The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0. 53Ga0. 47As metal-oxide-semiconductor … HD Trinh, EY Chang, PW Wu, YY Wong, CT Chang, YF Hsieh, CC Yu, ...
Applied Physics Letters 97 (4), 2010
130 2010 Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage CT Chang, TH Hsu, EY Chang, YC Chen, HD Trinh, KJ Chen
Electronics letters 46 (18), 1280-1281, 2010
53 2010 Fabrication and characterization of n-In0. 4Ga0. 6N/p-Si solar cell BT Tran, EY Chang, HD Trinh, CT Lee, KC Sahoo, KL Lin, MC Huang, ...
Solar Energy Materials and Solar Cells 102, 208-211, 2012
52 2012 Electrical Characteristics of n, p-In0.53 Ga0.47 As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer QH Luc, EY Chang, HD Trinh, YC Lin, HQ Nguyen, YY Wong, HB Do, ...
IEEE Transactions on electron devices 61 (8), 2774-2778, 2014
45 2014 High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate SH Tang, EY Chang, M Hudait, JS Maa, CW Liu, GL Luo, HD Trinh, YH Su
Applied Physics Letters 98 (16), 2011
45 2011 Oxide film scheme for RRAM structure TH Dang, HL Lin, CY Tsai, CS Tsai, RL Lee
US Patent 9,431,609, 2016
43 2016 Effects of wet chemical and trimethyl aluminum treatments on the interface properties in atomic layer deposition of Al2O3 on InAs HD Trinh, EY Chang, YY Wong, CC Yu, CY Chang, YC Lin, HQ Nguyen, ...
Japanese Journal of Applied Physics 49 (11R), 111201, 2010
41 2010 Electrical Characterization of HD Trinh, G Brammertz, EY Chang, CI Kuo, CY Lu, YC Lin, HQ Nguyen, ...
IEEE Electron Device Letters 32 (6), 752-754, 2011
38 2011 High K scheme to improve retention performance of resistive random access memory (RRAM) TH Dang, HL Lin, CW Liang, CY Tsai, CS Tsai
US Patent 10,193,065, 2019
31 2019 Resistive random access memory (RRAM) structure HD Trinh, CS Tsai, CW Liang, CY Tsai, HL Lin, Y Chin-Chieh, WT Chu
US Patent 9,647,207, 2017
30 2017 Effect of postdeposition annealing temperatures on electrical characteristics of molecular-beam-deposited HfO2 on n-InAs/InGaAs metal–oxide–semiconductor capacitors HD Trinh, YC Lin, HC Wang, CH Chang, K Kakushima, H Iwai, ...
Applied Physics Express 5 (2), 021104, 2012
29 2012 Resistive ram structure and method of fabrication thereof HD Trinh, CY Tsai, HL Lin
US Patent 9,978,938, 2018
26 2018 Band alignment parameters of Al2O3/InSb metal–oxide–semiconductor structure and their modification with oxide deposition temperatures HD Trinh, MT Nguyen, YC Lin, Q Van Duong, HQ Nguyen, EY Chang
Applied Physics Express 6 (6), 061202, 2013
25 2013 Electrical Characteristics of HD Trinh, YC Lin, EY Chang, CT Lee, SY Wang, HQ Nguyen, YS Chiu, ...
IEEE transactions on electron devices 60 (5), 1555-1560, 2013
19 2013 Cap structure for trench capacitors YW Chang, HD Trinh
US Patent 11,088,239, 2021
18 2021 Electrical Characterization and Materials Stability Analysis of YC Lin, HD Trinh, TW Chuang, H Iwai, K Kakushima, P Ahmet, CH Lin, ...
IEEE electron device letters 34 (10), 1229-1231, 2013
17 2013 Threading dislocation blocking in metamorphic InGaAs/GaAs for growing high-quality In0. 5Ga0. 5As and In0. 3Ga0. 7As on GaAs substrate by using metal organic chemical vapor … HQ Nguyen, EY Chang, HW Yu, HD Trinh, CF Dee, YY Wong, CH Hsu, ...
Applied Physics Express 5 (5), 055503, 2012
16 2012 Switching layer scheme to enhance RRAM performance HD Trinh, CY Tsai, HL Lin, WT Chu
US Patent 10,164,182, 2018
15 2018 Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density HD Trinh, YC Lin, MT Nguyen, HQ Nguyen, QV Duong, QH Luc, SY Wang, ...
Applied Physics Letters 103 (14), 2013
14 2013 Resistive random access memory (RRAM) cell with a composite capping layer HD Trinh, CY Tsai, HL Lin
US Patent 9,627,613, 2017
13 2017 