| Structural and electrical characteristics of lanthanum oxide formed on surface of LaB6 film by annealing A Igityan, Y Kafadaryan, N Aghamalyan, S Petrosyan, G Badalyan, ... Thin Solid Films 564, 415-418, 2014 | 8 | 2014 |
| STRUCTURAL CHARACTERISTICS OF La2O3 THIN FILM GROWN ON LaB6 YA Kafadaryan, SI Petrosyan, GR Badalyan, VG Lazaryan, GH Shirinyan, ... International Journal of Modern Physics: Conference Series 15, 61-66, 2012 | 7 | 2012 |
| Electrical and optical properties of lanthanum oxide-based films prepared by electron beam evaporation A Igityan, N Aghamalyan, S Petrosyan, I Gambaryan, G Badalyan, ... Applied Physics A 123, 1-6, 2017 | 6 | 2017 |
| The effect of bottom LaB6 electrode and La2O3 interlayer on resistance switching in devices based on Li‐doped ZnO films Y Kafadaryan, A Igityan, N Aghamalyan, S Petrosyan physica status solidi (a) 213 (6), 1592-1597, 2016 | 6 | 2016 |
| Resistivity switching properties of Li-doped ZnO films deposited on LaB6 electrode A Igityan, Y Kafadaryan, N Aghamalyan, S Petrosyan, G Badalyan, ... Thin Solid Films 595, 92-95, 2015 | 6 | 2015 |
| Study of the thermally processed lanthanum hexaboride surface AS Igityan, YA Kafadaryan, NR Aghamalyan, SI Petrosyan, GR Badalyan, ... Journal of Contemporary Physics (Armenian Academy of Sciences) 49, 277-285, 2014 | 6* | 2014 |
| Resistive Switching in Li‐Doped ZnO Films A Igityan, N Aghamalyan, S Petrosyan, G Badalyan, Y Kafadaryan physica status solidi (a) 215 (1), 1700353, 2018 | 3 | 2018 |
| Bipolar resistance switching characteristics of Ag/ZnO: Li/SnO2: F device on glass Y Kafadaryan, A Igityan, N Aghamalyan, S Petrosyan, I Gambaryan, ... Thin Solid Films 616, 815-819, 2016 | 3 | 2016 |
| Memristive effect in two-layered structures based on lithium doped ZnO films AS Igityan, NR Aghamalyan, SI Petrosyan, YA Kafadaryan Journal of Contemporary Physics (Armenian Academy of Sciences) 53, 58-64, 2018 | 2 | 2018 |
| Negative differential conductivity of lanthanum-oxide-based structures A Igityan, N Aghamalyan, R Hovsepyan, S Petrosyan, G Badalyan, ... Semiconductors 54, 163-168, 2020 | | 2020 |
| The Resistive Switching Behavior of ZnO Films Depending on Li Dopant Concentration and Electrode Materials A Igityan, Y Kafadaryan, N Aghamalyan, S Petrosyan Advances in Science and Technology 99, 75-80, 2017 | | 2017 |
| Resistive switching effect in metal–oxide–metal structures with ZnO: Li oxide layer AS Igityan Journal of Contemporary Physics (Armenian Academy of Sciences) 51, 168-173, 2016 | | 2016 |
| Resistive switching effect in metal–oxide–metal structures with ZnO: Li oxide layer AS Igityan Izvestiya National'noj Akademii Nauk Armenii. Fizika 51 (2), 227-234, 2015 | | 2015 |
| No New Armenia without New Energy A IGITYAN | | |
| Informalization of work: Challenges and Strategies for the Trade Union Movements in India and Nigeria D Pillay, A Igityan, G Sikazwe, J Kikekon, K Hartmann, V Kamble | | |
Ruben Hovsepyan (R.K. Ovsepyan)Институт Физических ИсследованийVerified email at ipr.sci.am
Ruben Hovsepyan (R.K. Ovsepyan)Институт Физических ИсследованийVerified email at ipr.sci.am