Michael E  Ramon
Michael E Ramon
Bestätigte E-Mail-Adresse bei utexas.edu
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Zitiert von
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Impact of deposition and annealing temperature on material and electrical characteristics of ALD HfO2
D Triyoso, R Liu, D Roan, M Ramon, NV Edwards, R Gregory, D Werho, ...
Journal of the Electrochemical Society 151 (10), F220, 2004
1402004
CMOS-compatible synthesis of large-area, high-mobility graphene by chemical vapor deposition of acetylene on cobalt thin films
ME Ramon, A Gupta, C Corbet, DA Ferrer, HCP Movva, G Carpenter, ...
Acs Nano 5 (9), 7198-7204, 2011
1202011
Film properties of ALD and gate dielectrics grown on Si with various pre-deposition treatments
DH Triyoso, RI Hegde, J Grant, P Fejes, R Liu, D Roan, M Ramon, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
962004
Impact of titanium addition on film characteristics of gate dielectrics deposited by atomic layer deposition
DH Triyoso, RI Hegde, S Zollner, ME Ramon, S Kalpat, R Gregory, ...
Journal of applied physics 98 (5), 054104, 2005
872005
Impact of titanium addition on film characteristics of gate dielectrics deposited by atomic layer deposition
DH Triyoso, RI Hegde, S Zollner, ME Ramon, S Kalpat, R Gregory, ...
Journal of applied physics 98 (5), 054104, 2005
872005
Three-gigahertz graphene frequency doubler on quartz operating beyond the transit frequency
ME Ramón, KN Parrish, SF Chowdhury, CW Magnuson, HCP Movva, ...
IEEE Transactions on Nanotechnology 11 (5), 877-883, 2012
612012
HfO2 gate dielectrics deposited via tetrakis diethylamido hafnium
J Schaeffer, NV Edwards, R Liu, D Roan, B Hradsky, R Gregory, J Kulik, ...
Journal of the Electrochemical Society 150 (4), F67, 2003
602003
Defect Passivation With Fluorine and Interface Engineering for Hf-Based High-/Metal Gate Stack Device Reliability and Performance Enhancement
HH Tseng, PJ Tobin, S Kalpat, JK Schaeffer, ME Ramon, LRC Fonseca, ...
IEEE transactions on electron devices 54 (12), 3267-3275, 2007
582007
Physical and electrical characteristics of HfO2 gate dielectrics deposited by ALD and MOCVD
DH Triyoso, M Ramon, RI Hegde, D Roan, R Garcia, J Baker, XD Wang, ...
Journal of the Electrochemical Society 152 (3), G203, 2005
512005
Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO/sub 2/stack
HH Tseng, CC Capasso, JK Schaeffer, EA Hebert, PJ Tobin, DC Gilmer, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
422004
Characteristics of mixed oxides and nanolaminates of atomic layer deposited HfO2–TiO2 gate dielectrics
DH Triyoso, RI Hegde, XD Wang, MW Stoker, R Rai, ME Ramon, ...
Journal of The Electrochemical Society 153 (9), G834, 2006
392006
Characteristics of mixed oxides and nanolaminates of atomic layer deposited HfO2–TiO2 gate dielectrics
DH Triyoso, RI Hegde, XD Wang, MW Stoker, R Rai, ME Ramon, ...
Journal of The Electrochemical Society 153 (9), G834, 2006
392006
Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with gate dielectric
D Shahrjerdi, T Akyol, M Ramon, DI Garcia-Gutierrez, E Tutuc, ...
Applied Physics Letters 92 (20), 203505, 2008
362008
BTI characteristics and mechanisms of metal gated HfO/sub 2/films with enhanced interface/bulk process treatments
S Kalpat, HH Tseng, M Ramon, M Moosa, D Tekleab, PJ Tobin, ...
IEEE Transactions on Device and Materials Reliability 5 (1), 26-35, 2005
342005
Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions
HCP Movva, ME Ramón, CM Corbet, S Sonde, S Fahad Chowdhury, ...
Applied Physics Letters 101 (18), 183113, 2012
302012
Microstructure modified HfO/sub 2/using Zr addition with Ta/sub x/C/sub y/gate for improved device performance and reliability
RI Hegde, DH Triyoso, PJ Tobin, S Kalpat, ME Ramon, HH Tseng, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 35-38, 2005
272005
A compact model for graphene FETs for linear and non-linear circuits
KN Parrish, ME Ramón, SK Banerjee, D Akinwande
Proc. SISPAD, 75-78, 2012
262012
Hall mobility measurements in enhancement-mode GaAs field-effect transistors with gate dielectric
D Shahrjerdi, J Nah, B Hekmatshoar, T Akyol, M Ramon, E Tutuc, ...
Applied Physics Letters 97 (21), 213506, 2010
242010
Uniaxial-biaxial stress hybridization for super-critical strained-si directly on insulator (SC-SSOI) PMOS with different channel orientations.
AVY Thean, L Prabhu, V Vartanian, M Ramon, BY Nguyen, T White, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
242005
Performance of super-critical strained-Si directly on insulator (SC-SSOI) CMOS based on high-performance PD-SOI technology
AVY Thean, T White, M Sadaka, L McCormick, M Ramon, R Mora, ...
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 134-135, 2005
242005
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