| Positioning of self-assembled Ge islands on stripe-patterned Si (001) substrates Z Zhong, A Halilovic, M Mühlberger, F Schäffler, G Bauer Journal of applied physics 93 (10), 6258-6264, 2003 | 120 | 2003 |
| Development of a novel, low-viscosity UV-curable polymer system for UV-nanoimprint lithography M Vogler, S Wiedenberg, M Mühlberger, I Bergmair, T Glinsner, ... Microelectronic engineering 84 (5-8), 984-988, 2007 | 88 | 2007 |
| Lattice parameter of Si 1-x-y Ge x C y alloys D De Salvador, M Petrovich, M Berti, F Romanato, E Napolitani, A Drigo, ... Physical Review B 61 (19), 13005, 2000 | 85 | 2000 |
| Two-flux composite fermion series of the fractional quantum hall states in strained Si K Lai, W Pan, DC Tsui, S Lyon, M Mühlberger, F Schäffler Physical review letters 93 (15), 156805, 2004 | 80 | 2004 |
| Ge island formation on stripe-patterned Si (001) substrates Z Zhong, A Halilovic, M Mühlberger, F Schäffler, G Bauer Applied physics letters 82 (3), 445-447, 2003 | 79 | 2003 |
| Single and multilayer metamaterials fabricated by nanoimprint lithography I Bergmair, B Dastmalchi, M Bergmair, A Saeed, W Hilber, G Hesser, ... Nanotechnology 22 (32), 325301, 2011 | 76 | 2011 |
| A Moiré method for high accuracy alignment in nanoimprint lithography M Mühlberger, I Bergmair, W Schwinger, M Gmainer, R Schöftner, ... Microelectronic Engineering 84 (5-8), 925-927, 2007 | 58 | 2007 |
| Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high-mobility strained Si quantum well K Lai, W Pan, DC Tsui, SA Lyon, M Mühlberger, F Schäffler Physical Review B 72 (8), 081313, 2005 | 54 | 2005 |
| UV-NIL with working stamps made from Ormostamp M Mühlberger, I Bergmair, A Klukowska, A Kolander, H Leichtfried, ... Microelectronic Engineering 86 (4-6), 691-693, 2009 | 53 | 2009 |
| Lateral quantum dots in Si/SiGe realized by a Schottky split-gate technique T Berer, D Pachinger, G Pillwein, M Mühlberger, H Lichtenberger, ... Semiconductor science and technology 22 (1), S137, 2006 | 51 | 2006 |
| Lateral quantum dots in Si∕ SiGe realized by a Schottky split-gate technique T Berer, D Pachinger, G Pillwein, M Mühlberger, H Lichtenberger, ... Applied physics letters 88 (16), 162112, 2006 | 51 | 2006 |
| Lateral quantum dots in Si/SiGe realized by a Schottky split-gate technique T Berer, D Pachinger, G Pillwein, M Mühlberger, H Lichtenberger, ... Applied Physics Letters 88, 162112, 2006 | 51 | 2006 |
| Ordering of Si0. 55Ge0. 45 islands on vicinal Si (001) substrates: interplay between kinetic step bunching and strain-driven island growth H Lichtenberger, M Mühlberger, F Schäffler Applied Physics Letters 86 (13), 131919, 2005 | 42 | 2005 |
| Spin lifetimes and g-factor tuning in Si/SiGe quantum wells W Jantsch, Z Wilamowski, N Sandersfeld, M Mühlberger, F Schäffler Physica E: Low-dimensional Systems and Nanostructures 13 (2-4), 504-507, 2002 | 42 | 2002 |
| UV nanoimprint lithography for the realization of large-area ordered SiGe/Si (001) island arrays E Lausecker, M Brehm, M Grydlik, F Hackl, I Bergmair, M Muhlberger, ... Applied Physics Letters 98 (14), 143101-143101-3, 2011 | 41 | 2011 |
| Novel transparent hybrid polymer working stamp for UV-imprinting A Klukowska, A Kolander, I Bergmair, M Mühlberger, H Leichtfried, ... Microelectronic Engineering 86 (4-6), 697-699, 2009 | 38 | 2009 |
| growth instabilities on vicinal Si(001) substrates: Kinetic vs. strain-induced effects C Schelling, M Mühlberger, G Springholz, F Schäffler Physical Review B 64 (4), 041301, 2001 | 37 | 2001 |
| Si 1-x Ge x growth instabilities on vicinal Si (001) substrates: Kinetic vs. strain-induced effects C Schelling, M Mühlberger, G Springholz, F Schäffler Physical Review B 64 (4), 041301, 2001 | 37 | 2001 |
| Anisotropy of g-factor and electron spin resonance linewidth in modulation doped quantum wells H Malissa, W Jantsch, M Mühlberger, F Schäffler, Z Wilamowski, ... Applied physics letters 85 (10), 1739-1741, 2004 | 36 | 2004 |
| Linear temperature dependence of the conductivity in Si two-dimensional electrons near the apparent metal-to-insulator transition K Lai, W Pan, DC Tsui, S Lyon, M Mühlberger, F Schäffler Physical Review B 75 (3), 033314, 2007 | 35 | 2007 |
Friedrich SchäfflerJohannes Kepler University Linz (JKU), AustriaVerified email at jku.at
