| Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy V Senez, A Armigliato, I De Wolf, G Carnevale, R Balboni, S Frabboni, ... Journal of applied physics 94 (9), 5574-5583, 2003 | 125 | 2003 |
| Hydrogen-related complexes as the stressing species in high-fluence, hydrogen-implanted, single-crystal silicon GF Cerofolini, L Meda, R Balboni, F Corni, S Frabboni, G Ottaviani, ... Physical Review B 46 (4), 2061, 1992 | 104 | 1992 |
| Measuring the orbital angular momentum spectrum of an electron beam V Grillo, AH Tavabi, F Venturi, H Larocque, R Balboni, GC Gazzadi, ... Nature Communications 8, 15536, 2017 | 99 | 2017 |
| Realization of electron vortices with large orbital angular momentum using miniature holograms fabricated by electron beam lithography E Mafakheri, AH Tavabi, PH Lu, R Balboni, F Venturi, C Menozzi, ... Applied Physics Letters 110 (9), 093113, 2017 | 95 | 2017 |
| Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices A Armigliato, R Balboni, GP Carnevale, G Pavia, D Piccolo, S Frabboni, ... Applied physics letters 82 (13), 2172-2174, 2003 | 86 | 2003 |
| Observation of nanoscale magnetic fields using twisted electron beams V Grillo, TR Harvey, F Venturi, JS Pierce, R Balboni, F Bouchard, ... Nature Communications 8 (1), 689, 2017 | 70 | 2017 |
| Generation and application of bessel beams in electron microscopy V Grillo, J Harris, GC Gazzadi, R Balboni, E Mafakheri, MR Dennis, ... Ultramicroscopy 166, 48-60, 2016 | 56 | 2016 |
| Determination of bulk mismatch values in trasmission electron microscopy cross-sections of heteostructures by convergent-beam electron diffraction R Balboni, S Frabboni, A Armigliato Philosophical Magazine A 77 (1), 67-83, 1998 | 55 | 1998 |
| Techniques for mechanical strain analysis in sub-micrometer structures: TEM/CBED, micro-Raman spectroscopy, X-ray micro-diffraction and modeling I De Wolf, V Senez, R Balboni, A Armigliato, S Frabboni, A Cedola, ... Microelectronic engineering 70 (2), 425-435, 2003 | 54 | 2003 |
| Improving spatial resolution of convergent beam electron diffraction strain mapping in silicon microstructures A Armigliato, R Balboni, S Frabboni Applied Physics Letters 86 (6), 063508-063508-3, 2005 | 52 | 2005 |
| Hydrogen precipitation in highly oversaturated single‐crystalline silicon GF Cerofolini, R Balboni, D Bisero, F Corni, S Frabboni, G Ottaviani, ... physica status solidi (a) 150 (2), 539-586, 1995 | 42 | 1995 |
| TEM/CBED determination of strain in silicon-based submicrometric electronic devices A Armigliato, R Balboni, S Balboni, S Frabboni, A Tixier, GP Carnevale, ... Micron 31 (3), 203-209, 2000 | 35 | 2000 |
| On the assessment of local stress distributions in integrated circuits J Vanhellemont, I De Wolf, KGF Janssens, S Frabboni, R Balboni, ... Applied surface science 63 (1-4), 119-125, 1993 | 33 | 1993 |
| Structural and analytical characterization of Si1-x Gex/Si heterostructures by Rutherford backscattering spectrometry and channeling, analytical electron microscopy and double … A Armigliato, M Servidori, F Cembali, R Fabbri, R Rosa, F Corticelli, ... Microscopy Microanalysis Microstructures 3 (4), 363-384, 1992 | 28 | 1992 |
| Method for determination of the displacement field in patterned nanostructures by TEM/CBED analysis of split high‐order Laue zone line profiles A Spessot, S Frabboni, R Balboni, A Armigliato Journal of Microscopy 226 (2), 140-155, 2007 | 24 | 2007 |
| Particle nucleation in high solids batch miniemulsion polymerization stabilized with a polymeric surfactant SJ Bohórquez, JM Asua Journal of Polymer Science Part A: Polymer Chemistry 46 (19), 6407-6415, 2008 | 23 | 2008 |
| Determination of lattice strain in local isolation structures by electron-diffraction techniques and micro-Raman spectroscopy A Armigliato, R Barboni, I Dewolf, S Frabboni, KGF Janssens, ... Microscopy of semiconducting materials 134, 229-234, 1993 | 23* | 1993 |
| Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon D Bisero, F Corni, S Frabboni, R Tonini, G Ottaviani, R Balboni Journal of applied physics 83 (8), 4106-4110, 1998 | 20 | 1998 |
| EPR and X-ray diffraction study of damage produced by implantation of B ions (50 keV, 1 MeV) or Si ions (50 keV, 700 keV, 1.5 MeV) into silicon L Sealy, RC Barklie, G Lulli, R Nipoti, R Balboni, S Milita, M Servidori Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995 | 20 | 1995 |
| Lattice strain and static disorder determination in S i/S i 1-x Ge x/Si heterostructures by convergent beam electron diffraction S Frabboni, F Gambetta, A Armigliato, R Balboni, S Balboni, F Cembali Physical Review B 60 (19), 13750, 1999 | 19 | 1999 |
Aldo ArmigliatoCNR-Istituto IMM BolognaBestätigte E-Mail-Adresse bei bo.imm.cnr.it
