Follow
Xiaochi Liu 刘晓迟
Xiaochi Liu 刘晓迟
School of Physics and Electronics, Central South University
Verified email at csu.edu.cn
Title
Cited by
Cited by
Year
Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics
MS Choi, D Qu, D Lee, X Liu, K Watanabe, T Taniguchi, WJ Yoo
ACS nano 8 (9), 9332-9340, 2014
5662014
Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide
HM Li, D Lee, D Qu, X Liu, J Ryu, A Seabaugh, WJ Yoo
Nature communications 6 (1), 6564, 2015
3482015
P‐type polar transition of chemically doped multilayer MoS2 transistor
X Liu#, D Qu#, J Ryu, F Ahmed, Z Yang, D Lee, WJ Yoo
Advanced Materials 28 (12), 2345-2351, 2016
2392016
Carrier‐type modulation and mobility improvement of thin MoTe2
D Qu#, X Liu#, M Huang, C Lee, F Ahmed, H Kim, RS Ruoff, J Hone, ...
Advanced Materials 29 (39), 1606433, 2017
1832017
Modulation of quantum tunneling via a vertical two-dimensional black phosphorus and molybdenum disulfide p–n junction
X Liu#, D Qu#, HM Li, I Moon, F Ahmed, C Kim, M Lee, Y Choi, JH Cho, ...
ACS nano 11 (9), 9143-9150, 2017
1812017
Highly oriented monolayer graphene grown on a Cu/Ni (111) alloy foil
M Huang, M Biswal, HJ Park, S Jin, D Qu, S Hong, Z Zhu, L Qiu, D Luo, ...
Acs Nano 12 (6), 6117-6127, 2018
1502018
Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors
HM Li, DY Lee, MS Choi, D Qu, X Liu, CH Ra, WJ Yoo
Scientific reports 4 (1), 4041, 2014
1382014
Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography
X Zheng, A Calò, E Albisetti, X Liu, ASM Alharbi, G Arefe, X Liu, M Spieser, ...
Nature Electronics 2 (1), 17-25, 2019
1362019
Carrier transport at the metal–MoS 2 interface
F Ahmed, MS Choi, X Liu, WJ Yoo
Nanoscale 7 (20), 9222-9228, 2015
1192015
Monolayer molybdenum disulfide transistors with single-atom-thick gates
Y Zhu, Y Li, G Arefe, RA Burke, C Tan, Y Hao, X Liu, X Liu, WJ Yoo, ...
Nano letters 18 (6), 3807-3813, 2018
1102018
Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects
X Liu#, MS Choi#, E Hwang, WJ Yoo, J Sun
Advanced Materials, 2108425, 2021
942021
Effects of plasma treatment on surface properties of ultrathin layered MoS2
S Kim, MS Choi, D Qu, CH Ra, X Liu, M Kim, YJ Song, WJ Yoo
2D Materials 3 (3), 035002, 2016
742016
Edge contacts of graphene formed by using a controlled plasma treatment
DW Yue, CH Ra, XC Liu, DY Lee, WJ Yoo
Nanoscale 7 (2), 825-831, 2015
702015
High electric field carrier transport and power dissipation in multilayer black phosphorus field effect transistor with dielectric engineering
F Ahmed, YD Kim, MS Choi, X Liu, D Qu, Z Yang, J Hu, IP Herman, ...
Advanced Functional Materials 27 (4), 1604025, 2017
562017
High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure
S Hwan Lee, M Sup Choi, J Lee, C Ho Ra, X Liu, E Hwang, J Hee Choi, ...
Applied Physics Letters 104 (5), 2014
462014
Tunneling devices and methods of manufacturing the same
J Choi, W Yoo, SH Lee, C Min-Sup, XC Liu, J LEE
US Patent 9,269,775, 2016
372016
Self-screened high performance multi-layer MoS 2 transistor formed by using a bottom graphene electrode
D Qu#, X Liu#, F Ahmed, D Lee, WJ Yoo
Nanoscale 7 (45), 19273-19281, 2015
372015
Self-Terminated Surface Monolayer Oxidation Induced Robust Degenerate Doping in MoTe2 for Low Contact Resistance
X Liu#, D Qu, Y Yuan, J Sun, WJ Yoo
ACS Appl. Mater. Interfaces 12 (23), 26586–26592, 2020
362020
Charge–Ferroelectric Transition in Ultrathin Na0. 5Bi4. 5Ti4O15 Flakes Probed via a Dual‐Gated Full van der Waals Transistor
X Liu#, X Zhou#, Y Pan, J Yang, H Xiang, Y Yuan, S Liu, H Luo, D Zhang, ...
Advanced Materials 32 (49), 2004813, 2020
332020
High performance WSe2 p-MOSFET with intrinsic n-channel based on back-to-back p–n junctions
X Liu#, Y Pan, J Yang, D Qu, H Li, WJ Yoo, J Sun
Applied Physics Letters 118 (23), 233101, 2021
272021
The system can't perform the operation now. Try again later.
Articles 1–20