| Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT TR Lenka, AK Panda Semiconductors 45 (5), 650-656, 2011 | 101 | 2011 |
| DC and high-frequency characteristics of GaN-based IMPATTs AK Panda, D Pavlidis, E Alekseev IEEE Transactions on Electron Devices 48 (4), 820-823, 2001 | 82 | 2001 |
| An extremely low noise heterojunction IMPATT JK Mishra, AK Panda, GN Dash IEEE transactions on electron devices 44 (12), 2143-2148, 1997 | 47 | 1997 |
| Noise in mixed tunneling avalanche transit time (MITATT) diodes GN Dash, JK Mishra, AK Panda Solid-State Electronics 39 (10), 1473-1479, 1996 | 45 | 1996 |
| Noise characteristics of GaN-based IMPATTs AK Panda, D Pavlidis, EA Alekseev IEEE Transactions on Electron Devices 48 (7), 1473-1475, 2001 | 39 | 2001 |
| AlGaN/GaN-based HEMT on SiC substrate for microwave characteristics using different passivation layers TR Lenka, AK Panda Pramana 79, 151-163, 2012 | 36 | 2012 |
| Software reliability allocation of digital relay for transmission line protection using a combined system hierarchy and fault tree approach DS Roy, DK Mohanta, AK Panda IET software 2 (5), 437-445, 2008 | 35 | 2008 |
| Computer-aided studies on the wide-band microwave characteristics of a silicon double avalanche region (DAR) diode AK Panda, GN Dash, SP Pati Semiconductor science and technology 10 (6), 854, 1995 | 34 | 1995 |
| Development of chemical oxygen on demand (COD) soft sensor using edge intelligence AS Pattanayak, BS Pattnaik, SK Udgata, AK Panda IEEE Sensors Journal 20 (24), 14892-14902, 2020 | 32 | 2020 |
| Enhancement of multisubband electron mobility in parabolic AlxGa1− xAs-GaAs double quantum well structures T Sahu, S Palo, AK Panda Journal of Applied Physics 113 (8), 2013 | 31 | 2013 |
| FPGA design of a fast 32-bit floating point multiplier unit A Jain, B Dash, AK Panda, M Suresh 2012 International Conference on Devices, Circuits and Systems (ICDCS), 545-547, 2012 | 31 | 2012 |
| Role of nanoscale AlN and InN for the microwave characteristics of AlGaN/(Al, In) N/GaN-based HEMT TR Lenka, AK Panda Semiconductors 45, 1211-1218, 2011 | 30 | 2011 |
| Performance enhancement of triple material double gate TFET with heterojunction and heterodielectric P Vimala, TSA Samuel, D Nirmal, AK Panda Solid State Electronics Letters 1 (2), 64-72, 2019 | 28 | 2019 |
| RF and microwave characteristics of a 10 nm thick InGaN-channel gate recessed HEMT TR Lenka, GN Dash, AK Panda Journal of Semiconductors 34 (11), 114003, 2013 | 28 | 2013 |
| Choice of detection parameters on fault detection in wireless sensor networks: A multiobjective optimization approach A Mahapatro, AK Panda Wireless personal communications 78 (1), 649-669, 2014 | 27 | 2014 |
| Effect of structural parameters on 2DEG density and C~V characteristics of AlxGa1−xN/AlN/GaN-based HEMT TR Lenka, AK Panda NISCAIR-CSIR, India, 2011 | 27 | 2011 |
| Machine learning based soft sensor model for BOD estimation using intelligence at edge BS Pattnaik, AS Pattanayak, SK Udgata, AK Panda Complex & Intelligent Systems 7 (2), 961-976, 2021 | 26 | 2021 |
| Enhancement of multisubband electron mobility in square-parabolic asymmetric double quantum well structure N Sahoo, AK Panda, T Sahu Superlattices and Microstructures 105, 11-21, 2017 | 21 | 2017 |
| Self-Consistent Subband Calculations of AlxGa1-xN/(AlN)/GaN-Based High Electron Mobility Transistor TR Lenka, AK Panda Advanced Materials Research 159, 342-347, 2011 | 18 | 2011 |
| Enhancement of electron mobility in asymmetric coupled quantum well structures S Das, RK Nayak, T Sahu, AK Panda Journal of Applied Physics 115 (7), 2014 | 17 | 2014 |
Prof. Gananath DashSambalpur UniversityBestätigte E-Mail-Adresse bei ieee.org
