High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes JH Na, M Kitamura, Y Arakawa
Applied Physics Letters 93 (6), 063501, 2008
190 2008 Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field JW Robinson, JH Rice, KH Lee, JH Na, RA Taylor, DG Hasko, RA Oliver, ...
Applied Physics Letters 86 (21), 213103, 2005
69 2005 Threshold voltage control of bottom-contact M Kitamura, Y Kuzumoto, S Aomori, M Kamura, JH Na, Y Arakawa
Applied Physics Letters 94 (8), 65, 2009
67 2009 Organic/inorganic hybrid complementary circuits based on pentacene and amorphous indium gallium zinc oxide transistors JH Na, M Kitamura, Y Arakawa
Applied Physics Letters 93 (21), 213505, 2008
67 2008 Quantum dot emission from site-controlled PR Edwards, RW Martin, IM Watson, C Liu, RA Taylor, JH Rice, JH Na, ...
Applied Physics Letters 85 (19), 4281-4283, 2004
65 2004 Hybrid JH Na, M Kitamura, M Arita, Y Arakawa
Applied Physics Letters 95 (25), 329, 2009
61 2009 Bottom-contact fullerene M Kitamura, S Aomori, JH Na, Y Arakawa
Applied Physics Letters 93 (3), 269, 2008
50 2008 Simple analysis method for determining internal quantum efficiency and relative recombination ratios in light emitting diodes YS Yoo, TM Roh, JH Na, SJ Son, YH Cho
Applied Physics Letters 102 (21), 211107, 2013
44 2013 Registration of single quantum dots using cryogenic laser photolithography KH Lee, AM Green, RA Taylor, DN Sharp, J Scrimgeour, OM Roche, ...
Applied physics letters 88 (19), 193106, 2006
44 2006 Dependence of carrier localization in JH Na, RA Taylor, KH Lee, T Wang, A Tahraoui, P Parbrook, AM Fox, ...
Applied physics letters 89 (25), 253120, 2006
39 2006 Biexciton and exciton dynamics in single InGaN quantum dots JH Rice, JW Robinson, JH Na, KH Lee, RA Taylor, DP Williams, ...
Nanotechnology 16 (9), 1477, 2005
33 2005 Low-voltage-operating organic complementary circuits based on pentacene and C60 transistors JH Na, M Kitamura, Y Arakawa
Thin Solid Films 517 (6), 2079-2082, 2009
32 2009 High performance flexible pentacene thin-film transistors fabricated on titanium silicon oxide gate dielectrics JH Na, M Kitamura, D Lee, Y Arakawa
Applied physics letters 90 (16), 163514, 2007
32 2007 Effective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in field YS Yoo, JH Na, SJ Son, YH Cho
Scientific reports 6 (1), 1-9, 2016
30 2016 Luminescence properties of isolated InGaN/GaN quantum dots RW Martin, PR Edwards, RA Taylor, JH Rice, JH Na, JW Robinson, ...
physica status solidi (a) 202 (3), 372-376, 2005
30 2005 Luminescence properties of isolated InGaN/GaN quantum dots RW Martin, PR Edwards, RA Taylor, JH Rice, JH Na, JW Robinson, ...
physica status solidi (a) 202 (3), 372-376, 2005
30 2005 Polarity determination for GaN/AlGaN/GaN heterostructures grown on (0001) sapphire by molecular beam epitaxy YS Park, HS Lee, JH Na, HJ Kim, SM Si, HM Kim, TW Kang, JE Oh
Journal of applied physics 94 (1), 800-802, 2003
30 2003 High performance JH Na, M Kitamura, Y Arakawa
Applied Physics Letters 91 (19), 193501, 2007
29 2007 Time-resolved and time-integrated photoluminescence studies of coupled asymmetric GaN quantum discs embedded in AlGaN barriers JH Na, RA Taylor, JH Rice, JW Robinson, KH Lee, YS Park, CM Park, ...
Applied Physics Letters 86 (8), 083109, 2005
24 2005 Complementary two-input NAND gates with low-voltage-operating organic transistors on plastic substrates JH Na, M Kitamura, Y Arakawa
Applied physics express 1 (2), 021803, 2008
23 2008 