| Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers SA Al Muyeed, W Sun, MR Peart, RM Lentz, X Wei, D Borovac, R Song, ... Journal of Applied Physics 126 (21), 2019 | 21 | 2019 |
| AlInN for vertical power electronic devices MR Peart, N Tansu, JJ Wierer IEEE Transactions on Electron Devices 65 (10), 4276-4281, 2018 | 13 | 2018 |
| Thermal oxidation of AlInN for III-nitride electronic and optoelectronic devices MR Peart, X Wei, D Borovac, W Sun, N Tansu, JJ Wierer Jr ACS Applied Electronic Materials 1 (8), 1367-1371, 2019 | 11 | 2019 |
| Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching X Wei, SA Al Muyeed, MR Peart, W Sun, N Tansu, JJ Wierer Applied Physics Letters 113 (12), 2018 | 10 | 2018 |
| Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy D Borovac, W Sun, MR Peart, R Song, JJ Wierer Jr, N Tansu Journal of Crystal Growth 548, 125847, 2020 | 8 | 2020 |
| Electrical properties of MgO/GaN metal-oxide-semiconductor structures ON Ogidi-Ekoko, JC Goodrich, AJ Howzen, MR Peart, NC Strandwitz, ... Solid-State Electronics 172, 107881, 2020 | 8 | 2020 |
| AlInN/GaN diodes for power electronic devices MR Peart, D Borovac, W Sun, R Song, N Tansu, JJ Wierer Applied Physics Express 13 (9), 091006, 2020 | 7 | 2020 |
| Thermal oxidation rates and resulting optical constants of Al0. 83In0. 17N films grown on GaN E Palmese, MR Peart, D Borovac, R Song, N Tansu, JJ Wierer Journal of Applied Physics 129 (12), 2021 | 5 | 2021 |
| Edge termination for III-Nitride vertical power devices using polarization engineering MR Peart, JJ Wierer IEEE Transactions on Electron Devices 67 (2), 571-575, 2020 | 1 | 2020 |
| Controlled Synthesis of InGaN Quantum Dots for Efficient Light Emitters X Wei, SA Al Muyeed, M Peart, N Tansu, JJ Wierer 2018 IEEE Photonics Conference (IPC), 1-2, 2018 | | 2018 |
| The Faraday Effect in Gallium Nitride MR Peart | | 2016 |
