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Vladimir Gavryushin
Vladimir Gavryushin
Habil. Dr., Prof.
Bestätigte E-Mail-Adresse bei cablenet.lt
Titel
Zitiert von
Zitiert von
Jahr
Characterization of intrinsic and impurity deep levels in ZnSe and ZnO crystals by nonlinear spectroscopy
V Gavryushin, G Račiukaitis, D Juodžbalis, A Kazlauskas, V Kubertavičius
Journal of crystal growth 138 (1-4), 924-933, 1994
841994
Luminescent and nonlinear spectroscopy of recombination centers in isovalent doped ZnSe: Te crystals
R Baltramiejūnas, VD Ryzhikov, V Gavryushin, A Kazlauskas, ...
Journal of luminescence 52 (1-4), 71-81, 1992
451992
Light absorption by nonequilibrium, two-photon-generated, free and localized carriers in ZnTe single crystals
RA Baltrameyunas, YY Vaitkus, V Gavryushin
Soviet Physics—JETP 60, 43-48, 1984
281984
Methodology of medical diagnostics of human tissue by fluorescence
V Gavryushin, J Vaitkus, A Vaitkuviene
Lithuania J Physics 40 (4), 232-236, 2000
172000
Centers of radiative and nonradiative recombination in isoelectronically doped ZnSe: Te crystals
R Baltramiejūnas, VD Ryzhikov, G Račiukaitis, V Gavryushin, ...
Physica B: Condensed Matter 185 (1-4), 245-249, 1993
171993
Nonlinear absorption spectroscopy study of deep levels in single crystals
RA Baltrameyunas, R Baubinas, YY Vaĭtkus, V Gavryushin, ...
Fizika Tverdogo Tela 27 (2), 371-378, 1985
161985
Spectral and polarizational investigations of two-photon absorption in semiconductors of group A2B6
R Baltramiejunas, J Vaitkus, J Višcakas
Izvestiya Akademii Nauk SSSR 46 (8), 1442-1451, 1982
141982
Giant nonlinear losses in GaSe crystals under double two-photon resonant conditions. Valence band structure from induced free carrier absorption
R Baltramiejūnas, V Gavryushin, G Račiukaitis
Solid state communications 80 (4), 303-306, 1991
131991
Emission properties of ZnSe scintillation crystals co-doped by oxygen and aluminum
D Shevchenko, V Gavryushin, J Mickevičius, N Starzhinskiy, I Zenya, ...
Journal of luminescence 143, 473-478, 2013
122013
Спектроскопия глубоких центров в монокристаллах ZnSe: Те методом лазерной модуляции двухступенчатого поглощения
R Baltrameyunas, V Gavryushin, G Raciukaitis, V Ryzhikov, A Kazlauskas, ...
Fizika i Tekhnika Poluprovodnikov 22 (7), 1163-1170, 1988
121988
Stoichiometry of CdS crystals and their optical and lasing properties
A Kazlauskas, V Gavryushin, G Račiukaitis, O Makienko
Journal of crystal growth 146 (1-4), 59-64, 1995
111995
Investigations of the deep levels in single crystals of ZnSe by method of nonlinear absorption spectroscopy
R Baltramiejunas, R Baubinas, J Vaitkus, V Gavryushin, G Raciukaitis
Soviet Physics, Solid State 27, 227-231, 1985
101985
Influence of impurities on the two-photon absorption spectrum of ZnSe single crystals
R Baltrameyunas, Y Vaitkus, V Gavryushin
Soviet Physics-Solid State 18 (10), 1723-1725, 1976
101976
Graphene brillouin zone and electronic energy dispersion
V Gavryushin
Wolfram Demonstrations Project, 2010
92010
Strong photoacoustic pulses generated in TlGaSe2 layered crystals
V Grivickas, V Bikbajevas, V Gavryushin, J Linnros
Journal of Physics: Conference Series 100 (4), 042007, 2008
82008
Induced Absorption Spectroscopy by Lattice Defects in Sillenite‐Type Crystals
SM Efendiev, V Gavryushin, G Raciukaitis, VE Bagiev, V Kazlauskas, ...
physica status solidi (b) 162 (1), 281-288, 1990
81990
Nonlinear spectroscopy of deep levels in wide-gap II–VI semiconductors
R Baltramiejũnas, V Gavryushin
Journal of crystal growth 101 (1-4), 699-704, 1990
81990
NONLINEAR PROCESSES OF LIGHT-ABSORPTION AND THEIR CONCURRENCES IN AIIBVI AND AIIIBVI GROUP SEMICONDUCTORS
R Baltrameyunas, Y Vaitkus, VI GAVRYUSHIN
IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA 42 (12), 2539-2546, 1978
81978
EFFECT OF IMPURITIES ON 2-PHOTON ABSORPTION IN CDS SINGLE-CRYSTALS CDS
R Baltrameyunas, V Gavryushin, Y Vaitkus
FIZIKA TVERDOGO TELA 18 (4), 1150-1153, 1976
81976
Room‐temperature photoluminescence in quasi‐2D TlGaSe2 and TlInS2semiconductors
V Grivickas, K Gulbinas, V Gavryushin, V Bikbajevas, OV Korolik, ...
physica status solidi (RRL)–Rapid Research Letters 8 (7), 639-642, 2014
72014
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