tang, Z Li, TP Chow, Y Niiyama, T Nomura, S Yoshida 2009 21st International Symposium on Power Semiconductor Devices & IC's, 279-282, 2009 | 27 | 2009 |
| Effect of graphite cap for implant activation on inversion channel mobility in 4H-SiC MOSFETs H Naik, K Tang, TP Chow Materials Science Forum 615, 773-776, 2009 | 21 | 2009 |
| Comparison of 4H-SiC MOSFETs on (0001),(000-1) and (11-20) oriented substrates H Naik, K Tang, T Marron, TP Chow, J Fronheiser Materials Science Forum 615, 785-788, 2009 | 12 | 2009 |
| Modeling of high voltage 4H-SiC JFETs and MOSFETs for power electronics applications Y Wang, C Cass, K Tang, H Naik, TP Chow, D Boroyevich, F Wang 2008 IEEE Power Electronics Specialists Conference, 4758-4761, 2008 | 12 | 2008 |
| Design and simulations of novel enhancement‐mode high‐voltage GaN vertical hybrid MOS‐HEMTs Z Li, K Tang, TP Chow, M Sugimoto, T Uesugi, T Kachi physica status solidi c 7 (7‐8), 1944-1948, 2010 | 6 | 2010 |
| Temperature dependence of GaN MOS capacitor characteristics Z Guo, K Tang, TP Chow physica status solidi (c) 13 (5‐6), 336-340, 2016 | 2 | 2016 |
| Performance of MOSFETs on Reactive-Ion-Etched GaN Surfaces K Tang, W Huang, TP Chow International Journal of High Speed Electronics and Systems 19 (01), 121-127, 2009 | 1 | 2009 |
| EFFECT OF GATE OXIDE PROCESSES ON 4 H-SiC MOSFETs ON (000-1) ORIENTED SUBSTRATE H Naik, K Tang, TP Chow International Journal of High Speed Electronics and Systems 19 (01), 161-166, 2009 | | 2009 |
T. Paul ChowProfessor, Rensselaer Polytechnic InstituteBestätigte E-Mail-Adresse bei rpi.edu
