| Growth defects in GaN films on sapphire: The probable origin of threading dislocations XJ Ning, FR Chien, P Pirouz, JW Yang, MA Khan Journal of materials research 11 (3), 580-592, 1996 | 424 | 1996 |
| Epitaxial growth of 3C–SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition CA Zorman, AJ Fleischman, AS Dewa, M Mehregany, C Jacob, S Nishino, ... Journal of Applied Physics 78 (8), 5136-5138, 1995 | 301 | 1995 |
| The microstructure of SCS-6 SiC fiber XJ Ning, P Pirouz Journal of Materials Research 6 (10), 2234-2248, 1991 | 287 | 1991 |
| Chemomechanical polishing of silicon carbide L Zhou, V Audurier, P Pirouz, JA Powell Journal of the Electrochemical Society 144 (6), L161, 1997 | 271 | 1997 |
| Polytypic transformations in SiC: the role of TEM P Pirouz, JW Yang Ultramicroscopy 51 (1-4), 189-214, 1993 | 254 | 1993 |
| Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias A Galeckas, J Linnros, P Pirouz Applied physics letters 81 (5), 883-885, 2002 | 232 | 2002 |
| Stacking fault energy of 6H-SiC and 4H-SiC single crystals MH Hong, AV Samant, P Pirouz Philosophical Magazine A 80 (4), 919-935, 2000 | 220 | 2000 |
| Controlled growth of 3C‐SiC and 6H‐SiC films on low‐tilt‐angle vicinal (0001) 6H‐SiC wafers JA Powell, JB Petit, JH Edgar, IG Jenkins, LG Matus, JW Yang, P Pirouz, ... Applied physics letters 59 (3), 333-335, 1991 | 195 | 1991 |
| Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation RS Okojie, M Xhang, P Pirouz, S Tumakha, G Jessen, LJ Brillson Applied Physics Letters 79 (19), 3056-3058, 2001 | 192 | 2001 |
| Antiphase boundaries in epitaxially grown β‐SiC P Pirouz, CM Chorey, JA Powell Applied physics letters 50 (4), 221-223, 1987 | 177 | 1987 |
| Growth of high quality 6H‐SiC epitaxial films on vicinal (0001) 6H‐SiC wafers JA Powell, DJ Larkin, LG Matus, WJ Choyke, JL Bradshaw, L Henderson, ... Applied physics letters 56 (15), 1442-1444, 1990 | 173 | 1990 |
| On transition temperatures in the plasticity and fracture of semiconductors P Pirouz, JL Demenet, MH Hong Philosophical Magazine A 81 (5), 1207-1227, 2001 | 159 | 2001 |
| Synchroshear transformations in Laves phases PM Hazzledine, P Pirouz Scripta metallurgica et materialia 28 (10), 1277-1282, 1993 | 159 | 1993 |
| Bright visible photoluminescence from silica nanotube flakes prepared by the sol–gel template method M Zhang, E Ciocan, Y Bando, K Wada, LL Cheng, P Pirouz Applied physics letters 80 (3), 491-493, 2002 | 153 | 2002 |
| Nucleation and growth of deformation twins: a perspective based on the double-cross-slip mechanism of deformation twinning KPD Lagerlöf, J Castaing, P Pirouz, AH Heuer Philosophical Magazine A 82 (15), 2841-2854, 2002 | 147 | 2002 |
| Recombination-induced stacking faults: evidence for a general mechanism in hexagonal SiC A Galeckas, J Linnros, P Pirouz Physical review letters 96 (2), 025502, 2006 | 145 | 2006 |
| Orientation relationship between chemical vapor deposited diamond and graphite substrates Z Li, L Wang, T Suzuki, A Argoitia, P Pirouz, JC Angus Journal of applied physics 73 (2), 711-715, 1993 | 131 | 1993 |
| HRTEM study of a Cu/Al2O3 interface F Ernst, P Pirouz, AH Heuer Philosophical Magazine A 63 (2), 259-277, 1991 | 125 | 1991 |
| The formation mechanism of planar defects in compound semiconductors grown epitaxially on {100} silicon substrates F Ernst, P Pirouz Journal of Materials Research 4 (4), 834-842, 1989 | 121 | 1989 |
| Deformation mode in silicon, slip or twinning? P Pirouz Scripta metallurgica 21 (11), 1463-1468, 1987 | 120 | 1987 |
