| 200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration X Li, M Van Hove, M Zhao, K Geens, VP Lempinen, J Sormunen, ... IEEE Electron Device Letters 38 (7), 918-921, 2017 | 128 | 2017 |
| GaN-on-SOI: Monolithically integrated all-GaN ICs for power conversion X Li, N Amirifar, K Geens, M Zhao, W Guo, H Liang, S You, N Posthuma, ... 2019 IEEE International Electron Devices Meeting (IEDM), 4.4. 1-4.4. 4, 2019 | 79 | 2019 |
| Demonstration of GaN integrated half-bridge with on-chip drivers on 200-mm engineered substrates X Li, K Geens, W Guo, S You, M Zhao, D Fahle, V Odnoblyudov, ... IEEE Electron Device Letters 40 (9), 1499-1502, 2019 | 64 | 2019 |
| Observation of Dynamic VTH of p-GaN Gate HEMTs by Fast Sweeping Characterization X Li, B Bakeroot, Z Wu, N Amirifar, S You, N Posthuma, M Zhao, H Liang, ... IEEE Electron Device Letters 41 (4), 577-580, 2020 | 60 | 2020 |
| Suppression of the backgating effect of enhancement-mode p-GaN HEMTs on 200-mm GaN-on-SOI for monolithic integration X Li, M Van Hove, M Zhao, K Geens, W Guo, S You, S Stoffels, ... IEEE electron device letters 39 (7), 999-1002, 2018 | 57 | 2018 |
| Investigation on carrier transport through AlN nucleation layer from differently doped Si (111) substrates X Li, M Van Hove, M Zhao, B Bakeroot, S You, G Groeseneken, ... IEEE Transactions on Electron Devices 65 (5), 1721-1727, 2018 | 43 | 2018 |
| Impact of substrate resistivity on the vertical leakage, breakdown, and trapping in GaN-on-Si E-mode HEMTs M Borga, M Meneghini, S Stoffels, X Li, N Posthuma, M Van Hove, ... IEEE Transactions on Electron Devices 65 (7), 2765-2770, 2018 | 41 | 2018 |
| Undoped Ge0.92Sn0.08 quantum well PMOSFETs on (001), (011) and (111) substrates with in situ Si2H6 passivation: High hole mobility and dependence of … M Liu, G Han, Y Liu, C Zhang, H Wang, X Li, J Zhang, B Cheng, Y Hao 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 34 | 2014 |
| Investigating the current collapse mechanisms of p-GaN gate HEMTs by different passivation dielectrics X Li, N Posthuma, B Bakeroot, H Liang, S You, Z Wu, M Zhao, ... IEEE Transactions on Power Electronics 36 (5), 4927-4930, 2020 | 29 | 2020 |
| Integration of 650 V GaN power ICs on 200 mm engineered substrates X Li, K Geens, D Wellekens, M Zhao, A Magnani, N Amirifar, B Bakeroot, ... IEEE Transactions on Semiconductor Manufacturing 33 (4), 534-538, 2020 | 22 | 2020 |
| Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs M Borga, M Meneghini, S Stoffels, M Van Hove, M Zhao, X Li, ... Microelectronics Reliability 88, 584-588, 2018 | 22 | 2018 |
| Current-collapse suppression of high-performance lateral AlGaN/GaN Schottky barrier diodes by a thick GaN cap layer T Zhang, Y Lv, R Li, Y Zhang, Y Zhang, X Li, J Zhang, Y Hao IEEE Electron Device Letters 42 (4), 477-480, 2021 | 21 | 2021 |
| Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI X Li, M Zhao, B Bakeroot, K Geens, W Guo, S You, S Stoffels, ... IEEE Transactions on Electron Devices 66 (1), 553-560, 2018 | 21 | 2018 |
| Low ohmic‐contact resistance in AlGaN/GaN high electron mobility transistors with holes etching in ohmic region C Wang, Y He, X Zheng, M Zhao, M Mi, X Li, W Mao, X Ma, Y Hao Electronics Letters 51 (25), 2145-2147, 2015 | 16 | 2015 |
| Integration of GaN analog building blocks on p-GaN wafers for GaN ICs X Li, K Geens, N Amirifar, M Zhao, S You, N Posthuma, H Liang, ... Journal of Semiconductors 42 (2), 024103, 2021 | 15 | 2021 |
| Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses Y He, P Li, C Wang, X Li, S Zhao, M Mi, J Pei, J Zhang, X Ma, Y Hao Applied Physics Letters 107 (6), 2015 | 15 | 2015 |
| 650 V p-GaN gate power HEMTs on 200 mm engineered substrates K Geens, X Li, M Zhao, W Guo, D Wellekens, N Posthuma, D Fahle, ... 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019 | 14 | 2019 |
| Current transport mechanism of high-performance novel GaN MIS diode T Zhang, Y Zhang, J Zhang, X Li, Y Lv, Y Hao IEEE Electron Device Letters 42 (3), 304-307, 2021 | 13 | 2021 |
| Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications M Borga, C De Santi, S Stoffels, B Bakeroot, X Li, M Zhao, M Van Hove, ... IEEE Transactions on Electron Devices 67 (2), 595-599, 2020 | 13 | 2020 |
| Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process Y Yamashita, S Stoffels, N Posthuma, K Geens, X Li, J Furuta, ... IEICE Electronics Express 16 (22), 20190516-20190516, 2019 | 12 | 2019 |
