L. Ralph Dawson
L. Ralph Dawson
Research Professor of ECE, University of New Mexico
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Zitiert von
Zitiert von
structure based on type-II strained layer superlattices
JB Rodriguez, E Plis, G Bishop, YD Sharma, H Kim, LR Dawson, ...
Applied Physics Letters 91 (4), 043514, 2007
Strain relief by periodic misfit arrays for low defect density GaSb on GaAs
SH Huang, G Balakrishnan, A Khoshakhlagh, A Jallipalli, LR Dawson, ...
Applied physics letters 88 (13), 131911, 2006
Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices
IJ Fritz, ST Picraux, LR Dawson, TJ Drummond, WD Laidig, NG Anderson
Applied physics letters 46 (10), 967-969, 1985
Controversy of critical layer thickness for InGaAs/GaAs strained‐layer epitaxy
PL Gourley, IJ Fritz, LR Dawson
Applied physics letters 52 (5), 377-379, 1988
Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures
IJ Fritz, PL Gourley, LR Dawson
Applied physics letters 51 (13), 1004-1006, 1987
Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers
N Gautam, HS Kim, MN Kutty, E Plis, LR Dawson, S Krishna
Applied Physics Letters 96 (23), 231107, 2010
Mid-IR focal plane array based on type-II strain layer superlattice detector with design
HS Kim, E Plis, JB Rodriguez, GD Bishop, YD Sharma, LR Dawson, ...
Applied Physics Letters 92 (18), 183502, 2008
Light‐hole conduction in InGaAs/GaAs strained‐layer superlattices
JE Schirber, IJ Fritz, LR Dawson
Applied physics letters 46 (2), 187-189, 1985
Midwave (4 μm) infrared lasers and light‐emitting diodes with biaxially compressed InAsSb active regions
SR Kurtz, RM Biefeld, LR Dawson, KC Baucom, AJ Howard
Applied physics letters 64 (7), 812-814, 1994
Bias dependent dual band response from type II strain layer superlattice detectors
A Khoshakhlagh, JB Rodriguez, E Plis, GD Bishop, YD Sharma, HS Kim, ...
Applied Physics Letters 91 (26), 263504, 2007
Ordering-induced band-gap reduction in InAs 1− x Sb x (x≊ 0.4) alloys and superlattices
SR Kurtz, LR Dawson, RM Biefeld, DM Follstaedt, BL Doyle
Physical Review B 46 (3), 1909, 1992
III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs
G Balakrishnan, J Tatebayashi, A Khoshakhlagh, SH Huang, A Jallipalli, ...
Applied physics letters 89 (16), 161104, 2006
High operating temperature interband cascade midwave infrared detector based on type-II InAs/GaSb strained layer superlattice
N Gautam, S Myers, AV Barve, B Klein, EP Smith, DR Rhiger, LR Dawson, ...
Applied Physics Letters 101 (2), 021106, 2012
wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer
G Balakrishnan, S Huang, TJ Rotter, A Stintz, LR Dawson, KJ Malloy, ...
Applied physics letters 84 (12), 2058-2060, 2004
InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers
YC Xin, LG Vaughn, LR Dawson, A Stintz, Y Lin, LF Lester, DL Huffaker
Journal of applied physics 94 (3), 2133-2135, 2003
Growth mechanisms of highly mismatched AlSb on a Si substrate
G Balakrishnan, S Huang, LR Dawson, YC Xin, P Conlin, DL Huffaker
Applied Physics Letters 86 (3), 034105, 2005
Performance improvement of InAs/GaSb strained layer superlattice detectors by reducing surface leakage currents with SU-8 passivation
HS Kim, E Plis, A Khoshakhlagh, S Myers, N Gautam, YD Sharma, ...
Applied Physics Letters 96 (3), 033502, 2010
Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materials
A Jallipalli, G Balakrishnan, SH Huang, A Khoshakhlagh, LR Dawson, ...
Journal of Crystal Growth 303 (2), 449-455, 2007
Near-equilibrium LPE growth of GaAs-Ga1− xAlxAs double heterostructures
LR Dawson
Journal of Crystal Growth 27, 86-96, 1974
Strain measurements by channeling angular scans
ST Picraux, LR Dawson, GC Osbourn, RM Biefeld, WK Chu
Applied physics letters 43 (11), 1020-1022, 1983
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