| State of the art of high temperature power electronics C Buttay, D Planson, B Allard, D Bergogne, P Bevilacqua, C Joubert, ... Materials Science and Engineering: B 176 (4), 283-288, 2011 | 436 | 2011 |
| Electrothermal modeling of IGBTs: Application to short-circuit conditions A Ammous, K Ammous, H Morel, B Allard, D Bergogne, F Sellami, ... IEEE Transactions on Power Electronics 15 (4), 778-790, 2000 | 82 | 2000 |
| Towards an airborne high temperature SiC inverter D Bergogne, H Morel, D Planson, D Tournier, P Bevilacqua, B Allard, ... 2008 IEEE Power Electronics Specialists Conference, 3178-3183, 2008 | 62 | 2008 |
| Normally-On SiC JFETs in power converters: Gate driver and safe operation D Bergogne, D Risaletto, F Dubois, A Hammoud, H Morel, P Bevilacqua, ... 2010 6th International Conference on Integrated Power Electronics Systems, 1-6, 2010 | 43 | 2010 |
| Power converter's optimisation and design. Discrete cost function with genetic based algorithms H Helali, D Bergogne, JBH Slama, H Morel, P Bevilacqua, B Allard, ... 2005 European Conference on Power Electronics and Applications, 7 pp.-P. 7, 2005 | 37 | 2005 |
| Error in estimation of power switching losses based on electrical measurements K Ammous, B Allard, O Brevet, HE Omari, D Bergogne, D Ligot, ... 2000 IEEE 31st Annual Power Electronics Specialists Conference. Conference …, 2000 | 35 | 2000 |
| Ultrafast safety system to turn-off normally on SiC JFETs F Dubois, D Bergogne, D Risaletto, R Perrin, A Zaoui, H Morel, R Meuret Proceedings of the 2011 14th European Conference on Power Electronics and …, 2011 | 34 | 2011 |
| An estimation method of the channel temperature of power MOS devices D Bergogne, B Allard, H Morel 2000 IEEE 31st Annual Power Electronics Specialists Conference. Conference …, 2000 | 34 | 2000 |
| Avalanche behavior of low-voltage power MOSFETs C Buttay, TB Salah, D Bergogne, B Allard, H Morel, JP Chante IEEE Power Electronics Letters 2 (3), 104-107, 2004 | 23 | 2004 |
| 300 C operating junction temperature inverter leg investigations D Bergogne, P Bevilacqua, S M'Rad, D Planson, H Morel, B Allard, ... European Power Electronics and applications, 2005 European Conference on,, 8 …, 2005 | 22 | 2005 |
| State of the art of dv/dt and di/dt control of insulated gate power switches P Lefranc, D Bergogne Proceedings of the Conference Captech IAP1, Power Supply and Energy …, 2007 | 21 | 2007 |
| Thermal stability of silicon carbide power JFETs C Buttay, R Ouaida, H Morel, D Bergogne, C Raynaud, F Morel IEEE transactions on Electron Devices 60 (12), 4191-4198, 2013 | 20 | 2013 |
| Active protections for normally-on SiC JFETs F Dubois, D Risaletto, D Bergogne, H Morel, C Buttay, R Meuret Proceedings of the 2011 14th European Conference on Power Electronics and …, 2011 | 20 | 2011 |
| Statistical study of nanocrystalline alloy cut cores from two different manufacturers F Sixdenier, J Morand, OA Salvado, D Bergogne IEEE transactions on magnetics 50 (4), 1-4, 2014 | 16 | 2014 |
| Fast over-current protection of high power IGBT modules L Pierre, B Dominique, M Herve, A Bruno, R Jean-Francois 2005 European Conference on Power Electronics and Applications, 10 pp.-P. 10, 2005 | 16 | 2005 |
| From epitaxy to converters topologies what issues for 200 mm GaN/Si? L Di Cioccio, E Morvan, M Charles, P Perichon, A Torres, F Ayel, ... 2015 IEEE International Electron Devices Meeting (IEDM), 16.5. 1-16.5. 4, 2015 | 15 | 2015 |
| The single reference bi-directional gan hemt ac switch D Bergogne, O Ladhari, LSC Gillot, R Escoffier, W Vandendaele 2015 17th European Conference on Power Electronics and Applications (EPE'15 …, 2015 | 15 | 2015 |
| High-temperature behavior of SiC power diodes C Buttay, C Raynaud, H Morel, M Lazar, G Civrac, D Bergogne Proceedings of the 2011 14th European Conference on Power Electronics and …, 2011 | 15 | 2011 |
| A multi-physics model of the VJFET with a lateral channel M Hervé, H Youness, T Dominique, R Rémi, D Fabien, R Damien, ... Proceedings of the 2011 14th European Conference on Power Electronics and …, 2011 | 15 | 2011 |
| Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT) P Lefranc, D Planson, H Morel, D Bergogne Solid-state electronics 53 (9), 944-954, 2009 | 15 | 2009 |
Hervé MorelSenior Researcher (Directeur de Recherche), Univ Lyon, CNRS, INSA Lyon, Lab. AmpèreVerified email at insa-lyon.fr
