Gwan-Hyoung Lee
Gwan-Hyoung Lee
Associate Professor, Seoul National University
Verified email at - Homepage
Cited by
Cited by
Tightly bound trions in monolayer MoS2
KF Mak, K He, C Lee, GH Lee, J Hone, TF Heinz, J Shan
Nature materials 12 (3), 207-211, 2012
Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
AM van der Zande, PY Huang, DA Chenet, TC Berkelbach, YM You, ...
Nature materials 12, 554–561, 2013
Atomically thin pn junctions with van der Waals heterointerfaces
CH Lee, GH Lee, AM van der Zande, W Chen, Y Li, M Han, X Cui, G Arefe, ...
Nature Nanotechnology 9, 676-681, 2014
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
X Cui, GH Lee, YD Kim, G Arefe, PY Huang, CH Lee, DA Chenet, X Zhang, ...
Nature Nanotechnology, 2015
Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
GH Lee, YJ Yu, X Cui, N Petrone, CH Lee, MS Choi, DY Lee, C Lee, ...
ACS nano 7 (9), 7931-7936, 2013
High-Strength Chemical-Vapor–Deposited Graphene and Grain Boundaries
GH Lee, RC Cooper, SJ An, S Lee, A van der Zande, N Petrone, ...
Science 340 (6136), 1073-1076, 2013
Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
MS Choi, GH Lee, YJ Yu, DY Lee, SH Lee, P Kim, J Hone, WJ Yoo
Nature communications 4, 1624, 2013
Effect of defects on the intrinsic strength and stiffness of graphene
A Zandiatashbar, GH Lee, SJ An, S Lee, N Mathew, M Terrones, ...
Nature communications 5, 3186, 2014
Electron tunneling through atomically flat and ultrathin hexagonal boron nitride
GH Lee, YJ Yu, C Lee, C Dean, KL Shepard, P Kim, J Hone
Applied Physics Letters 99 (24), 243114, 2011
Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage
GH Lee, X Cui, YD Kim, G Arefe, X Zhang, CH Lee, F Ye, K Watanabe, ...
ACS nano 9 (7), 7019-7026, 2015
Graphene mechanical oscillators with tunable frequency
C Chen, S Lee, VV Deshpande, GH Lee, M Lekas, K Shepard, J Hone
Nature nanotechnology 8 (12), 923-927, 2013
Measurement of Lateral and Interfacial Thermal Conductivity of Single-and Bilayer MoS2 and MoSe2 Using Refined Optothermal Raman Technique
X Zhang, D Sun, Y Li, GH Lee, X Cui, D Chenet, Y You, TF Heinz, ...
ACS Applied Materials & Interfaces 7 (46), 25923-25929, 2015
Graphene based heterostructures
C Dean, AF Young, L Wang, I Meric, GH Lee, K Watanabe, T Taniguchi, ...
Solid State Communications 152 (15), 1275-1282, 2012
Effect of surface morphology on friction of graphene on various substrates
DH Cho, L Wang, JS Kim, GH Lee, ES Kim, S Lee, SY Lee, J Hone, C Lee
Nanoscale 5 (7), 3063-3069, 2013
Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices
S Rathi, I Lee, D Lim, J Wang, Y Ochiai, N Aoki, K Watanabe, T Taniguchi, ...
Nano letters 15 (8), 5017-5024, 2015
Inking Elastomeric Stamps with Micro‐Patterned, Single Layer Graphene to Create High‐Performance OFETs
SJ Kang, B Kim, KS Kim, Y Zhao, Z Chen, GH Lee, J Hone, P Kim, ...
Advanced Materials 23 (31), 3531-3535, 2011
Sintering of nano-sized WC–Co powders produced by a gas reduction–carburization process
GH Lee, S Kang
Journal of alloys and compounds 419 (1), 281-289, 2006
Thickness-dependent Schottky barrier height of MoS2 field-effect transistors
J Kwon, JY Lee, YJ Yu, CH Lee, X Cui, J Hone, GH Lee
Nanoscale 9 (18), 6151-6157, 2017
Effect of local environment and Sm 3+-codoping on the luminescence properties in the Eu 3+-doped potassium tungstate phosphor for white LEDS
GH Lee, TH Kim, C Yoon, S Kang
Journal of Luminescence 128 (12), 1922-1926, 2008
Growth and Phase Transformation of Nanometer‐Sized Titanium Oxide Powders Produced by the Precipitation Method
GH Lee, JM Zuo
Journal of the American Ceramic Society 87 (3), 473-479, 2004
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